FGH40N60SMDF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGH40N60SMDF 600 V、 40 A 场截止 IGBT 特性 应用 • 最大结温：TJ=175°C • 太阳能逆变器、 UPS、电焊机、 PFC、电信、 ESS • 正温度系数，易于并联运行 概述 • 高电流能力 • 低饱和电压：VCE(sat)=1.9 V （典型值） @ IC=40 A • 高输入阻抗 飞兆半导体的场截止第 2 代 IGBT 新系列采用新型场截止 IGBT 技术，为光伏逆变器、 UPS、焊机、通讯、 ESS 和 PFC 等低导 通和开关损耗至关重要的应用提供最佳性能。 • 快速开关 EOFF =6.5 μJ/A • 紧密的参数分布 • 符合 RoHS 标准 E C C G G 集电极 (FLANGE) E 绝对最大额定值 符号 说明 VCES 集电极 - 发射极之间电压 VGES 栅极－发射极间电压 IC 集电极电流 @ TC = 25°C 集电极电流 额定值 单位 600 V ± 20 V 80 A @ TC = 100°C 40 A ICM (1) 集电极脉冲电流 @ TC = 25°C 120 A PD 最大功耗 @ TC = 25°C 349 W 最大功耗 @ TC = 100°C 174 W TJ 工作结温 -55 至 +175 °C Tstg 存储温度范围 -55 至 +175 °C TL 用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒 300 °C 注意： 1：可重复的额定值：脉宽受最大结温限制 热性能 符号 RJC(IGBT) 参数 典型值 最大值 单位 结点 - 壳体的热阻 - 0.43 °C/W RJC（二极管） 结点 - 壳体的热阻 - 1.45 °C/W RJA - 40 °C/W 结至环境热阻 ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 1 www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 2013 年 12 月 器件编号 顶标 封装 包装方法 卷尺寸 带宽 数量 FGH40N60SMDF FGH40N60SMDF TO-247 塑料管 不适用 不适用 30 IGBT 的电气特性 TC = 25°C 除非另有说明 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVCES 集电极 - 发射极击穿电压 VGE = 0 V， IC = 250 A 600 - - V BVCES TJ 击穿温度系数电压 VGE = 0 V， IC = 250 A - 0.6 - V/°C ICES 集电极切断电流 VCE = VCES， VGE = 0 V - - 250 A IGES G-E 漏电流 VGE = VGES， VCE = 0 V - - ±400 nA G-E 阈值电压 IC = 250 A， VCE = VGE 导通特性 VGE(th) VCE(sat) 集电极 - 发射极间饱和电压 3.5 4.6 6.0 V IC = 40 A, VGE = 15 V - 1.9 2.5 V IC = 40 A， VGE = 15 V， TC = 150 °C - 2.1 - V - 1880 - pF VCE = 30 V， VGE = 0 V， f =1 MHz - 180 - pF 动态特性 Cies 输入电容 Coes 输出电容 Cres 反向传输电容 - 50 - pF td(on) 导通延迟时间 - 12 - ns 开关特性 tr 上升时间 - 20 - ns td(off) 关断延迟时间 - 92 - ns tf 下降时间 - 13 20 ns Eon 导通开关损耗 - 1.3 - mJ Eoff 关断开关损耗 - 0.26 - mJ Ets 总开关损耗 - 1.56 - mJ td(on) 导通延迟时间 - 12 - ns tr 上升时间 - 19 - ns td(off) 关断延迟时间 - 97 - ns tf 下降时间 - 14 21 ns Eon 导通开关损耗 - 2.09 - mJ Eoff 关断开关损耗 - 0.44 - mJ Ets 总开关损耗 - 2.53 - mJ Qg 总栅极电荷 - 119 - nC - 13 - nC - 58 - nC Qge 栅极－发射极间电荷 Qgc 栅极－发射极间电荷 ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 VCC = 400 V， IC = 40 A， RG = 6 ， VGE = 15 V， 感性负载， TC = 25°C VCC = 400 V， IC = 40 A， RG=6 ， VGE = 15 V， 感性负载， TC = 150°C VCE = 400 V， IC = 40 A， VGE = 15 V 2 www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 封装标识与定购信息 符号 参数 VFM 二极管正向电压 trr 二极管反向恢复时间 Qrr 二极管反向恢复电荷 测试条件 IF = 20 A IF = 20 A， diF/dt = 200 A/s ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 3 最小值 典型值 TC = 25°C - 1.3 TC = 150°C - 1.2 TC = 25°C - 70 TC = 150°C - 126 TC = 25°C - 207 TC = 150°C - 638 最大值 1.7 90 290 单位 V ns nC www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 二极管电气特性 TC = 25°C 除非另有说明 图 1. 典型输出特性 20V 15V o TC = 25 C Collector Current, IC [A] 图 2. 典型输出特性 120 12V o TC = 150 C 10V Collector Current, IC [A] 120 90 60 VGE = 8V 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] VGE = 8V 30 0 6 120 Common Emitter VCE = 20V o Collector Current, IC [A] o Collector Current, IC [A] 2 4 Collector-Emitter Voltage, VCE [V] 图 4. 传输特性 Common Emitter VGE = 15V TC = 25 C 90 o TC = 150 C 60 30 TC = 25 C 90 T = 150oC C 60 30 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 图 5. 