FGB20N60SFD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications • High Current Capability • Solar Inverter, UPS, Welder, PFC • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A General Description • High Input Impedance • Fast Switching : EOFF = 8 uJ/A Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • RoHS Compliant C COLLECTOR (FLANGE) G TO-263AB/D2-PAK G C E E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM(1) PD Description Ratings Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 V Collector Current @ TC = 25oC 40 A Collector Current o 20 A Pulsed Collector Current @ TC = 25 C 60 A Diode Forward Current @ TC = 25oC 20 A Diode Forward Current o 10 A 60 A W @ TC = 100 C o @ TC = 100 C Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 208 Maximum Power Dissipation @ TC = 100oC 83 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C oC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 1 www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT March 2015 Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case - 0.6 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 2.6 o RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 40 oC/W C/W Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) Package Marking and Ordering Information Part Number FGB20N60SFD Top Mark Package Packing Method FGB20N60SFD 2 D -PAK Parameter Tape Width Quantity 13” Dia N/A 800 Reel Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES / ΔTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE VGE = 0 V, IC = 250 μA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.0 6.5 V IC = 20 A, VGE = 15 V - 2.2 2.8 V IC = 20 A, VGE = 15 V, TC = 125oC - 2.4 - V - 940 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz - 110 - pF - 40 - pF - 13 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 16 - ns td(off) Turn-Off Delay Time - 90 - ns tf Fall Time - 24 48 ns Eon Turn-On Switching Loss - 0.37 - mJ Eoff Turn-Off Switching Loss - 0.16 - mJ Ets Total Switching Loss - 0.53 - mJ td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 16 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC 2 - 95 - ns - 28 - ns - 0.4 - mJ - 0.28 - mJ - 0.69 - mJ www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 20 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 10 A Diode Reverse Recovery Charge ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 65 - nC 7 - nC - 33 - nC TC = 25°C unless otherwise noted IF =10 A, diF/dt = 200 A/μs Qrr - Min. Typ. Max TC = 25oC - 1.9 2.5 TC = 125oC - 1.7 - TC = 25oC - 34 - - 57 - TC = 25oC - 41 - o - 96 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 60 o TC = 25 C 20V 15V Collector Current, IC [A] Figure 2. Typical Output Characteristics 10V 20 VGE = 8V 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 10V VGE = 8V 20 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 60 60 Common Emitter VCE = 20V Common Emitter VGE = 15V o TC = 25 C o TC = 125 C 40 TC = 25 C Collector Current, IC [A] o Collector Current, IC [A] 12V 40 6.0 Figure 3. Typical Saturation Voltage Characteristics 20 o TC = 125 C 40 20 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 4 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 4 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20V 15V 40 0 0.0 o TC = 125 C 12V Collector Current, IC [A] 60 40A 3 20A 2 IC = 10A Common Emitter o TC = -40 C 16 12 8 40A 4 20A IC = 10A 1 25 0 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 16 12 8 40A 4 20A IC = 10A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 20A 40A 4 IC = 10A 0 20 0 Figure 9. Capacitance Characteristics 20 Figure 10. Gate charge Characteristics 15 2500 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o 2000 Capacitance [pF] 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 25 C Cies 1500 1000 Coes 500 Cres 0 0.1 TC = 25 C 12 300V VCC = 100V 200V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100μs 10 Switching Time [ns] Collector Current, Ic [A] 10μs 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C tr td(on) 10 o TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 125 C 5 1000 0 5 10 20 30 40 Gate Resistance, RG [Ω] 50 60 www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V IC = 20A 100 o TC = 25 C o TC = 25 C td(off) o TC = 125 C TC = 125 C Switching Time [ns] Switching Time [ns] o 100 tf tr td(on) 10 3 10 0 10 20 30 40 50 0 60 10 Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current 30 40 Figure 16. Switching Loss vs. Gate Resistance 3 300 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω o IC = 20A TC = 25 C o o Switching Loss [mJ] TC = 125 C Switching Time [ns] 20 Collector Current, IC [A] td(off) 100 TC = 25 C 1 o TC = 125 C Eon Eoff tf 0.1 10 0 10 20 30 40 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 18. Turn off Switching SOA Characteristics 80 10 Common Emitter VGE = 15V, RG = 10Ω o o TC = 125 C Collector Current, IC [A] Switching Loss [mJ] TC = 25 C Eon 1 Eoff 0.1 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 0.02 0 10 20 30 1 40 ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 100 40 o TJ = 125 C Reverse Current , IR [μA] Forward Current, IF [A] o TJ = 25 C 1 TC = 125 C 1 o TC = 75 C 0.1 o TC = 25 C 0.01 1E-3 0.1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 60 Stored Recovery Charge, Qrr [nC] o 10 o TJ = 75 C 10 50 200A/μs 40 30 di/dt = 100A/μs 20 10 50 di/dt = 100A/μs 40 200A/μs 30 20 10 0 5 10 15 20 0 5 Forward Current, IF [A] 10 15 20 Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 single pulse 0.01 -5 10 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 7 www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics FGB20N60SFD — 600 V, 20 A Field Stop IGBT Mechanical Dimensions Figure 24. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ UHC® SPM® STEALTH™ Ultra FRFET™ SuperFET® UniFET™ SuperSOT™-3 VCX™ SuperSOT™-6 VisualMax™ SuperSOT™-8 VoltagePlus™ ® SupreMOS XS™ SyncFET™ Xsens™ Sync-Lock™ ☇ॎ ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I73 ©2011 Fairchild Semiconductor Corporation FGB20N60SFD Rev. 1.6 9 www.fairchildsemi.com FGB20N60SFD — 600 V, 20 A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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