FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• 100kHz Operation at 390V, 7A
•
•
•
•
•
•
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• Low Conduction Loss
• Low Eon
Formerly Developmental Type TA49330.
Package
Symbol
TO-247
C
E
C
G
TO-220AB
E
C
TO-263AB
G
G
G
E
COLLECTOR
(Back-Metal)
E
COLLECTOR
(Flange)
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
A
IC25
Collector Current Continuous, TC = 25°C
28
IC110
Collector Current Continuous, TC = 110°C
13
A
Collector Current Pulsed (Note 1)
40
A
ICM
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
35 at 600V
A
100
mJ
mJ
EAS
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
EARV
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100
Power Dissipation Total TC = 25°C
125
W
Power Dissipation Derating TC > 25°C
1.0
W/°C
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
PD
TJ
TSTG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
August 2003
Device Marking
20N6S2
Device
FGH20N6S2
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30 Units
20N6S2
FGP20N6S2
TO-220AB
Tube
N/A
50 Units
20N6S2
FGB20N6S2
TO-263AB
Tube
N/A
50 Units
20N6S2
FGB20N6S2T
TO-263AB
330mm
24mm
800 Units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0
600
-
-
V
BVECS
Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0
20
-
-
V
TJ = 25°C
-
-
250
µA
TJ = 125°C
-
-
2.0
mA
-
-
±250
nA
TJ = 25°C
-
2.2
2.7
V
TJ = 125°C
-
1.9
2.2
V
VGE = 15V
-
30
36
nC
VGE = 20V
-
38
45
nC
3.5
4.3
5.0
V
-
6.5
8.0
V
ICES
IGES
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
VCE = 600V
VGE = ± 20V
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage IC = 7.0A,
VGE = 15V
Dynamic Characteristics
QG(ON)
VGE(TH)
VGEP
Gate Charge
IC = 7.0A,
VCE = 300V
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = 600V
Gate to Emitter Plateau Voltage
IC = 7.0A, VCE = 300V
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, RG = 25Ω, VGE =
15V , L = 0.5mH, Vce = 600V
35
-
-
A
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 20
-
7.7
-
ns
-
4.5
-
ns
-
87
-
ns
-
50
-
ns
-
25
-
µJ
-
85
-
µJ
-
58
75
µJ
-
7
-
ns
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 1)
EON2
Turn-On Energy (Note 1)
EOFF
Turn-Off Energy (Note 2)
td(ON)I
Current Turn-On Delay Time
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 1)
EON2
Turn-On Energy (Note 1)
EOFF
Turn-Off Energy (Note 2)
IGBT and Diode at TJ = 125°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 20
-
4.5
-
ns
-
120
145
ns
-
85
105
ns
-
20
-
µJ
-
125
140
µJ
-
135
180
µJ
-
-
1.0
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
NOTE:
1. Values
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 20.
2. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Package Marking and Ordering Information
30
20
15
10
5
0
TJ = 150oC, RG = 25Ω, VGE = 15V, L = 500µH
35
30
25
20
15
10
5
0
25
50
75
100
125
150
100
0
TC , CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
400
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
400
500
600
VGE = 15V
VGE = 10V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.27oC/W, SEE NOTES
TJ = 125oC, RG = 25Ω, L = 500µH, V CE = 390V
20
VCE = 390V, RG = 25Ω, TJ = 125oC
180
10
tSC
150
8
ISC
6
120
4
90
2
1
700
210
12
TC = 75oC
10
60
9
20
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
14
14
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
300
Figure 2. Minimum Switching Safe Operating Area
700
12
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
VGE = 15V
10
8
6
TJ = 25oC
TJ = 150oC
4
2
TJ = 125oC
0
0.50
12
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250µs
10
8
6
TJ = 25oC
TJ = 150oC
4
2
TJ = 125oC
0
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
2.75
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
0.50
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Typical Performance Curves
350
400
RG = 25Ω, L = 500µH, VCE = 390V
350
300
EOFF TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS ( µJ)
RG = 25Ω, L = 500µH, VCE = 390V
300
TJ = 25oC, TJ = 125oC, VGE = 10V
250
200
150
100
50
250
200
TJ = 125oC, VGE = 10V, VGE = 15V
150
100
50
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 25oC, TJ = 125oC, VGE = 15V
0
0
0
2
4
6
8
10
12
0
14
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
4
6
8
10
12
14
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
35
13
RG = 25Ω, L = 500µH, VCE = 390V
RG = 25Ω, L = 500µH, VCE = 390V
12
30
11
25
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
TJ = 25oC, TJ = 125oC, VGE = 10V
9
TJ = 25oC, TJ = 125oC, VGE = 15V
8
20
TJ = 25oC, TJ = 125oC, VGE = 10V
15
10
7
5
6
0
TJ = 25oC, TJ = 125oC, VGE =15V
0
2
4
6
8
10
12
0
14
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
4
6
8
10
12
14
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
140
120
RG = 25Ω, L = 500µH, VCE = 390V
RG = 25Ω, L = 500µH, VCE = 390V
VGE = 10V, VGE = 15V, TJ =
125oC
120
100
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
100
80
TJ = 125oC, VGE = 10V or 15V
80
60
TJ = 25oC, VGE = 10V or 15V
VGE = 10V, VGE = 15V, TJ = 25oC
60
40
0
2
4
6
8
10
12
14
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2003 Fairchild Semiconductor Corporation
0
2
4
6
8
10
12
14
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Typical Performance Curves (Continued)
16
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
IG(REF) = 1mA, RL = 42.6Ω, TJ = 25oC
100
80
TJ = 25oC
60
40
TJ = 125oC
20
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
120
14
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
TJ = -55oC
0
0
4
6
8
10
12
14
0
16
5
10
VGE, GATE TO EMITTER VOLTAGE (V)
0.8
RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
0.6
ICE = 14A
0.4
ICE = 7A
0.2
ICE = 3A
0
50
75
100
25
30
35
125
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1
ICE = 14A
ICE = 7A
ICE = 3A
0.1
0.05
1
150
10
TC , CASE TEMPERATURE (oC)
100
1000
RG, GATE RESISTANCE (Ω)
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
1.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.6
FREQUENCY = 1MHz
1.0
C, CAPACITANCE (nF)
20
Figure 14. Gate Charge
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
Figure 13. Transfer Characteristic
25
15
QG , GATE CHARGE (nC)
0.8
CIES
0.6
0.4
COES
0.2
CRES
0.0
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, TJ = 25oC
3.4
3.2
ICE = 14A
3.0
ICE = 7A
2.8
2.6
ICE = 3A
2.4
2.2
2.0
0
10
20
30
40
50
60
70
80
90
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
©2003 Fairchild Semiconductor Corporation
5
6
7
8
9
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Typical Performance Curves (Continued)
ZθJC , NORMALIZED THERMAL RESPONSE
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH20N6S2D
DIODE TA49469
90%
10%
VGE
EON2
EOFF
L = 500µH
VCE
RG = 25Ω
90%
+
FGH20N6S2
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 20. Inductive Switching Test Circuit
©2003 Fairchild Semiconductor Corporation
Figure 21. Switching Test Waveforms
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Typical Performance Curves (Continued)
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM . td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 21. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Handling Precautions for IGBTs
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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