饱和电压与壳温的关系 （在可变电流强度下） Collector-Emitter Voltage, VCE [V] 80A 2.0 40A 1.5 IC = 20A 1.0 25 FGH40N60SMDF 修订版 C1 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 150 4 Common Emitter o TC = -40 C 16 12 8 40A 80A 4 IC = 20A 0 50 75 100 125 o Case Temperature, TC [ C] ©2013 飞兆半导体公司 2 20 Common Emitter VGE = 15V 2.5 0 图 6. 饱和电压与 VGE 的关系 3.0 Collector-Emitter Voltage, VCE [V] 10V 60 0 120 0 12V 90 6 图 3. 典型饱和电压特性 20V 15V 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 典型性能特征 图 7. 饱和电压与 VGE 的关系 20 20 Common Emitter Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 图 8. 饱和电压与 VGE 的关系 TC = 25 C 16 12 8 40A 80A 4 IC = 20A 0 o TC = 150 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 图 9. 电容特性 8 12 16 Gate-Emitter Voltage, VGE [V] 20 图 10. 栅极电荷特性 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 12 VCC = 100V 200V 9 300V 6 3 Cres 0 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 30 图 11. SOA 特性 40 80 Gate Charge, Qg [nC] 120 图 12. 开启特性与栅极阻抗 300 100 100 10s tr 100s 1ms 10 ms DC 10 Switching Time [ns] Collector Current, Ic [A] 0 1 *Notes: 0.1 o td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A 1. TC = 25 C o TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 o TC = 150 C 1 1000 0 10 20 30 40 50 Gate Resistance, RG [] 5 www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 典型性能特征 图 13. 关断特性与栅极电阻的关系 图 14. 开启特性与集电极电流的关系 1000 1000 Common Emitter VGE = 15V, RG = 6 o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) 100 TC = 150 C tr 10 td(on) o TC = 25 C o TC = 150 C 1 0 10 20 30 Gate Resistance, RG [] 40 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] 图 15. 关断特性与集电极电流的关系 图 16. 开关损耗与栅极电阻 5 1000 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 25 C o TC = 150 C o TC = 150 C 1 20 0.1 30 40 50 60 70 80 0 10 20 30 40 50 Gate Resistance, RG [ ] Collector Current, IC [A] 图 17. 开关损耗与集电极电流 图 18. 关断开关 SOA 特性 6 200 100 Collector Current, IC [A] Switching Loss [mJ] Eon 1 Eoff Common Emitter VGE = 15V, RG = 6 o TC = 25 C 10 Safe Operating Area o o TC = 150 C 0.1 20 30 40 50 60 70 VGE = 15V, TC = 150 C 1 80 1 Collector Current, IC [A] ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 典型性能特征 FGH40N60SMDF —600 V、 40 A 场截止 IGBT 典型性能特征 图 19. 正向特性 图 20. 反向电流 1000 100 o TC = 150 C Reverse Currnet, IR [A] Forward Current, IF [A] 100 o TC = 150 C o TC = 75 C 10 o TC = 25 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C 0.01 o TC = 75 C ---o TC = 150 C 1 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 1E-3 2.5 0 图 21. 存储电荷 200 300 400 Reverse Voltage, VR [V] 500 600 图 22. 反向恢复时间 350 120 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 300 250 200A/s 200 150 100 diF/dt = 100A/s 50 0 5 10 15 20 25 30 Forwad Current, IF [A] 35 100 diF/dt = 100A/s 80 200A/s 60 40 40 5 10 15 20 25 30 35 40 Forward Current, IF [A] 图 23. IGBT 的瞬态热阻 Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 PDM 0.05 0.02 0.01 single pulse 0.006 0.00001 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 7 www.fairchildsemi.com FGH40N60SMDF —600 V、 40 A 场截止 IGBT 机械尺寸 图 24. TO-247 3L - TO-247，模塑， 3 引脚， JEDEC 变体 AB 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司 产品保修的部分。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸： http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2013 飞兆半导体公司 FGH40N60SMDF 修订版 C1 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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