FGD3440G2-F085

FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT Features Applications o „ SCIS Energy = 335mJ at TJ = 25 C „ Automotive lgnition Coil Driver Circuits „ Logic Level Gate Drive „ Coil On Plug Applications „ Qualified to AEC Q101 „ RoHS Compliant Package Symbol JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 GATE JEDEC TO-252AA D-Pak R2 G E EMITTER COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Parameter Symbol BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 400 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ 195 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 26.9 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 25 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 166 W 1.1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500Ω @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 4 1 kV www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 May 2014 Device Marking Device Package FGB3440G2 FGB3440G2_F085 FGD3440G2 FGD3440G2_F085 TO-263AB TO-252AA FGP3440G2 FGP3440G2_F085 TO-220AB Reel Size 330mm Tape Width 24mm 800 330mm 16mm N/A 2500 50 Tube Quantity Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 370 400 430 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCE = 250V, RGE=1KΩ - - 25 μA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, - - 1 - - 40 R1 Series Gate Resistance R2 Gate to Emitter Resistance ICER TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA - 120 - Ω 10K - 30K Ω - 1.1 1.2 V - 1.3 1.45 V - 1.6 1.75 V - - 335 mJ On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy, VGE = 5V Self Clamped Inductive Switching ESCIS RG = 1KΩ, (Note 1) TJ = 25oC TJ = 150oC TJ = 150oC o TJ = 25 C Notes: 1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting TJ=25 oC; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp . 2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting TJ=150 oC; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp. @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 2 www.fairchildsemi.com FFGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Package Marking and Ordering Information Symbol Parameter Test Conditions Min Typ - 24 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V o nC 1.3 1.7 2.2 0.75 1.2 1.8 VCE = 12V, ICE = 10A - 2.8 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 1.0 4 μs - 2.0 7 μs - 5.3 15 μs - 2.3 15 μs - - 0.9 oC/W VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25 C - TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE =6.5A, TJ = 25oC, Thermal Characteristics RθJC Thermal Resistance Junction to Case @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 3 www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 100 RG = 1KΩ, VGE = 5V, VCE = 100V o TJ = 25 C 10 o TJ = 150 C 1 10 SCIS Curves valid for Vclamp Voltages of