600 V, 40 A Field Stop IGBT
General Description
Using novel field stop IGBT technology, ON Semicondcutor’s
field stop IGBTs offer the optimum performance for solar
inverter, UPS, welder and PFC applications where low
conduction and switch-ing losses are essential.
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Ratings
Unit
Collector to Emitter Voltage
600
V
Gate to Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
Symbol
VCES
VGES
IC
ICM (1)
PD
Description
V
Collector Current
@ TC = 25oC
80
A
Collector Current
@ TC = 100oC
40
A
Pulsed Collector Current
@ TC = 25oC
120
A
o
Maximum Power Dissipation
@ TC = 25 C
290
W
Maximum Power Dissipation
@ TC = 100oC
116
W
TJ
Operating Junction Temperature
-55 to +150
o
C
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Typ.
Max.
-
0.43
o
C/W
40
o
C/W
-
1
Unit
Publication Order Number:
FGH40N60UF/D
FGH40N60UF — 600 V, 40 A Field Stop IGBT
FGH40N60UF
Part Number
Top Mark
FGH40N60UFTU
FGH40N60UF
Package Packing Method
TO-247
Parameter
Tape Width
Quantity
N/A
N/A
30
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
ΔBVCES /
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 μA
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 250 μA, VCE = VGE
4.0
5.0
6.5
V
IC = 40 A, VGE = 15 V
-
1.8
2.4
V
IC = 40 A, VGE = 15 V,
TC = 125oC
-
2.0
-
V
-
2110
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
200
-
pF
-
60
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
44
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
-
112
-
ns
-
30
60
ns
-
1.19
-
mJ
-
0.46
-
mJ
Ets
Total Switching Loss
-
1.65
-
mJ
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
45
-
ns
td(off)
Turn-Off Delay Time
-
120
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.69
-
mJ
Ets
Total Switching Loss
-
1.89
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 40 A,
VGE = 15 V
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2
-
40
-
ns
-
1.2
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
20V
15V
TC = 125 C
12V
15V
20V
100
Collector Current, IC [A]
100
Collector Current, IC [A]
o
o
TC = 25 C
80
60
10V
40
12V
80
60
10V
40
20
20
VGE = 8V
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
6.0
Figure 4. Transfer Characteristics
120
120
Common Emitter
VGE = 15V
100
o
TC = 125 C
80
Common Emitter
VCE = 20V
100
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
60
40
20
o
TC = 25 C
o
TC = 125 C
80
60
40
20
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
0
4
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
6
7
8
9
10
11
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
Common Emitter
VGE = 15V
3.0
20
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3.5
80A
2.5
2.0
1.5
1.0
25
40A
IC = 20A
50
75
100
o
Case Temperature, TC [ C]
125
Common Emitter
o
TC = - 40 C
16
12
8
40A
4
80A
IC = 20A
0
4
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3
8
12
16
Gate-Emitter Voltage, VGE [V]
20
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
80A
40A
4
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
8
40A
IC = 20A
0
20
4
Figure 9. Capacitance Characteristics
20
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Ciss
o
Gate-Emitter Voltage, VGE [V]
4000
Capacitance [pF]
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
5000
o
TC = 25 C
3000
Coss
2000
1000
Crss
0
0.1
TC = 25 C
12
Vcc = 100V
200V
300V
9
6
3
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
Gate Charge, Qg [nC]
150
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
200
100
10μs
100
Switching Time [ns]
Collector Current, Ic [A]
80A
4
100μs
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 125 C
10
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
0
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4
10
20
30
40
Gate Resistance, RG [Ω]
50
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
5500
500
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
o
o
TC = 25 C
1000
Switching Time [ns]
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 125 C
td(off)
100
tf
TC = 125 C
10
20
30
40
td(on)
10
20
10
0
50
40
Gate Resistance, RG [Ω]
80
Figure 16. Switching Loss vs. Gate Resistance
10
600
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 400V, VGE = 15V
o
IC = 40A
TC = 25 C
o
o
TC = 125 C
td(off)
100
tf
10
20
40
60
TC = 25 C
Switching Loss [mJ]
Switching Time [ns]
60
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
o
TC = 125 C
Eon
Eoff
1
0.3
0
80
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
20
30
40
Gate Resistance, RG [Ω]
50
Figure 18. Turn off Switching
SOA Characteristics
10
200
Common Emitter
VGE = 15V, RG = 10Ω
100
Collector Current, IC [A]
Eon
o
TC = 25 C
Switching Loss [mJ]
tr
100
o
TC = 125 C
Eoff
1
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
0.1
20
1
40
60
80
1
10
100
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
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5
1000
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 19.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
Rectangular Pulse Duration [sec]
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6
0.1
1
FGH40N60UF — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
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