IGBT - Field Stop
600 V, 40 A
FGH40N60UFD
Description
Using novel Field Stop IGBT technology, ON Semiconductor’s
field stop IGBTs offer the optimum performance for solar inverter,
UPS, welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
Features
•
•
•
•
•
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
High Input Impedance
Fast Switching
This Device is Pb−Free and is RoHS Compliant
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VCES
IC
600 V
40 A
C
G
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS
E
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
UFD
$Y
&Z
&3
&K
FGH40N60UFD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
January, 2020 − Rev. 2
1
Publication Order Number:
FGH40N60UFD/D
FGH40N60UFD
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Unit
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
±20
V
Transient Gate−to−Emitter Voltage
±30
V
TC = 25°C
80
A
TC = 100°C
40
A
Pulsed Collector Current
TC = 25°C
120
A
Maximum Power Dissipation
TC = 25°C
290
W
TC = 100°C
116
W
Operating Junction Temperature
−55 to +150
°C
Storage Temperature Range
−55 to +150
°C
300
°C
IC
ICM (Note 1)
PD
TJ
TSTG
TL
Description
Collector Current
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
Typ.
Max.
Unit
RqJC (IGBT)
Thermal Resistance, Junction to Case
−
0.43
_C/W
RqJC (Diode)
Thermal Resistance, Junction to Case
−
1.45
_C/W
Thermal Resistance, Junction to Ambient
−
40
_C/W
RqJA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing
Method
Reel Size
Tape Width
Qty per Tube
FGH40N60UFDTU
FGH40N60UFD
TO−247
Tube
N/A
N/A
30
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2
FGH40N60UFD
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VGE = 0 V, IC = 250 mA
600
−
−
V
VGE = 0 V, IC = 250 mA
−
0.6
−
V/°C
OFF CHARACTERISTICS
BVCES
Collector to Emitter Breakdown Voltage
DBVCES / DTJ Temperature Coefficient of Breakdown Voltage
ICES
Collector Cut−Off Current
VCE = VCES, VGE = 0 V
−
−
250
mA
IGES
G−E Leakage Current
VGE = VGES, VCE = 0 V
−
−
±400
nA
4.0
5.0
6.5
V
ON CHARACTERISTICS
VGE(th)
G−E Threshold Voltage
IC = 250 mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
−
1.8
2.4
V
IC = 40 A, VGE = 15 V,
TC = 125°C
−
2.0
−
V
VCE = 30 V, VGE = 0 V,
f = 1 MHz
−
2110
−
pF
−
200
−
pF
−
60
−
pF
−
24
−
ns
−
44
−
ns
Turn−Off Delay Time
−
112
−
ns
Fall Time
−
30
60
ns
Eon
Turn−On Switching Loss
−
1.19
−
mJ
Eoff
Turn−Off Switching Loss
−
0.46
−
mJ
Ets
Total Switching Loss
−
1.65
−
mJ
Td(on)
Turn−On Delay Time
−
24
−
ns
DYNAMIC CHARACTERISTICS
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Td(on)
Tr
Td(off)
Tf
Tr
Turn−On Delay Time
Rise Time
VCC = 400 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 125°C
−
45
−
ns
Turn−Off Delay Time
−
120
−
ns
Fall Time
−
40
−
ns
Eon
Turn−On Switching Loss
−
1.2
−
mJ
Eoff
Turn−Off Switching Loss
−
0.69
−
mJ
Ets
Total Switching Loss
−
1.89
−
mJ
Qg
Total Gate Charge
−
120
−
nC
Qge
Gate to Emitter Charge
−
14
−
nC
Qgc
Gate to Collector Charge
−
58
−
nC
Td(off)
Tf
Rise Time
VCC = 400 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
VCE = 400 V, IC = 40 A,
VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40N60UFD
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Symbol
VFM
Trr
Qrr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Test Conditions
IF = 20 A
IF = 20 A,
diF/dt = 200 A/ms
Diode Reverse Recovery Charge
Min
Typ
Max
Unit
TC = 25°C
−
1.95
2.6
V
TC = 125°C
−
1.85
−
TC = 25°C
−
45
−
TC = 125°C
−
140
−
TC = 25°C
−
75
−
TC = 125°C
−
375
−
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGH40N60UFD
Collector Current, IC (A)
Collector Current, IC (A)
TYPICAL PERFORMANCE CHARACTERISTICS
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Figure 1. Typical Output Characteristics
Collector Current, IC (A)
Collector Current, IC (A)
Figure 2. Typical Output Characteristics
Collector−Emitter Voltage, VCE (V)
Gate−Emitter Voltage,VGE (V)
Figure 3. Typical Saturation
Voltage Characteristics
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Figure 4. Transfer Characteristics
Gate−Emitter Voltage, VGE (V)
Case Temperature TC (5C)
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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5
FGH40N60UFD
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gate−Emitter Voltage, VGE (V)
Gate−Emitter Voltage, VGE(V)
Figure 8. Saturation Voltage vs VGE
Capacitance (pF)
Gate−Emitter Voltage, VGE (V)
Figure 7. Saturation Voltage vs VGE
Collector−Emitter Voltage, VCE (V)
Gate Charge, Qg(nC)
Figure 10. Gate Charge Characteristics
Switching Time (ns)
Collector Current, IC (A)
Figure 9. Capacitance Characteristics
Collector−Emitter Voltage, VCE (V)
Gate Resistance, RG (W)
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics
vs. Gate Resistance
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6
FGH40N60UFD
Switching Time (ns)
Switching Time (ns)
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gate Resistance, RG (W)
Collector Current, IC (A)
Figure 14. Turn−on Characteristics
vs. Collector Current
Switching Loss (mJ)
Switching Time (ns)
Figure 13. Turn−off Characteristics
vs. Gate Resistance
Collector Current, IC (A)
Gate Resistance, RG (W)
Figure 16. Switching Loss vs.
Gate Resistance
Switching Loss (mJ)
Collector Current, IC (A)
Figure 15. Turn−off Characteristics vs.
Collector Current
Collector Current, IC (A)
Collector−Emitter Voltage, VCE (V)
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn Off Switching SOA Characteristics
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7
FGH40N60UFD
Forward Current, IF (A)
Reverse Current, IR (mA)
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Forward Voltage, VF (V)
Reverse Voltage, VR (V)
Figure 20. Reverse Current
Stored Recovery Charge, Qrr (nC)
Reverse Recovery Time, trr (ns)
Figure 19. Forward Characteristics
Forward Current, IF (A)
Forward Current, IF (A)
Figure 22. Reverse Recovery Time
Thermal Response (Zthjc)
Figure 21. Stored Charge
PDM
t1
t2
Rectangular Pulse Duration (sec)
Figure 23. Transient Thermal Impedance of IGBT
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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rights of others.
© Semiconductor Components Industries, LLC, 2018
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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