FGH15T120SMD-F155

IGBT - Field Stop, Trench 1200 V, 15 A FGH15T120SMD Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. www.onsemi.com C Features • • • • • • FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 15 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance This Device is Pb−Free and is RoHS Compliant G E E C G Applications • Solar Inverter, Welder, UPS & PFC Applications COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAMS $Y&Z&3&K FGH15T120 SMD $Y &Z &3 &K FGH15T120SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 May, 2020 − Rev. 4 1 Publication Order Number: FGH15T120SMD/D FGH15T120SMD ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Symbol Ratings Unit Collector to Emitter Voltage VCES 1200 V Gate to Emitter Voltage VGES ±25 V ±30 V 30 A 15 A ILM 60 A ICM 60 A IF 30 A 15 A Parameter Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Clamped Inductive Load Current (Note 1) TC = 25°C Pulsed Collector Current (Note 2) Diode Continuous Forward Current TC = 25°C Diode Continuous Forward Current TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IC IFM 100 A PD 333 W 167 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 600 V, VGE = 15 V, IC = 60 A, RG = 34 , Inductive Load 2. Limited by Tjmax THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case, Max. (IGBT) RJC 0.45 °C/W Thermal Resistance, Junction to Case, Max. (Diode) RJC 2.0 °C/W Thermal Resistance, Junction to Ambient, Max. RJA 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH15T120SMD FGH15T120SMD−F155 TO−247−3LD − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 1200 − − V Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 15 mA, VCE = VGE 4.9 6.2 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 15 A, VGE = 15 V, TC = 25°C − 1.8 2.4 V IC = 15 A, VGE = 15 V, TC = 175°C − 1.9 − V ON CHARACTERISTICS www.onsemi.com 2 FGH15T120SMD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 1460 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 65 − pF Reverse Transfer Capacitance Cres − 37 − pF − 32 − ns − 47 − ns td(off) − 490 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 15 A, RG = 34  VGE = 15 V, Inductive Load, TC = 25°C tf − 12 − ns Turn−On Switching Loss Eon − 1.15 − mJ Turn−Off Switching Loss Eoff − 0.46 − mJ Total Switching Loss Ets − 1.61 − mJ Turn−On Delay Time td(on) − 32 − ns − 42 − ns td(off) − 510 − ns tf − 24 − ns Turn−On Switching Loss Eon − 1.86 − mJ Turn−Off Switching Loss Eoff − 0.70 − mJ Total Switching Loss Ets − 2.56 − mJ Total Gate Charge Qg − 128 − nC Gate to Emitter Charge Qge − 11 − nC Gate to Collector Charge Qgc − 70 − nC Min Typ Max Unit IF = 15 A, TC = 25°C − 2.8 3.7 V IF = 15 A, TC = 175°C − 2.3 − V VR = 600 V, IF = 15 A, diF/dt = 200 A/s, TC = 25°C − 72 − ns − 7.4 − A − 270 − nC − 120 − J Rise Time tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 15 A, RG = 34  VGE = 15 V, Inductive Load, TC = 175°C VCE = 600 V, IC = 15 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Parameter Diode Forward Voltage Symbol VFM Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Reverse Recovery Energy Erec Test Conditions VR = 600 V, IF = 15 A, dIF/dt = 200 A/s, TC = 175°C Diode Reverse Recovery Time trr − 183 − ns Diode Peak Reverse Recovery Current Irr − 12 − A Diode Reverse Recovery Charge Qrr − 1085 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH15T120SMD TYPICAL PERFORMANCE CHARACTERISTICS 60 TC = 25°C 15 V 20 V 48 IC, Collector Current (A) IC, Collector Current (A) 60 12 V 36 10 V 24 12 VGE = 8 V 0 0.0 2.0 4.0 6.0 8.0 36 10 V 24 VGE = 8 V 12 0.0 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) 3.0 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 48 36 24 12 0 0.0 1.0 2.0 3.0 4.0 10.0 2.0 4.0 6.0 8.0 VCE, Collector−Emitter Voltage (V) Figure 2. Typical Output Characteristics Figure 1. Typical Output Characteristics 60 2.0 15 A 1.5 IC = 8 A 25 50 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 