FGH40N60SFDTU

FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD Description Collector to Emitter Voltage Ratings Unit 600 V Gate to Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 V Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A 25oC 120 A o W Pulsed Collector Current @ TC = Maximum Power Dissipation @ TC = 25 C 290 Maximum Power Dissipation @ TC = 100oC 116 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C C oC 300 Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 0.43 Unit o C/W C/W C/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.45 o RθJA Thermal Resistance, Junction to Ambient - 40 o ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 1 www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 Part Number Top Mark FGH40N60SFDTU FGH40N60SFD Package Packing Method Reel Size Tape Width TO-247 Electrical Characteristics of the IGBT Symbol Parameter Tube N/A Quantity N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES / ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA 4.0 5.0 6.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 μA, VCE = VGE IC = 40 A, VGE = 15 V - 2.3 2.9 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, TC = 125oC - 2.5 - V - 2110 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 200 - pF - 60 - pF Switching Characteristics td(on) Turn-On Delay Time - 25 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC - 115 - ns - 27 54 ns - 1.13 - mJ - 0.31 - mJ Ets Total Switching Loss - 1.44 - mJ td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 43 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.48 - mJ Ets Total Switching Loss - 1.62 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC VCE = 400 V, IC = 40 A, VGE = 15 V 2 - 30 - ns - 1.14 - mJ - 120 - nC - 14 - nC - 58 - nC www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF =20 A, diF/dt = 200 A/μs Qrr Diode Reverse Recovery Charge ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 Min. Typ. Max TC = 25oC - 1.95 2.6 TC = 125oC - 1.85 - TC = 25oC - 45 - - 140 - TC = 25oC - 75 - o - 375 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o o TC = 25 C 15V 80 20V 15V 100 Collector Current, IC [A] 100 Collector Current, IC [A] TC = 125 C 20V 12V 60 40 10V 80 60 10V 40 20 20 VGE = 8V VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 6.0 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] o Collector Current, IC [A] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 80 TC = 25 C 60 o TC = 125 C 40 20 TC = 25 C o TC = 125 C 80 40 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 6 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.5 80A 3.0 2.5 40A 2.0 IC = 20A 1.5 1.0 25 50 75 100 o Case Temperature, TC [ C] ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 8 10 12 Gate-Emitter Voltage,VGE [V] 13 Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 12V o TC = -40 C 16 12 8 4 40A 4 80A IC = 20A 0 125 Common Emitter 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 80A 4 IC = 20A 0 TC = 125 C 16 12 8 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 20 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ciss o Gate-Emitter Voltage, VGE [V] 4000 Capacitance [pF] 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 5000 o TC = 25 C 3000 Coss 2000 1000 Crss 0 0.1 TC = 25 C 12 Vcc = 100V 200V 300V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 Gate Charge, Qg [nC] 150 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100 10μs 10 100μs 100 Switching Time [ns] Collector Current, Ic [A] 80A 4 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C 0.01 10 1 10 100 Collector-Emitter Voltage, VCE [V] ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 1000 0 5 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 500 5500 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o 1000 o TC = 25 C Switching Time [ns] Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 125 C td(off) 100 tf TC = 125 C td(on) 10 20 10 0 10 20 30 40 50 40 Gate Resistance, RG [Ω] 80 Figure 16. Switching Loss vs. Gate Resistance 10 500 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V o IC = 40A TC = 25 C o o TC = 125 C TC = 25 C Switching Loss [mJ] Switching Time [ns] 60 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current td(off) 100 tf o TC = 125 C 1 Eoff 40 60 0 80 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 30 200 Common Emitter VGE = 15V, RG = 10Ω 100 o TC = 25 C Eon o TC = 125 C Collector Current, IC [A] 10 Eon 0.2 0.3 10 20 Switching Loss [mJ] tr 100 Eoff 1 10 Safe Operating Area 0.1 o VGE = 15V, TC = 125 C 1 20 30 40 50 60 70 1 80 ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 100 80 Reverse Current , IR [μA] Forward Current, IF [A] o o TJ = 125 C 10 o TJ = 25 C o TJ = 75 C o 1 TC = 25 C TJ = 125 C 10 o TJ = 75 C 1 0.1 o TJ = 25 C o TC = 75 C o TC = 125 C 0.01 50 0.2 0 1 2 3 Forward Voltage, VF [V] 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 100 60 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 200 400 Reverse Voltage, VR [V] 200A/μs 80 60 diF/dt = 100A/μs 40 50 diF/dt = 100A/μs 200A/μs 40 o TC = 25 C o TC = 25 C 30 20 5 10 20 30 Forward Current, IF [A] 5 40 10 20 30 Forward Current, IF [A] 40 Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.1.5 7 www.fairchildsemi.com FGH40N60SFD — 600 V, 40 A Field Stop IGBT Typical Performance Characteristics 4.82 E 4.58 15.87 E 15.37 A 3.65 E 3.51 0.254 M 12.81 E 6.85 6.61 B A M 5.58 E 5.34 5.20 4.96 B 3.65 3.51 1.35 0.51 13.08 MIN 20.82 E 20.32 3 3.93 E 3.69 16.25 E 15.75 1.60 1 3 2.66 2.42 5.56 0.71 0.51 2.66 2.29 1.35 1.17 11.12 0.254 M B A M NOTES: UNLESS OTHERWISE SPECIFIED. A. PACKAGE REFERENCE: JEDEC TO-247, ISSUE E, VARIATION AB, DATED JUNE, 2004. B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5 - 1994 E DOES NOT COMPLY JEDEC STANDARD VALUE F. DRAWING FILENAME: MKT-TO247A03_REV03 1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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