FGH4L40T120LQD

DATA SHEET www.onsemi.com IGBT - Ultra Field Stop 1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L FGH4L40T120LQD This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free−wheeling diode with a low forward voltage. TO−247−4LD CASE 340CJ MARKING DIAGRAM Features • • • • Extremely Efficient Trench with Field Stop Technology Maximum Junction Temperature: TJ = 175°C Fast and Soft Reverse Recovery Diode Optimized for Low VCE(Sat) FGH40T 120LQD $Y&Z&3&K FGH40T120LQD = Specific Device Code $Y = onsemi Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code Typical Applications • Solar Inverter and UPS • Industrial Switching • Welding MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCE 1200 V Gate−Emitter Voltage Transient Gate−Emitter Voltage VGE ±20 ±30 V IC 80 40 A Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Collector Current @ TC = 25°C (Note 1) @ TC = 100°C Diode Forward Current @ TC = 25°C (Note 1) @ TC = 100°C IF Maximum Power Dissipation PD @ TC = 25°C @ TC = 100°C Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) PIN CONNECTIONS C E1: Kelvin Emitter E2: Power Emitter G E1 E2 A 80 40 W 306 153 ORDERING INFORMATION Device TJ, TSTG −55 to +175 °C TL 260 °C FGH4L40T120LQD Package Shipping TO−247 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 600 V, VGE = 15 V, IC = 160 A, RG = 15 W, Inductive Load, 100% Tested 3. Repetitive rating: Pulse width limited by max. junction temperature © Semiconductor Components Industries, LLC, 2021 September, 2021 − Rev. 0 1 Publication Order Number: FGH4L40T120LQD/D FGH4L40T120LQD THERMAL CHARACTERISTICS Rating Symbol Min Typ Max Unit Thermal resistance junction−to−case, for IGBT RqJC − 0.38 0.49 °C/W Thermal resistance junction−to−case, for Diode RqJC − 0.64 0.84 °C/W Thermal resistance junction−to−ambient RqJA − − 40 °C/W Test Conditions Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES 1200 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES/ DTJ − 1.3 − V/°C VGE = 0 V, VCE = 1200 V ICES − − − 500 40 − mA VGE = 20 V, VCE = 0 V IGES − − 200 nA VGE = VCE, IC = 40 mA VGE(th) 5.5 6.5 7.5 V VGE = 15 V, IC = 40 A, TJ = 25°C VCE(sat) − 1.55 1.80 V − 2 − ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTIC Collector−Emitter Cut−Off Current Gate Leakage Current ON CHARACTERISTIC Gate−Emitter Threshold Voltage Collector−Emitter Saturation Voltage VGE = 15 V, IC = 40 A, TJ = 175°C DYNAMIC CHARACTERISTIC Input Capacitance Cies − 5079 − Output Capacitance Coes − 113 − Cres − 62 − Qg − 227 − Qge − 40 − Qgc − 108 − td(on) − 38 − tr − 13 − td(off) − 227 − tf − 51 − Eon − 0.63 − Turn−off Switching Loss Eoff − 0.77 − Total Switching Loss Ets − 1.40 − Turn−on Delay Time td(on) − 42 − tr − 19 − td(off) − 218 − tf − 80 − Eon − 1.04 − Turn−off Switching Loss Eoff − 1.35 − Total Switching Loss Ets − 2.39 − VCE = 30 V, VGE = 0 V, f = 1 MHz Reverse Transfer Capacitance Gate Charge Total Gate−to−Emitter Charge VCC = 600 V, IC = 40 A, VGE = 15 V Gate−to−Collector Charge pF nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss TJ = 25°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 15 V Inductive Load Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V Inductive Load www.onsemi.com 2 ns mJ ns mJ FGH4L40T120LQD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 32 − ns tr − 12 − td(off) − 264 − tf − 156 − Eon − 1.05 − Turn−off Switching Loss Eoff − 1.62 − Total Switching Loss Ets − 2.67 − Turn−on Delay Time td(on) − 36 − tr − 20 − td(off) − 236 − tf − 204 − Eon − 1.62 − Turn−off Switching Loss Eoff − 2.51 − Total Switching Loss Ets − 4.13 − VF − 3.31 3.80 − 2.97 − EREC − 126 − mJ Trr − 59 − ns Qrr − 804 − nC EREC − 540 − mJ SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss TJ = 175°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 15 V Inductive Load Rise Time Turn−off Delay Time Fall Time Turn−on Switching Loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V Inductive Load mJ ns mJ DIODE CHARACTERISTIC Forward Voltage VGE = 0 V, IF = 40 A, TJ = 25°C VGE = 0 V, IF = 40 A, TJ = 175°C Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge TJ = 25°C IF = 40 A, VR = 600 V diF/dt = 1000 A/ms TJ = 175°C IF = 20 A, VR = 600 V diF/dt = 1000 A/ms TJ = 175°C IF = 40 A, VR = 600 V diF/dt = 1000 A/ms V Trr − 115 − ns Qrr − 2090 − nC EREC − 667 − mJ Trr − 127 − ns Qrr − 2613 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH4L40T120LQD TYPICAL CHARACTERISTICS 15 V 120 10 V 80 40 VGE = 8 V 0 0 1 2 3 4 3.0 