FGD3050G2

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGD3050G2 EcoSPARKTM 2 300mJ, 500V, N-Channel Ignition IGBT Features Applications  SCIS Energy = 300mJ at TJ = 25°C  Automotive Ignition Coil Driver Circuits  Logic Level Gate Drive  Coil On Plug Applications  RoHS Compliant Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 500 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 20 V ESCIS25 ISCIS = 14.2A, L = 3.0mHy, RGE = 1K TC = 25°C 300 mJ TC = 150°C 180 mJ ESCIS150 ISCIS = 11.0A, L = 3.0mHy, RGE = 1K IC25 Collector Current Continuous, at TC = 25°C, VGE = 5.0V 32 A IC110 Collector Current Continuous, at TC = 110°C, VGE = 5.0V 27 A VGEM Gate to Emitter Voltage Continuous PD Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C ±10 V 150 W 1.1 W/oC TJ Operating Junction Temperature Range -40 to +175 oC TSTG Storage Junction Temperature Range -40 to +175 oC TL Max Lead Temp for soldering (Leads at 1.6mm from case for 10s) 300 oC TPKG Max Lead Temp for soldering (Package Body for 10s) 260 oC ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV Semiconductor Components Industries, LLC, 2017 May, 2017, Rev. 1.0 1 Publication Order Number: FGD3050G2 FGD3050G2 EcoSPARKTM 2 300mJ, 500V, N-Channel Ignition IGBT www.onsemi.com RJC Thermal Resistance Junction to Case o 0.9 C/W Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVCER VGE = 0V,ICE = 2mA, Collector to Emitter Breakdown Voltage RGE = 1K, TJ = -40 to 150oC 470 - 530 V BVCES VGE = 0V, ICE = 10mA, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 495 - 555 V BVECS Emitter to Collector Breakdown Voltage VGE = 0V, ICE = -75mA, TJ = 25°C 20 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±5mA ±12 ±14 - V - - 25 A - - 1 mA - - 1 - - 40 - 111 -  10K - 30K  ICER Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance VCE = 250V, RGE = 1KΩ TJ = 25oC TJ = 150oC TJ = 25oC VEC = 15V TJ = 150oC mA On Characteristics VCE(SAT) Collector to Emitter Saturation Voltage VGE = 4V, ICE = 6A VCE(SAT) Collector to Emitter Saturation Voltage VGE = 4.5V, ICE = 10A VCE(SAT) Collector to Emitter Saturation Voltage VGE = 4.5V, ICE = 15A TJ = 25oC TJ = 150oC TJ = 150oC - 1.1 1.2 V - 1.3 1.45 V - 1.6 1.75 V nC Dynamic Characteristics QG(ON) Gate Charge VGE = 5V, VCE = 12V, ICE = 10A TJ = 25oC - 22 - 1.3 1.6 2.2 0.75 1.1 1.8 2.7 - V s VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 10A - Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 VGE = 5V, RG = 1K Current Rise Time-Resistive - 0.9 4 - 1.6 7 s - 5.4 15 s - 1.4 15 s TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH, VGE = 5V, RG = 1K Current Fall Time-Inductive Ordering Information Device Marking FGD3050G2 Device FGD3050G2_F085 Package TO-252AA Reel Size 330mm www.onsemi.com 2 Tape Width 16mm Quantity 2500units FGD3050G2 EcoSPARKTM 2 300mJ, 500V, N-Channel Ignition IGBT Thermal Characteristics ISCIS, INDUCTIVE SWITCHING CURRENT (A) SCIS Curves valid for Vclamp Voltages of