FGB7N60UNDF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGB7N60UNDF 600 V, 7 A Short Circuit Rated IGBT Features Applications • Short Circuit Rated 10 us • Sewing Machine, CNC, Home Appliances, Motor Control • High Current Capability General Description • High Input Impedance • Fast Switching Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances. • RoHS Compliant C COLLECTOR (FLANGE) G C E G TO-263AB/D2-PAK E Absolute Maximum Ratings Ratings Unit VCES Symbol Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF PD Description o Collector Current @ TC = 25 C 14 A Collector Current @ TC = 100oC 7 A Pulsed Collector Current @ TC = 25oC 21 A 25oC Diode Forward Current @ TC = 7 A Diode Forward Current @ TC = 100oC 3.5 A Maximum Power Dissipation @ TC = 25oC 83 W Maximum Power Dissipation @ TC = 100oC 33 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case 1.5 o RθJC(Diode) Thermal Resistance, Junction to Case 3.5 oC/W RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 40 o C/W C/W Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 1 www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT September 2013 Device Marking FGB7N60UNDF Device Package FGB7N60UNDF TO-263AB(D2-PAK) Electrical Characteristics of the IGBT Symbol Parameter Rel Size Tape Width Quantity - 50 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 5.5 6.8 8.5 V IC = 7A, VGE = 15V IC = 7mA, VCE = VGE - 1.9 2.3 V IC = 7A, VGE = 15V, TC = 125oC - 2.1 - V - 275 pF VCE = 30V, VGE = 0V, f = 1MHz - 41 pF - 10 pF - 5.9 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 4.2 ns td(off) Turn-Off Delay Time - 32.3 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400V, IC = 7A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC - 68 - 99 uJ Turn-Off Switching Loss - 104 uJ Total Switching Loss - 203 uJ td(on) Turn-On Delay Time - 6 ns tr Rise Time - 4.3 ns td(off) Turn-Off Delay Time - 33.8 ns tf Fall Time - 113 ns Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Tsc Short Circuit Withstand Time ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 VCC = 400V, IC = 7A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 89 ns - 181 uJ - 144 uJ - 325 uJ 10 us www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Package Marking and Ordering Information Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 7A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 7A Diode Reverse Recovery Charge ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 18 - nC 3 - nC - 13 - nC TC = 25°C unless otherwise noted IF =7A, dIF/dt = 200A/μs Qrr - Min. Typ. Max TC = 25oC - 1.7 2.2 TC = 125oC - 1.6 TC = 25oC - 32.3 - 70 TC = 25oC - 59 o - 172 TC = 125oC TC = 125 C 3 Unit V ns nC - www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 30 o TC = 25 C 20V 15V VGE = 12V 10 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] VGE = 12V 20 10 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 9.0 Figure 4. Transfer Characteristics 30 30 Common Emitter VCE = 20V Common Emitter VGE = 15V 25 o TC = 25 C o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 17V 20V 15V 20 0 0.0 o TC = 125 C 17V Collector Current, IC [A] 30 Collector Current, IC [A] Figure 2. Typical Output Characteristics o TC = 125 C 20 15 10 o TC = 125 C 20 10 5 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 14A 2.5 7A 2.0 1.5 1.0 25 IC = 3.5A 50 75 100 o Case Temperature, TC [ C] ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 15 Figure 6. Saturation Voltage vs. VGE 3.5 3.0 3 6 9 12 Gate-Emitter Voltage,VGE [V] o TC = 25 C 16 12 8 7A 4 4 14A IC = 3.5A 0 125 Common Emitter 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 1000 20 Common Emitter o TC = 25 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] Figure 8. Capacitance Characteristics 12 8 Coes 100 7A Common Emitter VGE = 0V, f = 1MHz 14A 4 IC = 3.5A 0 4 o TC = 25 C 8 12 16 Gate-Emitter Voltage, VGE [V] 10 20 1 Figure 9. Gate charge Characteristics 30 30 200V 10 12 Collector Current, Ic [A] 400V VCC = 100V 9 6 3 10μs 100μs 1 1ms 10 ms DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 Common Emitter o TC = 25 C 0.01 0 0 5 10 15 Gate Charge, Qg [nC] 1 20 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 300 10 Switching Time [ns] 100 Switching Time [ns] 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] Cres td(on) Common Emitter VCC = 400V, VGE = 15V IC = 7A tr 1 tf 100 td(off) Common Emitter VCC = 400V, VGE = 15V IC = 7A o TC = 25 C o TC = 25 C o TC = 125 C o TC = 125 C 10 0.1 0 10 20 30 40 Gate Resistance, RG [Ω] ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 50 0 60 10 20 30 40 50 60 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 500 30 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C 10 o tr 1 TC = 125 C Switching Time [ns] Switching Time [ns] td(on) Common Emitter VGE = 15V, RG = 10Ω 100 tf td(off) o TC = 25 C o TC = 125 C 10 0.1 0 2 4 6 8 10 12 0 14 2 4 6 8 10 12 14 16 18 20 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs Collector Current 1000 1000 Common Emitter VCC = 400V, VGE = 15V IC = 7A Eon Switching Loss [uJ] Switching Loss [uJ] o TC = 25 C o TC = 125 C Eon Eoff 100 Eoff 100 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 125 C 10 50 0 10 20 30 40 Gate Resistance, RG [Ω] 50 0 60 Figure 17. Turn off Switching SOA Characteristics 10 15 20 Figure 18. Forward Characteristics 30 Forward Current, IF [A] 30 Collector Current, IC [A] 5 Collector Current, IC [A] 10 10 o o TJ = 75 C TJ = 125 C o TJ = 25 C 1 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 0.2 1000 0 Collector-Emitter Voltage, VCE [V] ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 6 1 2 Forward Voltage, VF [V] 3 www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Typical Performance Characteristics Figure 19. Reverse Current Figure 20. Stored Charge 100 0.20 o Reverse Current , IR [μA] 10 Stored Recovery charge, Qrr [nC] TC = 25 C o TJ = 125 C 1 o TJ = 75 C 0.1 0.01 o TJ = 25 C 1E-3 1E-4 50 200 400 Reverse Voltage, VR [V] 200A/μs o TC = 125 C 0.15 diF/dt = 100A/μs 0.10 200A/μs 0.05 diF/dt = 100A/μs 0.00 600 0 2 4 6 8 Forward Current, IF [A] Figure 21. Reverse Recovery Time Reverse Recovery Time, trr [nS] 100 diF/dt = 100A/μs 200A/μs 50 diF/dt = 100A/μs 200A/μs o TC = 25 C o TC = 125 C 0 0 2 4 6 8 10 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 0.00001 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 7 www.fairchildsemi.com FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Typical Performance Characteristics FGB7N60UNDF — 600 V, 7 A Short Circuit Rated IGBT Mechanical Dimensions Figure 23. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. C1 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FGB7N60UNDF Rev. 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