FGD5T120SH

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGD5T120SH 1200 V, 5 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for inrush current limitation, lighting and home appliance applications. • High Speed Switching • Low Saturation Voltage: VCE(sat) =2.9 V @ IC = 5 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Inrush current limitation • Lighting • Home appliances C G E D-PAK Absolute Maximum Ratings T C Symbol VCES VGES = 25°C unless otherwise noted Description FGD5T120SH Unit Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V 10 A Collector Current @ TC = 25oC Collector Current @ TC = 100oC 5 A ILM (1) Clamped Inductive Load Current @ TC = 25oC 12.5 A ICM (2) Pulsed Collector Current IC PD Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC 12.5 A 69 W 28 W TJ Operating Junction Temperature -55 to +150 o C Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1. Vcc = 600 V,VGE = 15 V, IC = 12.5 A, RG = 50 Ω , Inductive Load 2. Limited by Tjmax ©2015 Fairchild Semiconductor Corporation FGD5T120SH Rev. 1.0 1 www.fairchildsemi.com FGD5T120SH — 1200 V, 5 A FS Trench IGBT November 2015 Symbol Parameter FGD5T120SH Unit RθJC (IGBT) Thermal Resistance, Junction to Case, Max. 1.8 o RθJA Thermal Resistance, Junction to Ambient, Max. (3) 50 oC/W C/W Notes : 3. Mounted on 1” squre PCB (FR4 or G-10 material) Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Qty per Tube FGD5T120SH FGD5T120SH TO-252 A03 380 mm 16 mm 2500 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA ΔBVCES / ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA - 1.2 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ± 400 nA 2.5 3.5 4.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 5 mA, VCE = VGE 2.9 3.6 V Collector to Emitter Saturation Voltage IC = 5 A, VGE = 15 V - VCE(sat) IC = 5 A, VGE = 15 V, TC = 150oC - 4.5 - V - 209 - pF - 11 - pF - 2 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics Td(on) Turn-On Delay Time - 4.8 - ns Tr Rise Time - 20.8 - ns Td(off) Turn-Off Delay Time - 24.8 - ns Tf Fall Time - 104 - ns Eon Turn-On Switching Loss - 247 - uJ Eoff Turn-Off Switching Loss - 94 - uJ VCC = 600 V, IC = 5 A, RG = 30 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 341 - uJ Td(on) Turn-On Delay Time - 4.8 - ns Tr Rise Time - 40 - ns Td(off) Turn-Off Delay Time - 25.6 - ns Tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 114 - uJ Ets Total Switching Loss - 507 - uJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Emitter Charge ©2015 Fairchild Semiconductor Corporation FGD5T120SH Rev. 1.0 VCC = 600 V, IC = 5 A, RG = 30 Ω, VGE = 15 V, Inductive Load, TC = 150oC VCC = 600 V, IC = 5 A, VGE = 15 V 2 - 134 - ns - 393 - uJ - 6.7 - nC - 1.8 - nC - 2.6 - nC www.fairchildsemi.com FGD5T120SH — 1200 V, 5 A FS Trench IGBT Thermal Characteristics Figure 1. Typical Output Characteristics 15 o 12 15V VGE = 17V 12 13V 9 11V 6 9V 3 2 4 6 8 Collector-Emitter Voltage, VCE [V] 13V 11V 6 9V 3 7V 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 15 15 Common Emitter VCE = 20V Common Emitter VGE = 15V 12 o Collector Current, IC [A] Collector Current, IC [A] 15V 9 0 10 Figure 3. Typical Saturation Voltage Characteritics TC = 25 C o TC = 150 C 9 6 3 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 10A 6 5A IC = 3A 2 25 FGD5T120SH Rev. 1.0 6 o 150 C o TC = 25 C 3 0 4 8 12 Gate-Emitter Voltage,VGE [V] 16 3 Common Emitter o TC = -40 C 16 12 5A 8 IC = 3A 10A 4 0 50 75 100 125 150 o Collector-Emitter Case Temperature, TC [ C] ©2015 Fairchild Semiconductor Corporation o -40 C 20 8 4 9 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 10 12 0 10 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] VGE = 17V 7V 0 0 o TC = 150 C Collector Current, IC [A] Collector Current, IC [A] TC = 25 C Figure 2. Typical Output Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGD5T120SH — 1200 V, 5 A FS Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 5A 8 10A IC = 3A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 16 5A 12 8 4 Common Emitter o 0 20 Figure 9. Capacitance Characteristics 10A IC = 3A TC = 150 C 4 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate Charge Characteristics 15 500 Common Emitter Gate-Emitter Voltage, VGE [V] o Cies Capacitance [pF] 20 100 Coes 10 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 400V 12 VCC = 200V 600V 9 6 3 o TC = 25 C 1 0 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 30 Figure 11. SOA Characteristics 0 2 4 6 Gate Charge, Qg [nC] 8 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 50 tr 10μs DC Switching Time [ns] Collector Current, Ic [A] 10 100μs 1ms 10 ms 1 0.1 *Notes: o 10 Common Emitter VCC = 600V, VGE = 15V IC = 5A 1. TC = 25 C o TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 o TC = 150 C 1 30 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] ©2015 Fairchild Semiconductor Corporation FGD5T120SH Rev. 1.0 td(on) 4 60 90 120 Gate Resistance, RG [Ω] 150 www.fairchildsemi.com FGD5T120SH — 1200 V, 5 A FS Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics VS. Gate Resistance Figure 14.Turn-on Characteristics VS. Collector Current 100 1000 Common Emitter VGE = 15V, RG = 30Ω Common Emitter VCC = 600V, VGE = 15V IC = 5A o TC = 25 C o TC = 25 C o TC = 150 C Switching Time [ns] Switching Time [ns] o tf 100 td(off) 10 30 TC = 150 C 10 td(on) 1 60 90 120 Gate Resistance, RG [Ω] 150 Figure 15.Turn-off Characteristics VS. Collector Current 2 4 6 8 Collector Current, IC [A] 10 Figure 16.Switching Loss VS. Gate Resistance 1000 1000 Common Emitter VGE = 15V, RG = 30Ω Eon o TC = 25 C o TC = 150 C Switching Loss [uJ] Switching Time [ns] tr tf 100 td(off) 100 Eoff Common Emitter VCC = 600V, VGE = 15V IC = 5A o TC = 25 C o 10 TC = 150 C 2 4 6 8 Collector Current, IC [A] 10 30 10 Figure 17. Switching Loss VS. Collector Current 150 Figure 18. Current Derating 1000 10 100 ICE, Collector Current [A] Eon Switching Loss [uJ] 60 90 120 Gate Resistance, RG [Ω] Eoff Common Emitter VGE = 15V, RG = 30Ω o TC = 25 C 8 6 4 2 o TC = 150 C 10 2 4 6 8 0 25 10 Collector Current, IC [A] ©2015 Fairchild Semiconductor Corporation FGD5T120SH Rev. 1.0 5 50 75 100 o 125 Case temperature, TC [ C] 150 www.fairchildsemi.com FGD5T120SH — 1200 V, 5 A FS Trench IGBT Typical Performance Characteristics FGD5T120SH — 1200 V, 5 A FS Trench IGBT Figure 19. Load Current Vs. Frequency 25 Square Wave Collector Current, [A] o TJ