FGD3440G2-F085V

EcoSPARK 2 N-Channel Ignition IGBT 335 mJ, 400 V FGD3440G2-F085V Features • • • • SCIS Energy = 335 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com COLLECTOR Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application GATE R1 R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ 4 IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C 26.9 A IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C 25 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total, TC = 25°C 166 W Power Dissipation Derating, TC > 25°C 1.1 W/°C Operating Junction and Storage Temperature −40 to +175 °C TSTG Storage Junction Temperature Range −40 to +175 °C TL Max. Lead Temperature for Soldering (Leads at 1.6 mm from case for 10 s) 300 °C TPKG Max. Lead Temperature for Soldering (Package Body for 10 s) 260 °C ESD HBM−Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV TJ EMITTER 1 2 3 DPAK (SINGLE GAUGE) CASE 369C MARKING DIAGRAM AYWW FGD 3440G2 A = Assembly Location Y = Year WW = Work Week FGD3440G2= Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 335 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 15 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 195 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 11.4 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. © Semiconductor Components Industries, LLC, 2019 October, 2020 − Rev. 3 1 Publication Order Number: FGD3440G2−F085V/D FGD3440G2−F085V THERMAL RESISTANCE RATINGS Characteristic Junction−to−Case – Steady State (Drain) Symbol Max Units RqJC 0.9 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage ICE = 2 mA, VGE = 0 V, RGE = 1 kW, TJ = −40 to 150°C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = −20 mA, VGE = 0 V, TJ = 25°C 28 − − V BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 − V ICER Collector to Emitter Leakage Current VCE = 250 V RGE = 1 kW TJ = 25°C − − 25 mA TJ = 150°C − − 1 mA VEC = 24 V TJ = 25°C − − 1 mA TJ = 150°C − − 40 − 120 − W 10K − 30K W ICE = 6 A, VGE = 4 V, TJ = 25°C − 1.1 1.2 V ICE = 10 A, VGE = 4.5 V, TJ = 150°C − 1.3 1.45 ICE = 15 A, VGE = 4.5 V, TJ = 150°C − 1.6 1.75 − 24 − nC TJ = 25°C 1.3 1.7 2.2 V TJ = 150°C 0.75 1.2 1.8 VCE = 12 V, ICE = 10 A − 2.8 − V VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 1 KW, TJ = 25°C − 1.0 4 ms − 2.0 7 VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 1KW, ICE = 6.5 A, TJ = 25°C − 5.3 10 − 2.3 15 IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ON CHARACTERISTICS (Note 5) VCE(SAT) Collector to Emitter Saturation Voltage DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA VCE = VGE VGEP Gate to Emitter Plateau Voltage SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Diameter Tape Width Qty† FGD3440G2 FGD3440G2−F085V DPAK (Pb−Free) 330 mm 16 mm 2500 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FGD3440G2−F085V TYPICAL CHARACTERISTICS Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp Figure 2. Self Clamped Inductive Switching Current vs. Inductance Figure 4. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 3. Collector to Emitter On−State Voltage vs. Junction Temperature Figure 5. Collector to Emitter On−State Voltage vs. Collector Current Figure 6. Collector to Emitter On−State Voltage vs. Collector Current www.onsemi.com 3 FGD3440G2−F085V TYPICAL CHARACTERISTICS (continued) Figure 7. Collector to Emitter On−State Voltage vs. Collector Current I CE , DC COLLECTOR CURRENT (A) 50 Figure 8. Transfer Characteristics VGE = 5V 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE(oC) Figure 9. DC Collector Current vs. Case Temperature Figure 10. Gate Charge Figure 11. Threshold Voltage vs. Junction Temperature Figure 12. Leakage Current vs. Junction Temperature www.onsemi.com 4 FGD3440G2−F085V TYPICAL CHARACTERISTICS (continued) Figure 13. Switching Time vs. Junction Temperature Figure 14. Capacitance vs. Collector to Emitter Figure 15. Break Down Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 FGD3440G2−F085V TEST CIRCUIT AND WAVEFORMS Figure 18. tON and tOFF Switching Test Circuit Figure 17. Inductive Switching Test Circuit Figure 19. Energy Test Circuit Figure 20. Energy Waveforms ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 B c2 4 L3 Z D 1 L4 C A 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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