IGBT - SMPS
300 V
FGH50N3
Description
Using ON Semiconductor’s planar technology, this IGBT is ideal
for many high voltage switching applications operating at high
frequencies where low conduction losses are essential. This device has
been optimized for medium frequency switch mode power supplies.
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Features
•
•
•
•
•
•
C
Low Saturation Voltage: VCE(sat) = 1.4 V Max
Low EOFF = 6.6 uJ/A
SCWT = 8 s @ = 125°C
300 V Switching SOA Capability
Positive Temperature Coefficient above 50 A
This is a Pb−Free Device
G
E
Applications
• SMPS
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH50N3
$Y
&Z
&3
&K
FGH50N3
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
February, 2020 − Rev. 3
1
Publication Order Number:
FGH50N3/D
FGH50N3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous
TC = 25°C
Symbol
Ratings
Unit
BVCES
300
V
IC
75
A
75
A
TC = 110°C
Collector Current Pulsed (Note 1)
ICM
240
A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, Figure 2
SSOA
150 A at 300 V
Single Pulse Avalanche Energy, ICE = 30 A, L = 1.78 mH, VDD = 50 V
EAS
800
mJ
Single Pulse Reverse Avalanche Energy, IEC = 30 A, L = 1.78 mH, VDD = 50 V
EARV
800
mJ
PD
463
W
3.7
W/°C
TJ
−55 to +150
°C
TSTG
−55 to +150
°C
tSC
8
s
Power Dissipation Total
TC = 25°C
Power Dissipation Derating
TC > 25°C
Operating Junction Temperature Range
Storage Temperature Range Range
Short Circuit Withstand Time (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 180 V, TJ = 125°C, VGE = 12 Vdc, RG = 5
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tape Width
Quantity
FGH50N3
FGH50N3
TO−247
N/A
30
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−Case
Symbol
RJC
Test Conditions
TO−247
Min
Typ
Max
Unit
−
−
0.27
°C/W
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF STATE CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BVCES
ICE = 250 A, VGE = 0 V,
300
−
−
V
Emitter to Collector Breakdown Voltage
BVECS
IEC = 10 mA, VGE = 0 V
15
−
−
V
TJ = 25°C
−
−
250
A
TJ = 125°C
−
−
2.0
mA
−
−
±250
nA
TJ = 25°C
−
1.30
1.4
V
TJ = 125°C
−
1.25
1.4
V
VGE = 15 V
−
180
−
nC
VGE = 20 V
−
228
−
nC
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
ICES
IGES
VCE = 300 V
VGE = ±20 V
ON STATE CHARACTERISTICs
Collector to Emitter Saturation Voltage
VCE(SAT)
ICE = 30 A, VGE = 15 V
DYNAMIC CHARACTERISTICS
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
QG(ON)
ICE = 30 A, VCE = 150 V
VGE(TH)
ICE = 250 A, VCE= VGE
4.0
4.8
5.5
V
VGEP
ICE = 30 A, VCE = 150 V
−
7.0
−
V
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2
FGH50N3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
150
−
−
A
−
20
−
ns
−
15
−
ns
−
135
−
ns
−
12
−
ns
−
130
−
J
−
92
120
J
−
19
−
ns
−
13
−
ns
−
155
190
ns
−
7
15
ns
−
225
270
J
−
135
200
J
SWITCHING CHARACTERISTICS
Switching SOA
SSOA
TJ = 150°C, RG = 5 VGE = 15 V,
L = 25 H, VCE = 300 V
Current Turn−On Delay Time
td(ON)I
IGBT and Diode at TJ = 25°C,
ICE = 30 A,
VCE = 180 V,
VGE = 15 V,
RG = 5 ,
L = 100 H,
Test Circuit − Figure 20
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
Turn−On Energy (Note 3)
EON2
Turn−Off Energy Loss (Note 4)
EOFF
Current Turn−On Delay Time
td(ON)I
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
Turn−On Energy (Note 3)
EON2
Turn−Off Energy (Note 4)
EOFF
IGBT and Diode at TJ = 125°C,
ICE = 30 A,
VCE = 180 V,
VGE = 15 V,
RG = 5 ,
L = 100 H,
Test Circuit − Figure 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. EON2 is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 20.
4. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
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3
FGH50N3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
175
VGE = 15 V
ICE, Collector to Emitter Current (A)
ICE, DC Collector Current (A)
200
160
120
80
Package Limited
40
0
50
25
75
100
125
TJ = 150°C, RG = 5 , VGE = 15 V, L = 25 H
150
125
100
75
50
25
0
150
0
TC, Case Temperature (°C)
tsc, Short Circuit Withstand Time (s)
fMAX, Operating Frequency (kHz)
VGE = 15 V
200
VGE = 10 V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = Conduction Dissipation
(Duty Factor = 50%)
RJC = 0.27°C/W, See Notes
60
10
20
2
30
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
TJ = 150°C
10
TJ = 125°C
1.0
1.25
1.5
1.75
600
500
10
400
5
300
60
TJ = 25°C
0.75
tsc
0
9
10
11
12
13
14
15
200
16
VGE, Gate to Emitter Voltage (V)
30
0.5
700
Isc
Figure 4. Short Circuit Withstand Time
40
0
0.25
800
15
200
Duty Cycle < 0.5%, VGE = 10 V
Pulse Duration = 250 s
20
350
VCE = 180 V, RG = 5 , TJ = 125°C
20
ICE, Collector to Emitter Current (A)
50
300
250
25
Figure 3. Operating Frequency vs. Collector
to Emitter Current
60
200
Figure 2. Minimum Switching Safe Operating
Area
TJ = 125°C, RG = 5 ,
L = 100 H, VCE = 180 V, TC = 75°C
300
150
50
Duty Cycle < 0.5%, VGE = 15 V
Pulse Duration = 250 s
40
30
TJ = 25°C
20
TJ = 150°C
10
0
0.25
2.0
VCE, Collector to Emitter Voltage (V)
TJ = 125°C
0.5
0.75
1.0
1.25
1.5
1.75
VCE, Collector to Emitter Voltage (V)
Figure 5. Collector to Emitter On−State
Voltage
Figure 6. Collector to Emitter On−State
Voltage
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4
Isc, Peak Short Circuit Current (A)
400
100
VCE, Collector to Emitter Voltage (V)
Figure 1. DC Collector Current vs. Case
Temperature
500
50
FGH50N3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued)
400
RG = 5 , L = 100 H, VCE = 180 V
1.2
EOFF, Turn−Off Energy Loss (J)
EON2, Turn−On Energy Loss (mJ)
1.4
TJ = 25°C, TJ = 125°C, VGE = 10 V
1.0
0.8
0.6
0.4
0.2
0
TJ = 25°C
0
TJ = 125°C, VGE = 15 V
10
20
30
40
50
60
ICE, Collector to Emitter Current (A)
trI, Rise Time (ns)
td(ON)I, Turn−On Delay Time (ns)
150
100
50
0
TJ = 25°C, VGE = 10 V, VGE = 15 V
60
10
20
30
40
50
ICE, Collector to Emitter Current (A)
RG = 5 , L = 100 H, VCE = 180 V
80
TJ = 25°C, TJ = 125°C, VGE = 10 V
20
TJ = 25°C, TJ = 125°C, VGE = 10 V
60
40
20
TJ = 25°C, TJ = 125°C, VGE = 15 V
0
10
20
30
40
50
ICE, Collector to Emitter Current (A)
0
60
170
24
RG = 5 , L = 100 H, VCE = 180 V
160
TJ = 25°C, TJ = 125°C, VGE = 15 V
0
10
20
30
40
50
ICE, Collector to Emitter Current (A)
60
Figure 10. Turn−On Rise Time vs. Collector
to Emitter Current
Figure 9. Turn−On Delay Time vs. Collector
to Emitter Current
RG = 5 , L = 100 H, VCE = 180 V
20
150
tfI, Fall Time (ns)
td(OFF), Turn−Off Delay Time (ns)
200
100
RG = 5 , L = 100 H, VCE = 180 V
25
TJ = 25°C, TJ = 125°C, VGE = 15 V
