IGBT - Field Stop, Trench
1200 V, 25 A
FGH25N120FTDS
Description
Using advanced field stop trench technology, ON Semiconductor’s
1200 V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder and PFC
applications.
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C
Features
•
•
•
•
High Speed Switching
Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
High Input Impedance
These Device is Pb−Free and is RoHS Compliant
G
E
Applications
• Solar Inverter, UPS, Welder, PFC
G
C
E
TO−247−3
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH25N120
FTDS
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FGH25N120FTDS = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
February, 2020 − Rev. 3
1
Publication Order Number:
FGH25N120FTDS/D
FGH25N120FTDS
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Rating
Unit
Collector to Emitter Voltage
VCES
1200
V
Gate to Emitter Voltage
VGES
±25
V
IC
50
A
Description
Collector Current
TC = 25°C
Collector Current
TC = 100°C
25
A
ICM (Note 1)
75
A
IF
50
A
25
A
IFM
75
A
PD
313
W
125
W
Operating Junction Temperature
TJ
−55 to +150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
TL
300
°C
Pulsed Collector Current
Diode Forward Current
TC = 25°C
Diode Forward Current
TC = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation
TC = 25°C
Maximum Power Dissipation
TC = 100°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
Thermal Resistance, Junction to Case
RJC(IGBT)
Thermal Resistance, Junction to Case
RJC(Diode)
RJA
Thermal Resistance, Junction to Ambient
Max
Unit
−
0.4
°C/W
−
1.25
°C/W
−
40
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH25N120FTDS
FGH25N120FTDS
TO−247
(Pb−Free)
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVCES
VGE = 0 V, IC = 250 A
1200
−
−
V
Collector Cut−Off Current
ICES
VCE = VCES, VGE = 0 V
−
−
1
mA
G−E Leakage Current
IGES
VGE = VGES, VCE = 0 V
−
−
±250
nA
G−E Threshold Voltage
VGE(th)
IC = 25 mA, VCE = VGE
3.5
6
7.5
V
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 25 A, VGE = 15 V
−
1.6
2
V
IC = 25 A, VGE = 15 V, TC = 125°C
−
1.92
−
V
Collector to Emitter Breakdown Voltage
ON CHARACTERISTICs
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2
FGH25N120FTDS
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
4090
−
pF
DYNAMIC CHARACTERISTICS
VCE = 30 V, VGE = 0 V, f = 1 MHz
Input Capacitance
Cies
Output Capacitance
Coes
−
135
−
pF
Reverse Transfer Capacitance
Cres
−
75
−
pF
−
26
35
ns
−
41
53
ns
td(off)
−
151
196
ns
SWITCHING CHARACTERISTICS
Turn−On Delay Time
VCC = 600 V, IC = 25 A,
RG = 10 VGE = 15 V,
Inductive Load, TC = 25°C
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
tf
−
102
132
ns
Turn−On Switching Loss
Eon
−
1.42
1.84
mJ
Turn−Off Switching Loss
Eoff
−
1.16
1.5
mJ
Total Switching Loss
Ets
−
2.58
3.34
mJ
Turn−On Delay Time
td(on)
−
22
−
ns
−
41
−
ns
td(off)
−
163
−
ns
tf
−
136
−
ns
Turn−On Switching Loss
Eon
−
2.04
−
mJ
Turn−Off Switching Loss
Eoff
−
1.58
−
mJ
Total Switching Loss
Ets
−
3.62
−
mJ
Total Gate Charge
Qg
−
169
225
nC
Gate to Emitter Charge
Qge
−
33
44
nC
Gate to Collector Charge
Qgc
−
78
104
nC
Min
Typ
Max
Unit
TC = 25°C
−
2.5
3.5
V
TC = 125°C
−
2.3
−
TC = 25°C
−
411
535
TC = 125°C
−
496
−
TC = 25°C
−
5.2
6.8
TC = 125°C
−
6.9
−
TC = 25°C
−
1.1
1.82
TC = 125°C
−
1.7
−
Rise Time
VCC = 600 V, IC = 25 A,
RG = 10 VGE = 15 V,
Inductive Load, TC = 125°C
tr
Turn−Off Delay Time
Fall Time
VCE = 600 V, IC = 25 A, VGE = 15 V
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Parametr
Diode Forward Voltage
Diode Reverse Recovery Time
Symbol
VFM
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery Charge
Qrr
Test Conditions
IF = 25 A
IF = 25 A, diF/dt = 200 A/s
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3
ns
A
C
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS
180
180
150
20 V
17 V
12 V
15 V
120
90
10 V
60
9V
30
0
VGE = 8 V
4
6
2
Collector−Emitter Voltage, VCE [V]
0
10 V
60
9V
VGE = 8 V
30
0
2
4
6
Collector−Emitter Voltage, VCE [V]
8
Common Emitter
VGE = 20 V
TC = 25°C
TC = 125°C
100
Collector Current, IC [A]
Collector Current, IC [A]
90
60
40
20
80
60
40
20
0
2
4
Collector−Emitter Voltage, VCE [V]
0
6
0
Figure 3. Typical Saturation Voltage
Characteristics
2.5
2.0
1.5
1.0
25
Common Emitter
VGE = 15 V