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 175°C 2 3 4 5 6 0 1 2 3 4 5 Common Emitter VCE = 20 V 60 40 20 TJ = 175°C 0 7 0 2 4 6 TJ = 25°C 8 10 14 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE EMITTER VOLTAGE (V) Figure 3. Typical Saturation Voltage Characteristics Figure 4. Typical Transfer Characteristics 100K Common Emitter VGE = 15 V 2.5 IC = 40 A 2.0 IC = 25 A 1.5 0 50 100 1K Coss 100 Crss 10 Common Emitter f = 1 MHz VGE = 0 V 1 IC = 20 A −50 Ciss 10K IC = 80 A 1.0 −100 VGE = 8 V 80 40 3.5 40 Figure 2. Typical Output Characteristics (TJ = 1755C) TJ = 25°C 0 10 V 80 Figure 1. Typical Output Characteristics (TJ = 255C) 80 0 12 V VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 15 V 120 15 V 120 0 5 20 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 160 12 V IC, COLLECTOR CURRENT (A) 20 V CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 160 150 0.1 200 0.1 1 10 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 5. Saturation Voltage vs. Junction Temperature Figure 6. Capacitances Characteristics www.onsemi.com 4 30 FGH4L40T120LQD TYPICAL CHARACTERISTICS 300 VCC = 400 V IC, COLLECTOR CURRENT (A) VGE, GATE−EMITTER VOLTAGE (V) 15 VCC = 500 V 12 VCC = 600 V 9 6 3 0 Common Emitter IC = 40 A 0 50 100 150 200 1 TC = 25°C Single Pulse TJ = 175°C 1 DC 10 100 1000 Figure 7. Gate Charge Characteristics Figure 8. SOA Characteristics (FBSOA) 1000 td(on) 100 tr 0 td(off) TJ = 25°C TJ = 175°C SWITCHING TIME (ns) SWITCHING TIME (ns) 1 ms 10 ms VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 20 30 40 tf 100 VCC = 600 V VGE = 15 V IC = 40 A 10 50 0 10 20 30 40 50 RG, GATE RESISTANCE (W) Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance 500 100 TJ = 25°C TJ = 175°C RG, GATE RESISTANCE (W) 200 td(off) td(on) 10 tr SWITCHING TIME (ns) SWITCHING TIME (ns) 100 ms 10 Qg, GATE CHARGE (nC) VCC = 600 V VGE = 15 V IC = 40 A 1 10 ms 0.1 250 1000 10 100 VCC = 600 V VGE = 15 V RG = 10 W TJ = 25°C TJ = 175°C 0 10 20 30 40 50 60 70 80 100 VCC = 600 V VGE = 15 V RG = 10 W 10 90 tf TJ = 25°C TJ = 175°C 0 10 20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Turn−on Characteristics vs. Collector Current Figure 12. Turn−off Characteristics vs. Collector Current www.onsemi.com 5 90 FGH4L40T120LQD TYPICAL CHARACTERISTICS 10 VCC = 600 V VGE = 15 V IC = 40 A 5 SWITCHING LOSS (mJ) SWITCHING LOSS (mJ) 10 Eoff Eon 0.5 10 20 30 40 0.1 50 0 10 20 30 40 50 60 70 80 Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector Current Irr, REVERSE RECOVERY CURRENT (A) 40 TJ = 175°C TJ = 25°C 20 0 1 2 3 4 40 di/dt 1000 A/ms 30 di/dt 500 A/ms 20 10 0 TJ = 25°C TJ = 175°C 0 10 20 30 40 50 60 70 80 IF, FORWARD CURRENT (A) Figure 15. (Diode) Forward Characteristics Figure 16. (Diode) Reverse Recover Current vs. Forward Current 200 90 50 VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) TJ = 25°C TJ = 175°C IC, COLLECTOR CURRENT (A) 60 90 4000 di/dt 1000 A/ms 150 TJ = 25°C TJ = 175°C 3000 di/dt 500 A/ms 100 di/dt 1000 A/ms 2000 50 di/dt 500 A/ms 1000 TJ = 25°C TJ = 175°C 0 Eon RG, GATE RESISTANCE (W) 80 0 Eoff 1 TJ = 25°C TJ = 175°C 0 VCC = 600 V VGE = 15 V IC = 40 A RG = 10 W 0 10 20 30 40 50 60 70 80 90 0 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) Figure 17. (Diode) Reverse Recovery Time Figure 18. (Diode) Stored Charge www.onsemi.com 6 80 90 FGH4L40T120LQD TYPICAL CHARACTERISTICS ZqJC, THERMAL RESPONSE (K/W) 1 0.5 Duty Cycle 0.1 0.2 0.1 0.05 0.02 t1 t2 0.01 0.01 C1 = t1 / R1 Single Pulse 0.001 10−5 Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC + TC R1 R2 PDM C2 = t2 / R2 i: 1 2 3 4 ri [K/W]: 0.01438 0.08956 0.07977 0.09921 T [s]: 1.452E−05 2.162E−04 6.944E−04 3.525E−03 10−4 10−3 10−2 10−1 100 101 RECTANGULAR PULSE DURATION (sec) Figure 19. Transient Thermal Impedance of IGBT ZqJC, THERMAL RESPONSE (K/W) 1 0.5 Duty Cycle 0.2 0.1 0.1 0.05 0.02 t1 t2 C1 = t1 / R1 0.01 10−5 C2 = t2 / R2 i: 1 2 3 4 ri [K/W]: 0.0291 0.0619 0.1610 0.1572 T [s]: 4.272E−06 5.358E−05 3.408E−04 2.119E−03 Single Pulse 0.01 Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC + TC R1 R2 PDM 10−4 10−3 10−2 10−1 RECTANGULAR PULSE DURATION (sec) Figure 20. Transient Thermal Impedance of Diode www.onsemi.com 7 100 101 FGH4L40T120LQD Figure 21. Test Circuits for Switching Characteristics Figure 22. Definition of Turn−On Waveforms www.onsemi.com 8 FGH4L40T120LQD Figure 23. Definition of Turn−Off Waveforms www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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