140
130
120
TJ = 25°C, VGE = 10 V, 15 V
16
12
8
4
110
100
250
Figure 8. Turn−Off Energy Loss vs. Collector
to Emitter Current
30
15
TJ = 125°C, VGE = 10 V, VGE = 15 V
300
0
Figure 7. Turn−On Energy Loss vs. Collector
to Emitter Current
35
RG = 5 , L = 100 H, VCE = 180 V
350
TJ = 25°C, TJ = 125°C, VGE = 10 V
0
10
20
30
40
50
0
60
ICE, Collector to Emitter Current (A)
TJ = 125°C, VGE = 10 V, 15 V
0
10
20
30
40
50
60
ICE, Collector to Emitter Current (A)
Figure 12. Fall Time vs. Collector to Emitter
Current
Figure 11. Turn−Off Delay Time vs. Collector
to Emitter Current
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5
FGH50N3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued)
16
Duty Cycle < 0.5%, VCE = 10 V
Pulse Duration = 250 s
200
VGE, Gate to Emitter Voltage (V)
ICE, Collector to Emitter Current (A)
250
150
TJ = 25°C
100
TJ = 125°C
50
0
TJ = −55°C
10
8
9
6
7
VGE, Gate to Emitter Voltage (V)
5
IG(REF) = 1 mA, RL = 5 , TJ = 25°C
14
12
VCE = 300 V
10
8
6
VCE = 200 V
4
VCE = 100 V
2
0
11
0
25
Figure 14. Gate Charge
1.2
ETOTAL, Total Switching Energy Loss (mJ)
ETOTAL, Total Switching Energy Loss (mJ)
Figure 13. Transfer Characteristics
RG = 5 , L = 100 H, VCE = 180 V,
VGE = 15 V
1.0 ETOTAL = EON2 + EOFF
ICE = 60 A
0.8
0.6
ICE = 30 A
0.4
ICE = 15 A
0.2
0
25
50
75
100
125
150
40
TJ = 125°C, L = 100 H, VCE = 180 V,
VGE = 15 V
ETOTAL = EON2 + EOFF
10
ICE = 60 A
1
ICE = 30 A
ICE = 15 A
0.1
10
100
RG, Gate Resistance ()
1
TC, Case Temperature (°C)
VCE, Collector to Emitter Voltage (V)
C, Capacitance (nF)
3.5
Frequency = 1 MHz
CIES
1.0
COES
CRES
0.1
0.05
0
1000
Figure 16. Total Switching Loss vs. Gate
Resistance
Figure 15. Total Switching Loss vs. Case
Temperature
10
50
75 100 125 150 175 200
QG, Gate Charge (nC)
10 20 30 40 50 60 70 80 90 100
VCE, Collector to Emitter Voltage (V)
Duty Cycle < 0.5%
Pulse Duration = 250 s, TJ = 25°C
3.0
ICE = 60 A
2.5
ICE = 30 A
2.0
ICE = 15 A
1.5
1.0
6
7
8
9 10 11 12 13 14 15 16
VGE, Gate to Emitter Voltage (V)
Figure 18. Collector to Emitter On−State
Voltage vs. Gate to Emitter Voltage
Figure 17. Capacitance vs. Collector to Emitter
Voltage
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6
FGH50N3
ZJC, Normalized Thermal Response
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) (continued)
100
0.50
0.20
10−1
t1
0.10
PD
t2
0.05
Duty Factor, D = t1/t2
Peak TJ = (PD x ZJC x RJC) + TC
0.02
0.01
10−2
10−5
Single Pulse
10−3
10−2
10−1
t1, Rectangular Pulse Duration (s)
10−4
100
101
Figure 19. IGBT Normalized Transient Thermal Impedance,
Junction to Case
FFH30US30S
Diode 49449
90%
10%
VGE
L = 100 H
EON2
EOFF
VCE
RG = 5
+
FGH50N3
−
90%
VDD = 180 V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 21. Switching Test Waveforms
Figure 20. Inductive Switching Test Circuit
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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