FGD3N60UNDF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGD3N60UNDF 600 V, 3 A Short Circuit Rated IGBT Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Features Using advanced NPT IGBT technology, Fairchild®’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential. • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Collector Gate C G JEDEC TO-252 D-Pak E Emitter E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF PD o Collector Current @ TC = 25 C 6 A Collector Current @ TC = 100oC 3 A o @ TC = 25 C 9 A Diode Forward Current @ TC = 25oC 3 A Maximum Power Dissipation @ TC = 25oC 60 W Pulsed Collector Current Maximum Power Dissipation @ TC = 100oC 24 Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o -55 to +150 o C C oC 300 Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit oC/W RθJC(IGBT) Thermal Resistance, Junction to Case 2.08 RθJC(Diode) Thermal Resistance, Junction to Case 5.0 o 150 o RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) C/W C/W Notes: 2: Mounted on 1” square PCB (FR4 or G-10 material) ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 1 www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated April 2013 Device Marking Device Package Rel Size Tape Width Quantity FGD3N60UNDF FGD3N60UNDF TO252 330mm 16mm 2500 units Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC - 0.3 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±10 uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE 5.5 6.8 8.5 V IC = 3A, VGE = 15V - 2.0 2.52 V IC = 3A, VGE = 15V, TC = 125oC - 2.4 - V - 165 pF VCE = 30V, VGE = 0V, f = 1MHz - 28 pF - 8.5 pF ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - 5.5 tr Rise Time - 1.8 ns td(off) Turn-Off Delay Time - 22 ns tf Fall Time - 91 ns Eon Turn-On Switching Loss - 52 uJ Eoff Turn-Off Switching Loss - 30 uJ Ets Total Switching Loss - 82 uJ td(on) Turn-On Delay Time - 4.8 ns tr Rise Time - 2.6 ns td(off) Turn-Off Delay Time - 24 ns tf Fall Time - 122 ns Eon Turn-On Switching Loss - 65 uJ Eoff Turn-Off Switching Loss - 44 uJ Ets Total Switching Loss - 109 uJ Tsc Short Circuit Withstand Time ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 VCC = 400V, IC = 3A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 3A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC VCC = 350V, RG = 100Ω, VGE = 15V, TC = 150oC 2 10 us www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Package Marking and Ordering Information Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 3A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 3A Diode Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 1.6 - nC - 6.6 - nC - 11.3 - nC TC = 25°C unless otherwise noted IF =3A, dIF/dt = 200A/µs Qrr - Min. Typ. Max TC = 25oC - 1.7 2.2 TC = 125oC - 1.6 - TC = 25oC - 21 - o TC = 125 C - 31 - TC = 25oC - 23 - - 49 - TC = 3 125oC Unit V ns nC www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics o TC = 25 C 20V Collector Current, IC [A] 25 15V 20 15 VGE = 12V 10 17V 15V 20 15 VGE = 12V 10 5 5 0 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 12 20 Common Emitter VGE = 15V Collector Current, IC [A] TC = 25 C 15 Common Emitter VCE = 20V 10 o Collector Current, IC [A] o TC = 125 C 20V 17V 25 Collector Current, IC [A] Figure 2. Typical Output Characteristics 30 30 o TC = 125 C 10 5 o TC = 25 C o TC = 125 C 8 6 4 2 0 0 0 1 2 3 4 5 6 7 Collector-Emitter Voltage, VCE [V] 5 8 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter VGE = 15V 3.0 6A 2.5 3A 2.0 IC = 1.5A 1.5 1.0 25 FGD3N60UNDF Rev. C1 12 4 Common Emitter o TC = 25 C 16 12 6A 3A 8 IC = 1.5A 4 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2012 Fairchild Semiconductor Corporation 7 8 9 10 11 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.5 6 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 500 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter o TC = 125 C Cies o TC = 25 C 16 12 Capacitance [pF] Collector-Emitter Voltage, VCE [V] Figure 8. Capacitance Characteristics 6A 3A 8 Coes 100 Cres IC = 1.5A 4 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 Figure 9. Gate charge Characteristics 30 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 10 15 10µs Common Emitter TC = 25 C 300V VCC = 100V 12 100µs Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o 200V 9 6 1ms 1 10 ms DC 0.1 *Notes: o 1. TC = 25 C 3 o 2. TJ = 150 C 3. Single Pulse 0.01 0 0 2 4 6 8 Gate Charge, Qg [nC] 10 1 12 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 20 Common Emitter VCC = 400V, VGE = 15V IC = 3A 10 Switching Time [ns] Switching Time [ns] o td(on) tr Common Emitter VCC = 400V, VGE = 15V IC = 3A TC = 25 C o TC = 125 C tf 100 td(off) o TC = 25 C o TC = 125 C 10 1 0 10 20 30 40 Gate Resistance, RG [Ω ] ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 0 50 10 20 30 40 50 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 10 1000 Common Emitter VGE = 15V, RG = 10Ω td(on) o TC = 25 C Switching Time [ns] Switching Time [ns] o TC = 125 C tr 1 Common Emitter VGE = 15V, RG = 10Ω tf 100 td(off) o TC = 25 C o TC = 125 C 0.1 1 2 3 4 5 10 6 1 2 3 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 6 5 6 1000 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω IC = 3A TC = 25 C o o Switching Loss [uJ] TC = 25 C o TC = 125 C 100 Eon o TC = 125 C Eon 100 Eoff Eoff 10 5 Figure 16. Switching Loss vs Collector Current 1000 Switching Loss [uJ] 4 Collector Current, IC [A] 10 0 10 20 30 40 Gate Resistance, RG [Ω] 1 50 Figure 17. Turn off Switching SOA Characteristics 2 3 4 Collector Current, IC [A] Figure 18. Forward Characteristics 12 10 Forward Current, IF [A] Collector Current, IC [A] 80 20 10 o TC = 75 C o TJ = 125 C TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C 10 o 100 1 1000 0 Collector-Emitter Voltage, VCE [V] ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 o TC = 75 C TC = 125 C 1 1 o TC = 25 C o 6 1 2 3 Forward Voltage, VF [V] 4 www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 4 50 o TC = 25 C Stored Recovery Charge, Qrr [nC] Reverse Recovery Current, Irr [A] o o TC = 125 C 3 di/dt = 200A/uS 2 1 0 di/dt =100A/uS 0 1 2 3 4 o TC = 125 C 40 35 30 didt =100A/uS didt = 200A/uS 25 20 15 10 5 0 5 TC = 25 C 45 0 1 Forward Current, IF [A] 2 3 4 5 Forward Current, IF [A] Figure 21. Reverse Recovery Time 50 Reverse Recovery Time, trr [ns] 45 40 35 didt =100A/uS didt = 200A/uS 30 25 20 15 10 o TC = 25 C o 5 0 TC = 125 C 0 1 2 3 4 5 Forward Current, IF [A] Figure 22. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 3 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1E-5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 7 www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Typical Performance Characteristics FGD3N60UNDF 600 V, 3 A Short Circuit Rated Typical Performance Characteristics Figure 23. Transient Thermal Impedance of FRD Thermal Response [Zthjc] 5 0.5 0.2 1 0.1 0.05 PDM 0.02 0.01 0.1 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 8 www.fairchildsemi.com FGD3N60UNDF 600 V, 3 A Short Circuit Rated Mechanical Dimensions D-PAK ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. C1 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FGD3N60UNDF Rev. 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