IGBT - Shorted-anode
1500 V, 30 A
FGH30S150P
Description
Using advanced field stop trench and shorted−anode technology,
ON Semiconductor’s shorted−anode trench IGBTs offer superior
conduction and switching performances for soft switching
applications. The device can operate in parallel configuration with
exceptional avalanche capability. This device is designed for induction
heating and microwave oven.
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C
Features
•
•
•
•
G
High Speed Switching
Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A
High Input Impedance
This Device is Pb−Free and is RoHS Compliant
E
E
Applications
C
G
• Induction Heating, Microwave Oven
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH30S
150P
$Y
&Z
&3
&K
FGH30S150P
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February, 2020 − Rev. 2
1
Publication Order Number:
FGH30S150P/D
FGH30S150P
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Rating
Unit
Collector to Emitter Voltage
VCES
1500
V
Gate to Emitter Voltage
VGES
±25
V
IC
60
A
Description
Collector Current
TC = 25°C
Collector Current
TC = 100°C
Pulsed Collector Current
Diode Continuous Forward Current
TC = 25°C
Diode Continuous Forward Current
TC = 100°C
Maximum Power Dissipation
TC = 25°C
Maximum Power Dissipation
TC = 100°C
30
A
ICM (Note 1)
90
A
IF
60
A
30
A
500
W
250
W
PD
Operating Junction Temperature
TJ
−55 to +175
°C
Storage Temperature Range
Tstg
−55 to +175
°C
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Limited by Tjmax.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case, Max
Symbol
Typ
Max
Unit
RJC(IGBT)
−
0.3
°C/W
RJA
−
40
°C/W
Thermal Resistance, Junction to Ambient, Max
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH30S150P
FGH30S150P
TO−247
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BVCES
VGE = 0 V, IC = 1 mA
1500
−
−
V
Temperature Coefficient of Breakdown
Voltage
BVCES/TJ
VGE = 0 V, IC = 1 mA
−
1.5
−
V/°C
Collector Cut−Off Current
ICES
VCE = 1500, VGE = 0 V
−
−
1
mA
G−E Leakage Current
IGES
VGE = VGES, VCE = 0 V
−
−
±500
nA
G−E Threshold Voltage
VGE(th)
IC = 30 mA, VCE = VGE
4.5
6.0
7.5
V
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 30 A, VGE = 15 V, TC = 25°C
−
1.85
2.4
V
IC = 30 A, VGE = 15 V, TC = 125°C
−
2.06
−
V
IC = 30 A, VGE = 15 V, TC = 175°C
−
2.15
−
V
IF = 30 A, TC = 25°C
−
1.61
2.2
V
IF = 30 A, TC = 175°C
−
1.96
−
V
ON CHARACTERISTICs
Diode Forward Voltage
VFM
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FGH30S150P
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
3310
−
pF
DYNAMIC CHARACTERISTICS
VCE = 30 V, VGE = 0 V, f = 1 MHz
Input Capacitance
Cies
Output Capacitance
Coes
−
70
−
pF
Reverse Transfer Capacitance
Cres
−
55
−
pF
−
32
−
ns
−
292
−
ns
td(off)
−
492
−
ns
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
VCC = 600 V, IC = 30 A,
RG = 10 VGE = 15 V,
Resistive Load, TC = 25°C
tf
−
214
−
ns
Turn−On Switching Loss
Eon
−
1.16
−
mJ
Turn−Off Switching Loss
Eoff
−
0.9
−
mJ
Total Switching Loss
Ets
2.06
−
mJ
Turn−On Delay Time
td(on)
−
36
−
ns
−
336
−
ns
td(off)
−
560
−
ns
tf
−
520
−
ns
Turn−On Switching Loss
Eon
−
1.39
−
mJ
Turn−Off Switching Loss
Eoff
−
1.86
−
mJ
Total Switching Loss
Ets
−
3.25
−
mJ
Total Gate Charge
Qg
−
369
−
nC
Gate to Emitter Charge
Qge
−
23.5
−
nC
Gate to Collector Charge
Qgc
−
199
−
nC
Rise Time
Turn−Off Delay Time
Fall Time
tr
VCC = 600 V, IC = 30 A,
RG = 10 VGE = 15 V,
Resistive Load, TC = 175°C
VCE = 600 V, IC = 30 A, VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS
20 V
TC = 25°C
200
15 V
VGE = 17 V
160
Collector Current, IC [A]
Collector Current, IC [A]
200
12 V
120
80
10 V
9V
40
TC = 175°C
20 V
7V
4
6
2
Collector−Emitter Voltage, VCE [V]
120
12 V
80
10 V
9V
40
8V
7V
0
8
200
160
Common Emitter
VCE = 20 V
TC = 25°C
TC = 175°C
Collector Current, IC [A]
