FGAF40S65AQ

Field Stop Trench IGBT 650 V, 40 A FGAF40S65AQ Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. Features • • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance Fast Switching Tighten Parameter Distribution IGBT with Monolithic Reverse Conducting Diode This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 650 V 40 A C G E Applications • PFC, Welder TO−3PF CASE 340AH ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 May, 2021 − Rev. 3 1 Publication Order Number: FGAF40S65AQ/D FGAF40S65AQ PACKAGE MARKING AND ORDERING INFORMATION Part Number Device Marking Package Reel Size Tape Width Quantity per Tube FGAF40S65AQ FGAF40S65AQ TO−3PF − − 30 Table 1. ABSOLUTE MAXIMUM RATINGS Symbol Description FGAF40S65AQ Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V @ TC = 25°C 80 A @ TC = 100°C 40 @ TC = 25°C 160 A IC Collector Current ILM (Note 1) Pulsed Collector Current ICM (Note 2) Pulsed Collector Current IF 160 A @ TC = 25°C 40 A @ TC = 100°C 20 A 160 A @ TC = 25°C 94 W @ TC = 100°C 47 W Operating Junction Temperature Range −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C Diode Forward Current IFM (Note 2) PD Pulsed Diode Maximum Forward Current Maximum Power Dissipation TJ TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 sec Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 7 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. Table 2. THERMAL CHARACTERISTICS Symbol RqJC (IGBT) RqJA Parameter FGAF40S65AQ Unit Thermal Resistance, Junction to Case, Max. 1.6 _C/W Thermal Resistance, Junction to Ambient, Max. 40 _C/W www.onsemi.com 2 FGAF40S65AQ Table 3. ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGE = 0 V, IC = 1 mA 650 − − V VGE = 0 V, IC = 1 mA − 0.5 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 40 mA, VCE = VGE 2.6 5.3 6.6 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V − 1.6 2.1 V IC = 40 A, VGE = 15 V, TC = 175°C − 1.9 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 2590 − pF − 35 − pF − 10 − pF − 17.8 − ns − 6.3 − ns Turn−Off Delay Time − 81.6 − ns Fall Time − 9.3 − ns Eon Turn−On Switching Loss − 132 − mJ Eoff Turn−Off Switching Loss − 62 − mJ Ets Total Switching Loss − 194 − mJ Td(on) Turn−On Delay Time − 19.5 − ns − 9.6 − ns Turn−Off Delay Time − 76.8 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Td(off) Tf Turn−On Delay Time Rise Time Rise Time VCC = 400 V, IC = 10 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 25°C VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 25°C Fall Time − 7.4 − ns Eon Turn−On Switching Loss − 296 − mJ Eoff Turn−Off Switching Loss − 111 − mJ Ets Total Switching Loss − 407 − mJ Td(on) Turn−On Delay Time − 17.5 − ns − 6.8 − ns Tr Td(off) Rise Time VCC = 400 V, IC = 10 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 175°C Turn−Off Delay Time − 88 − ns Fall Time − 9.7 − ns Eon Turn−On Switching Loss − 285 − mJ Eoff Turn−Off Switching Loss − 106 − mJ Ets Total Switching Loss − 391 − mJ Tf www.onsemi.com 3 FGAF40S65AQ Table 3. ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit − 19.1 − ns − 11.2 − ns Turn−Off Delay Time − 81.6 − ns Fall Time − 9.2 − ns Eon Turn−On Switching Loss − 552 − mJ Eoff Turn−Off Switching Loss − 186 − mJ Ets Total Switching Loss − 738 − mJ Qg Total Gate Charge − 75 − nC Qge Gate to Emitter Charge − 15 − nC Qgc Gate to Collector Charge − 18 − nC SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Turn−On Delay Time Rise Time VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 175°C VCE = 400 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Parameter Diode Forward Voltage Reverse Recovery Energy Trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Test Conditions IF = 20 A IF = 20 A, dIF/dt = 200 A/ms www.onsemi.com 4 Min Typ Max Unit TC = 25°C − 1.2 1.6 V TC = 175°C − 1.16 − TC = 175°C − 325 − mJ TC = 25°C − 274 − ns TC = 175°C − 362 − TC = 25°C − 1596 − TC = 175°C − 2651 − nC FGAF40S65AQ TYPICAL CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGAF40S65AQ TYPICAL CHARACTERISTICS (Continued) Figure 8. Gate Charge Characteristics Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current m Figure 7. Capacitance Characteristics www.onsemi.com 6 FGAF40S65AQ m TYPICAL CHARACTERISTICS (Continued) Figure 13. Turn−off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 7 FGAF40S65AQ TYPICAL CHARACTERISTICS (Continued) Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21. Transient Thermal Impedance of IGBT www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3PF−3L CASE 340AH ISSUE A DATE 09 JAN 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES). 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA­ SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20. SEATING PLANE P E A A1 Q H1 D D2 L2 D3 L1 NOTE 3 L 1 3X 2 3 b2 3X b b3 DESCRIPTION: MILLIMETERS MIN MAX 5.30 5.70 2.80 3.20 3.10 3.50 1.80 2.20 0.65 0.95 1.90 2.15 3.80 4.20 0.80 1.10 24.30 24.70 24.70 25.30 3.30 3.70 15.30 15.70 5.35 5.55 9.80 10.20 19.10 19.50 4.80 5.20 1.90 2.20 3.40 3.80 4.30 4.70 c A3 A2 e DOCUMENT NUMBER: DIM A A1 A2 A3 b b2 b3 c D D2 D3 E e H1 L L1 L2 P Q 98AON79755E TO−3PF−3L Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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