FGB3245G2-F085

EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT Features General Description „ SCIS Energy = 320mJ at TJ = 25oC The FGB3245G2-F085 and FGD3245G2 are N-channel IGBTs designed in ON Semiconductor's EcoSPARK-2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out-standing Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An inte-grated zener-circuitry clamps the IGBT's collecter- to-emit-ter voltage at 450V which enables systems requiring a higher spark voltage „ Logic Level Gate Drive „ Low Saturation Voltage „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications Package Symbol JEDEC TO-263AB D²-Pak COLLECTOR G COLLECTOR (FLANGE) E R1 GATE R2 JEDEC TO-252AA D-Pak G EMITTER COLLECTOR (FLANGE) E @2014 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: FGD3245G2-F085/D FGD3245G2-F085 / FGB3245G2-F085 FGD3245G2-F085 / FGB3245G2-F085 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Rating 450 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 320 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 23 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 23 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 150 W 1.1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV CDM-Electrostatic Discharge Voltage at 1Ω 2 kV Package Marking and Ordering Information Device Marking FGD3245G2 Device FGD3245G2-F085 Package TO252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units FGB3245G2 FGB3245G2-F085 TO263AB 330mm 24mm 800 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 420 - 480 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 440 - 500 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCE = 250V, RGE = 1KΩ - - 25 μA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, - - 1 - - 40 R1 Series Gate Resistance - 120 - Ω R2 Gate to Emitter Resistance 10K - 30K Ω ICER TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, www.onsemi.com 2 TJ = 25oC TJ = 150oC TJ = 150oC - 1.13 1.25 V - 1.32 1.50 V - 1.64 1.85 V FGD3245G2-F085 / FGB3245G2-F085 Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ - 23 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V - nC 1.3 1.6 2.2 0.75 1.1 1.8 VCE = 12V, ICE = 10A - 2.7 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 0.9 4 μs - 2.6 7 μs - 5.4 15 μs - 2.7 15 μs - - 320 mJ - - 0.9 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25oC TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL ESCIS Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, L = 3.0 mHy,RG = 1KΩ, Self Clamped Inductive Switching VGE = 5V, (Note 1) TJ = 25°C Thermal Characteristics RθJC Thermal Resistance Junction to Case All packages o C/W Notes: 1: Self Clamping Inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that starting Tj=25oC; L=3mHy, ISCIS=14.6A,VCC=100V during inductor charging and VCC=0V during the time in clamp. 2: Self Clamping Inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that starting Tj=150oC; L=3mHy, ISCIS=10.9A,VCC=100V during inductor charging and VCC=0V during the time in clamp. www.onsemi.com 3 FGD3245G2-F085 / FGB3245G2-F085 Electrical Characteristics TA = 25°C unless otherwise noted o TJ = 150 C 10 1 SCIS Curves valid for Vclamp Voltages of