FGH40N60SMD

FGH40N60SMD 600 V, 40 A Field Stop IGBT Features General Description o Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. • Maximum Junction Temperature : TJ = 175 C • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40 A • High Input Impedance • Fast Switching: EOFF = 6.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage  20 V IC ICM (1) IF IFM (1) PD 25oC Collector Current @ TC = 80 A Collector Current @ TC = 100oC 40 A Pulsed Collector Current @ TC = 25oC 120 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current o 20 A 120 A @ TC = 100 C Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 349 W Maximum Power Dissipation @ TC = 100oC 174 W TJ Operating Junction Temperature -55 to +175 o C Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 1 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT April 2013 Symbol Parameter Typ. Max. Unit oC/W RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 RJC(Diode) Thermal Resistance, Junction to Case - 1.5 o RJA Thermal Resistance, Junction to Ambient - 40 oC/W C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGH40N60SMD FGH40N60SMD TO-247 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250A, VCE = VGE VGE = 0V, IC = 250A On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.5 6.0 V IC = 40A, VGE = 15V - 1.9 2.5 V IC = 40A, VGE = 15V, TC = 175oC - 2.1 - V - 1880 - pF VCE = 30V, VGE = 0V, f = 1MHz - 180 - pF - 50 - pF - 12 16 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 20 28 ns td(off) Turn-Off Delay Time - 92 120 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400V, IC = 40A, RG = 6, VGE = 15V, Inductive Load, TC = 25oC - 13 17 ns - 0.87 1.30 mJ Turn-Off Switching Loss - 0.26 0.34 mJ Total Switching Loss - 1.13 1.64 mJ td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 VCC = 400V, IC = 40A, RG = 6, VGE = 15V, Inductive Load, TC = 175oC 2 - 116 - ns - 16 - ns - 0.97 - mJ - 0.60 - mJ - 1.57 - mJ www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 Typ. Max Unit - 119 180 nC - 13 20 nC - 58 90 nC Min. Typ. Max Unit TC = 25°C unless otherwise noted Test Conditions o VFM Min. IF = 20A IF =20A, dIF/dt = 200A/s TC = 25 C - 2.3 2.8 TC = 175oC - 1.67 - TC = 175oC - 48.9 - TC = 25oC - 36 - TC = 175oC - 110 - TC = 25oC - 46.8 - o - 445 - TC = 175 C 3 V uJ ns nC www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 o TC = 25 C 20V 15V 120 12V o TC = 175 C 100 10V 80 60 VGE = 8V 40 12V 10V 80 60 VGE = 8V 40 20 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 120 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 175 C 80 TC = 25 C Collector Current, IC [A] 100 Collector Current, IC [A] 20V 15V 100 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 60 40 90 T = 175oC C 60 30 20 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 80A 2.0 40A 1.5 IC = 20A 1.0 25 FGH40N60SMD Rev. C0 12 4 Common Emitter o TC = -40 C 16 12 8 40A 80A 4 IC = 20A 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] ©2010 Fairchild Semiconductor Corporation 4 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 3.0 2.5 2 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 80A 4 IC = 20A 0 o TC = 175 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 40 80 Gate Charge, Qg [nC] Figure 12. Turn-on Characteristics vs. Gate Resistance 300 100 10s 100 tr 100s 1ms 10 ms 10 Switching Time [ns] Collector Current, Ic [A] 120 DC 1 *Notes: 0.1 o td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A 1. TC = 25 C o TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 o TC = 175 C 1 1000 0 5 10 20 30 40 Gate Resistance, RG [] 50 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6 o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) TC = 175 C 100 tr 10 td(on) o TC = 25 C o TC = 175 C 1 0 10 20 30 40 1 20 50 30 40 Gate Resistance, RG [] 50 60 70 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 5 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6 o Eon 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C TC = 25 C o o TC = 175 C 1 20 30 40 50 60 TC = 175 C 70 0.1 80 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [] 50 Figure 18. Turn off Switching SOA Characteristics 200 6 Collector Current, IC [A] Switching Loss [mJ] 100 Eon 1 Eoff Common Emitter VGE = 15V, RG = 6 o TC = 25 C 10 Safe Operating Area o o TC = 175 C 0.1 20 30 40 50 60 70 VGE = 15V, TC = 175 C 1 80 1 Collector Current, IC [A] ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequency 90 Square Wave 110 o TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 6 100 70 Collector Current, IC [A] Collector Current, IC [A] 120 Common Emitter VGE = 15V 80 60 50 40 30 20 90 80 o 70 Tc = 75 C 60 o Tc = 100 C 50 40 30 20 10 10 0 25 0 1k 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] Figure 21. Forward Characteristics 10k 100k Switching Frequency, f [Hz] Figure 22. Reverse Current 1000 100 o Reverse Currnet, ICES [A] 100 Forward Current, IF [A] 1M o TC = 175 C 10 o TC = 25 C TC = 175 C 10 o TC = 100 C 1 0.1 o 0.01 TC = 25 C o TC = 25 C o TC = 175 C 1E-3 1 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 0 3.0 Figure 23. Stored Charge 200 300 VR [V] 400 500 600 Figure 24. Reverse Recovery Time 700 200 o o TC = 25 C TC = 25 C 600 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 o TC = 175 C 500 400 300 di/dt = 200A/s 200 di/dt = 100A/s 100 o TC = 175 C 150 100 di/dt = 100A/s di/dt = 200A/s 50 0 0 0 5 10 15 20 25 30 35 Forwad Current, IF [A] ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 40 0 45 7 5 10 15 20 25 30 35 Forward Current, IF [A] 40 45 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N60SMD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 25.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 -5 10 -4 10 -3 -2 10 -1 10 0 10 10 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 3 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 t2 0.01 single pulse 0.01 -5 10 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 8 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT Mechanical Dimensions TO-247A03 ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. C0 10 www.fairchildsemi.com FGH40N60SMD 600 V, 40 A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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