160
120
80
Common Emitter
VGE = 15 V
TC = 25°C
TC = 175°C
40
0
80
40
0
8
2
4
6
Collector−Emitter Voltage, VCE [V]
120
0
Figure 3. Typical Saturation Voltage
Characteristics
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
60 A
3
30 A
2
IC = 15 A
50
75
6
9
12
15
Gate−Emitter Voltage, VGE [V]
18
20
Common Emitter
VGE = 15 V
25
3
Figure 4. Transfer Characteristics
4
1
8
Figure 2. Typical Output Characteristics
200
Collector Current, IC A]
6
4
2
Collector−Emitter Voltage, VCE [V]
0
Figure 1. Typical Output Characteristics
0
15 V
160
8V
0
17 V
100
125
150
16
12
Collector −Emitter Case Temperature, TC [°C]
30 A
8
IC = 15 A
60 A
4
0
175
Common Emitter
TC = 25°C
4
8
12
16
Gate−Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
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4
20
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
10000
Common Emitter
TC = 175°C
16
Cies
Capacitance [pF]
Collector−Emitter Voltage, VCE [V]
20
12
30 A
8
60 A
4
0
1000
10
Gate−Emitter Voltage, VGE [V]
5
10
15
20
25
Collector−Emitter Voltage, VCE [V]
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristic
16
12
8
4
20
400 V
VCC = 200 V
9
DC
600 V
6
3
0
80
160
240
320
Gate Charge, Qg [nC]
1
0.1
10000
Switching Time [ns]
Switching Time [ns]
tr
100
td(on)
Common Emitter
VCC = 600 V, VGE = 15 V
IC = 30 A
TC = 25°C
TC = 175°C
30
40
50
60
Gate Resistance, RG []
*Notes:
1.TC = 25°C
1. TJ = 175°C
3. Single Pulse
10
100
1000 3000
Collector−Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
1000
20
1 ms 100 s
10 ms
0.01
1
400
50 s
10
Figure 9. Gate Charge Characteristics
10
30
200
100
Collector Current, IC [A]
Gate−Emitter Voltage, VGE [V]
Common Emitter
TC = 25°C
12
10
Cres
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
IC = 15 A
15
0
Coes
100
Common Emitter
VCC = 600 V, VGE = 15 V
IC = 30 A
TC = 25°C
TC = 175°C
td(off)
1000
tf
100
10
70
20
30
40
50
60
70
Gate Resistance, RG []
Figure 12. Turn−Off Characteristics vs. Gate
Resistance
Figure 11. Turn−On Characteristics vs. Gate
Resistance
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FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
4000
1000
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 175°C
tf
tr
Switching Time [ns]
Switching Time [ns]
1000
100
td(on)
10
10
20
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 175°C
100
50
60
30
40
50
Collector Current, IC [A]
td(off)
10
Eoff
1
0.5
10
20
1
Eoff
Common Emitter
VGE = 15 V, RG = 10
TC = 25°C
TC = 175°C
20
40
50
30
Collector Current, IC [A]
60
Figure 16. Switching Loss vs. Collector
Current
100
60
Forward Current, IF [A]
Collector Current, IC [A]
Eon
0.05
10
60
30
40
50
Gate Resistance, RG []
Figure 15. Switching Loss vs. Gate
Resistance
10
Safe Operating Area
VGE = 15 V, TC = 175°C
1
60
5
Switching Loss [mJ]
Switching Loss [mJ]
10
Eon
30
40
50
Collector Current, IC [A]
Figure 14. Turn−Off Characteristics
vs. Collector Current
Figure 13. Turn−On Characteristics
vs. Collector Current
Common Emitter
VCC = 600 V, VGE = 15 V
IC = 30 A
TC = 25°C
TC = 175°C
20
1
10
100
TJ = 25°C
TJ = 175°C
10
1
0.5
1000
Collector−Emitter Voltage, VCE [V]
TJ = 25°C
TJ = 175°C
0
1
2
Forward Voltage, VF [V]
Figure 18. Forward Characteristics
Figure 17. Turn−Off Switching SOA
Characteristics
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6
3
FGH30S150P
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Thermal Response [Zjc]
0.4
0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
7E−3
1E−5
1E−4
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zjc + TC
1E−3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 19. Transient Thermal Impedance of IGBT
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7
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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