15
10
5
Gate−Emitter Voltage, VGE [V]
Figure 4. Transfer Characteristics
20
Collector−Emitter Voltage, VCE [V]
3.0
Collector−Emitter Voltage, VCE [V]
12 V
120
80
0
15 V
120
Figure 2. Typical Output Characteristics
Common Emitter
VGE = 15 V
TC = 25°C
TC = 125°C
100
20 V
17 V
0
8
Figure 1. Typical Output Characteristics
120
TC = 125°C
150
Collector Current, IC [A]
Collector Current, IC [A]
TC = 25°C
50 A
25 A
IC = 10 A
50
75
100
Case Temperature, TC [°C]
16
12
8
50 A
4
0
125
Common Emitter
TC = 25°C
25 A
IC = 10 A
0
4
8
12
16
20
Gate Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs VGE
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4
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
140
Common Emitter
TC = 125°C
16
120
Load Current [A]
Collector−Emitter Voltage, VCE [V]
20
12
8
0
25 A
IC = 10 A
0
4
12
8
16
0
100
20
15
8000
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
6000
Gate−Emitter Voltage, VGE [V]
Capacitance [pF]
103
101
102
Frequency [kHz]
Figure 8. Load Current vs. Frequency
Figure 7. Saturation Voltage vs. VGE
Cies
4000
Coes
2000
Cres
1
10
Collector−Emitter Voltage, VCE [V]
200
100
600 V
400 V
9
6
3
80
40
0
120
160
200
Gate Charge, Qg [nC]
Figure 10. Gate Charge Characteristics
10 s
Switching Time [ns]
100 s
1 ms
10 ms
DC
1
0.01
1
VCC = 200 V
200
10
0.1
Common Emitter
TC = 25°C
12
0
30
Figure 9. Capacitance Characteristics
Collector Current, IC [A]
60
20
Gate−Emitter Voltage, VGE [V]
0
80
40
50 A
4
100
*Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10
100
100
tr
td(on)
10
1000 3000
Collector−Emitter Voltage, VCE [V]
0
Common Emitter
VCC = 600 V, VGE = 15 V
IC = 25 A
TC = 25°C
TC = 125°C
10
20
30
40
Gate Resistance, RG []
50
Figure 12. Turn−On Characteristics vs. Gate
Resistance
Figure 11. SOA Characteristics Gate
Resistance
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FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Switching Time [ns]
1000
100
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VCC = 600 V, VGE = 15 V
IC = 25 A
TC = 25°C
TC = 125°C
0
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 125°C
10
20
30
40
Gate Resistance, RG []
tr
td(on)
10
50
0
10
1000
10
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 125°C
Common Emitter
VCC = 600 V, VGE = 15 V
IC = 25 A
TC = 25°C
TC = 125°C
Switching Loss [mJ]
Switching Time [ns]
50
Figure 14. Turn−on Characteristics
vs. Collector Current
Figure 13. Turn−Off Characteristics vs. Gate
Resistance
tf
100
20
30
40
Collector Current, IC [A]
td(off)
Eon
Eoff
20
0
10
20
30
40
1
50
0
10
Collector Current, IC [A]
10
100
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 125°C
Eon
Collector Current, IC [A]
Switching Loss [mJ]
50
Figure 16. Switching Loss vs. Gate
Resistance
Figure 15. Turn−off Characteristics vs.
Collector Current
Eoff
1
0.1
20
30
40
Gate Resistance, RG []
0
10
20
30
Collector Current, IC [A]
40
10
1
50
Safe Operating Area
VGE = 15 V, TC = 125°C
1
100
1000 3000
10
Collector−Emitter Voltage, VCE [V]
Figure 18. Turn−off Switching SOA
Characteristics
Figure 17. Switching Loss vs. Collector
Current
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6
FGH25N120FTDS
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
7
Reverse Recovery Current, Irr [A]
Forward Current, IF [A]
30
10
TJ = 125°C
TJ = 25°C
1
TC = 25°C
TC = 125°C
0.1
0
1
6
5
4
diF/dt = 100 A/s
3
TC = 25°C
2
10
3
2
200 A/s
20
30
40
Forward Current, IF [A]
Forward Voltage, VF [V]
Figure 20. Reverse Recovery Current
Figure 19. Forward Characteristics
1200
Reverse Recovery Time, trr [ns]
1.5
200 A/s
1.0
diF/dt = 100 A/s
0.5
1000
TC = 25°C
20
30
40
Forward Current, IF [A]
diF/dt = 100 A/s
800
200 A/s
600
TC = 25°C
400
10
50
20
30
Forward Current, IF [A]
Figure 22. Reverse Recovery Time
Figure 21. Stored Charge
1
Thermal Response [Zjc]
Stored Recovery Charge, Qrr [ C]
2.0
0.0
10
50
0.1 0.5
0.2
0.1
0.05
0.01 0.02
0.01
Single Pulse
0.001
1E−5
0.0001
PDM
t1
t2
Duty Factor, D = t1/t2
Peak TJ = Pdm x Zjc + TC
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 23. Transient Thermal Impedance of IGBT
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7
1
10
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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