FGB40N60SM
600 V, 40 A Field Stop IGBT
Features
General Description
• Maximum Junction Temperature : TJ
=175oC
Using novel field stop IGBT technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum
performance for welder and PFC applications where low
conduction and switching losses are essential.
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
• IR Reflow Only
Applications
• Welder, PFC
C
C
COLLECTOR
(FLANGE)
G
TO-263AB/D2-PAK
G
E
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
Description
Ratings
Unit
Collector to Emitter Voltage
600
V
Gate to Emitter Voltage
± 20
V
Transient Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
Pulsed Collector Current
o
± 30
V
80
A
40
A
120
A
Maximum Power Dissipation
@ TC = 25 C
349
W
Maximum Power Dissipation
@ TC = 100oC
174
W
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
1
www.fairchildsemi.com
FGB40N60SM — 600 V, 40 A Field Stop IGBT
September 2013
Symbol
Parameter
Typ.
Max.
Unit
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
oC/W
RθJA
Thermal Resistance, Junction to Ambient
-
62.5
o
C/W
Package Marking and Ordering Information
Device Marking
FGB40N60SM
Device
FGB40N60SM
Package
Tape Width
Quantity
-
-
50
TO-263AB(D -PAK)
Electrical Characteristics of the IGBT
Symbol
Reel Size
2
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
3.5
4.5
6.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250μA, VCE = VGE
IC = 40A, VGE = 15V
-
1.9
2.3
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40A, VGE = 15V,
TC = 175oC
-
2.1
-
V
-
1880
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
180
-
pF
-
50
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
12
16
ns
tr
Rise Time
-
20
28
ns
td(off)
Turn-Off Delay Time
-
92
120
ns
tf
Fall Time
-
13
17
ns
Eon
Turn-On Switching Loss
-
0.87
1.30
mJ
Eoff
Turn-Off Switching Loss
-
0.26
0.34
mJ
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
1.13
1.64
mJ
td(on)
Turn-On Delay Time
-
15
-
ns
tr
Rise Time
-
22
-
ns
td(off)
Turn-Off Delay Time
-
116
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.60
-
mJ
Ets
Total Switching Loss
-
1.57
-
mJ
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 175oC
2
-
16
-
ns
-
0.97
-
mJ
www.fairchildsemi.com
FGB40N60SM — 600 V, 40 A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
VCE = 400V, IC = 40A,
VGE = 15V
3
Min.
Typ.
Max
Unit
-
119
180
nC
-
13
20
nC
-
58
90
nC
www.fairchildsemi.com
FGB40N60SM — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
120
o
TC = 25 C
20V
15V
120
TC = 175 C
Collector Current, IC [A]
80
60
VGE = 8V
60
20
0
0
2
4
Collector-Emitter Voltage, VCE [V]
0
6
Figure 3. Typical Saturation Voltage
Characteristics
2
4
Collector-Emitter Voltage, VCE [V]
6
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
120
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
100
Collector Current, IC [A]
VGE = 8V
40
0
o
TC = 25 C
o
TC = 175 C
80
60
40
20
0
1
2
3
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
80A
2.5
2.0
40A
1.5
IC = 20A
1.0
25
0
4
Figure 5. Saturation Voltage vs. VGE
50
75
100
125
150
o
Case Temperature, TC [ C]
175
Figure 6. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
10V
80
20
16
12
8
40A
80A
4
IC = 20A
0
12V
100
10V
40
20V
15V
o
12V
100
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
o
TC = 175 C
16
12
8
80A
4
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
4
20
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGB40N60SM — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
15
4000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
Capacitance [pF]
3000
Cies
2000
1000
Coes
TC = 25 C
400V
12
VCC = 200V
300V
9
6
3
Cres
0
0.1
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
40
80
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
tr
td(off)
Switching Time [ns]
Switching Time [ns]
120
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
10
o
TC = 25 C
o
TC = 25 C
o
TC = 175 C
o
TC = 175 C
1
1
0
10
20
30
40
Gate Resistance, RG [Ω]
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
1000
5
Common Emitter
VGE = 15V, RG = 6Ω
o
Switching Time [ns]
Switching Loss [mJ]
TC = 25 C
Eon
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
100
TC = 175 C
tr
10
td(on)
o
TC = 25 C
o
TC = 175 C
0.1
0
10
20
30
40
Gate Resistance, RG [Ω]
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
1
20
50
30
40
50
60
70
80
Collector Current, IC [A]
5
www.fairchildsemi.com
FGB40N60SM — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
6
1000
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 6Ω
Eon
1
Eoff
Common Emitter
VGE = 15V, RG = 6Ω
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
TC = 175 C
1
20
30
40
50
60
70
0.1
20
80
30
Collector Current, IC [A]
Figure 15. Load Current Vs. Frequency
50
60
70
80
Figure 16. SOA Characteristics
300
100
Vcc = 600 V
Load Current
: peak of square wave
Duty cycle : 50%
80
100μs
o
70
Tc = 100 C
Power Dissipation
: 174W
60
50
o
Tc = 100 C
40
10μs
100
Collector Current, Ic [A]
90
Collector Current, IC [A]
40
Collector Current, IC [A]
30
20
1ms
10 ms
10
DC
1
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
10
0.01
0
1k
10k
100k
Switching Frequency, f [Hz]
1
1M
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 17. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
0
10
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
6
www.fairchildsemi.com
FGB40N60SM — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
FGB40N60SM — 600 V, 40 A Field Stop IGBT
Mechanical Dimensions
Figure 18. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
7
www.fairchildsemi.com
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First Production
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I68
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