20 15 15 A 0 30 A IC = 8 A 4 8 12 16 100 125 150 175 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter TC = 25°C 5 75 TC, Case Temperature (°C) Figure 3. Typical Saturation Voltage Characteristics 10 30 A 2.5 1.0 5.0 Common Emitter VGE = 15 V VCE, Collector−Emitter Voltage (V) 20 12 V 15 V 20 V 48 0 10.0 TC = 175°C 16 15 A 12 30 A 8 4 0 20 Common Emitter TC = 175°C IC = 8 A 4 8 12 16 20 VGE, Gate−Emitter Voltage (V) VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. VGE www.onsemi.com 4 FGH15T120SMD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 15 VGE, Gate−Emitter Voltage (V) Capacitance (pF) 10000 Cies 1000 Coes 100 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 20 1 Cres 12 400 V VCC = 200 V 9 3 0 Switching Time (ns) Switching Time (ns) 100 tf 10 28 Common Emitter VCC = 600 V, VGE = 15 V IC = 15 A TC = 25°C TC = 175°C 1 0.1 14 42 56 70 0 14 RG, Gate Resistance () 20 300 Switching Time (ns) Switching Loss (mJ) 10 Eon 1 Eoff 0.1 0 14 28 42 56 28 42 56 RG, Gate Resistance () 70 Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance Common Emitter VCC = 600 V, VGE = 15 V IC = 15 A TC = 25 TC = 175°C 130 td(off) 1000 td(on) 0 52 78 104 Qg, Gate Charge (nC) 10000 Common Emitter VCC = 600 V, VGE = 15 V IC = 15 A TC = 25°C TC = 175°C tr 10 26 Figure 8. Gate Charge Characteristics Figure 7. Capacitance Characteristics 100 600 V 6 0 30 10 VCE, Collector−Emitter Voltage (V) Common Emitter TC = 25°C 100 tr td(on) 10 70 Common Emitter VGE = 15 V, RG = 34  TC = 25°C TC = 175°C 0 6 12 18 24 30 IC, Collector Current (A) RG, Gate Resistance () Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 FGH15T120SMD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1000 10 Common Emitter VGE = 15 V, RG = 34  TC = 25°C TC = 175°C Switching Loss (mJ) Switching Time (ns) td(off) 100 tf 10 Common Emitter VGE = 15 V, RG = 34  TC = 25°C TC = 175°C 1 0 6 12 18 24 1 Eoff 0.1 30 0 6 150 200 100 Duty Cycle: 50% TC = 100°C Power Dissipation = 167 W 50 TC = 100°C 10k ICMAX(Continuous) DC Operation 1 1 Irr, Reverse Recovery Current (A) IF, Forward Current (A) 100 TC = 175°C 10 TC = 25°C 2 3 4 10 100 1000 Figure 16. SOA Characteristics 20 1 10 ms VCE, Collector−Emitter Voltage (V) 300 0 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.01 1M 100k 100 s 10 Figure 15. Load Current vs. Frequency 0.1 30 ICMAX(Pulse) f, Switching Frequency (Hz) 1 24 10 s IC, Collector Current (A) IC, Collector Current (A) VCE = 600 V Load Current: Peak of Square Wave 1k 18 Figure 14. Switching Loss vs. Collector Current Figure 13. Turn−Off Characteristics vs. Collector Current 0 12 IC, Collector Current (A) IC, Collector Current (A) 100 Eon 15 VF, Forward Voltage (V) diF/dt = 200 A/s 10 diF/dt = 100 A/s diF/dt = 200 A/s 5 diF/dt = 100 A/s 0 5 TC = 25°C TC = 175°C 5 10 15 20 25 IF, Forward Current (A) 30 Figure 18. Reverse Recovery Current Figure 17. Forward Characteristics www.onsemi.com 6 FGH15T120SMD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1.4 Qrr, Stored Recovery Charge (nC) TC = 25°C TC = 175°C 250 diF/dt = 100 A/s 200 diF/dt = 200 A/s 150 100 diF/dt = 200 A/s 5 10 15 20 25 TC = 25°C TC = 175°C 1.2 diF/dt = 200 A/s 1.0 diF/dt = 100 A/s 0.8 0.6 0.4 diF/dt = 200 A/s 0.2 0.0 30 diF/dt = 100 A/s 0 10 20 30 40 IF, Forward Current (A) IF, Forward Current (A) Figure 19. Reverse Recovery Time Figure 20. Stored Charge 0.5 Thermal Response (Zjc) 50 diF/dt = 100 A/s 0.5 0.1 0.01 0.3 0.1 0.05 0.02 0.01 Single Pulse 1E−3 1E−5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−4 0.01 1E−3 0.1 1 Rectangular Pulse Duration (sec) Figure 21. Transient Thermal Impedance of IGBT 3 Thermal Response (Zjc) trr, Reverse Recovery Time (ns) 300 1 0.1 0.5 0.3 0.1 0.05 PDM 0.02 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC Single Pulse 0.01 10−5 10−4 10−2 10−3 10−1 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 100 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales