FGH50T65SQD-F155

IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • • • • • • • • • Max Junction Temperature TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 650 V 50 A C G E E C G Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH50T65 SQD $Y &Z &3 &K FGH50T65SQD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November, 2019 − Rev. 3 1 Publication Order Number: FGH50T65SQD/D FGH50T65SQD ABSOLUTE MAXIMUM RATINGS Symbol FGH50T65SQD−F155 Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V TC = 25°C 100 A TC = 100°C 50 A TC = 25°C 200 A 200 A IC Description Collector Current ILM (Note 1) Pulsed Collector Current ICM (Note 2) Pulsed Collector Current IF Diode Forward Current TC = 25°C 50 A Diode Forward Current TC = 100°C 30 A 200 A 268 W IFM Pulsed Diode Maximum Forward Current PD Maximum Power Dissipation 134 W TJ Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C TC = 25°C TC = 100°C TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 3 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH50T65SQD−F155 Unit RqJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.56 _C/W RqJC (Diode) Thermal Resistance, Junction to Case, Max. 1.25 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGH50T65SQD−F155 FGH50T65SQD TO−247−3LD Tube − − 30 www.onsemi.com 2 FGH50T65SQD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V IC = 1 mA, Reference to 25°C − 0.6 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 50 mA, VCE = VGE 2.6 4.5 6.4 V VCE(sat) Collector to Emitter Saturation Voltage IC = 50 A, VGE = 15 V, TC = 25 °C − 1.6 2.1 V IC = 50 A, VGE = 15 V, TC = 175°C − 1.92 − V VCE = 30 V, VGE = 0 V, f = 1MHz − 3275 − pF − 84 − pF − 12 − pF − 22 − ns − 8.7 − ns Turn−Off Delay Time − 105 − ns Fall Time − 2.5 − ns Eon Turn−On Switching Loss − 180 − mJ Eoff Turn−Off Switching Loss − 45 − mJ Ets Total Switching Loss − 225 − mJ − 19 − ns − 13 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Turn−On Delay Time Rise Time Turn−On Delay Time Rise Time VCC = 400 V, IC = 12.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C Turn−Off Delay Time − 93 − ns Fall Time − 6.4 − ns Eon Turn−On Switching Loss − 410 − mJ Eoff Turn−Off Switching Loss − 88 − mJ Ets Total Switching Loss − 498 − mJ Td(on) Turn−On Delay Time − 20 − ns − 9.8 − ns Turn−Off Delay Time − 116 − ns Fall Time − 3.5 − ns Eon Turn−On Switching Loss − 402 − mJ Eoff Turn−Off Switching Loss − 110 − mJ Ets Total Switching Loss − 512 − mJ Tf Tr Td(off) Tf Rise Time VCC = 400 V, IC = 12.5 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175°C www.onsemi.com 3 FGH50T65SQD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit − 18 − ns − 15 − ns Turn−Off Delay Time − 102 − ns Fall Time − 8 − ns Eon Turn−On Switching Loss − 641 − mJ Eoff Turn−Off Switching Loss − 203 − mJ Ets Total Switching Loss − 844 − mJ Qg Total Gate Charge − 99 − nC Qge Gate to Emitter Charge − 17 − nC Qgc Gate to Collector Charge − 23 − nC SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Turn−On Delay Time Rise Time VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175°C VCE = 400 V, IC = 50 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Test Conditions IF = 30 A IF = 30 A, dIF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 2.2 2.6 V TC = 175°C − 1.9 − TC = 175°C − 40 − mJ TC = 25°C − 31 − ns TC = 175°C − 207 − TC = 25°C − 48 − TC = 175°C − 820 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH50T65SQD TYPICAL CHARACTERISTICS 200 TC = 25°C 20V 15V 12V 10V 150 VGE = 8V Collector Current, IC (A) Collector Current, IC (A) 200 100 50 0 0 1 2 3 4 150 VGE = 8V 100 50 0 5 0 1 Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) Collector Current, IC (A) 3 150 100 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 0 1 2 3 4 2 50A IC = 25A Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 20 12 IC = 25A 50A 100A 4 8 12 16 0 50 100 150 200 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 16 0 −50 Collector−Emitter Case Temperature, TC (5C) Common Emitter TC = 25°C 4 5 100A Figure 3. Typical Saturation Voltage Characteristics 8 4 Common Emitter VGE = 15 V 1 −100 5 Collector−Emitter Voltage, VCE (V) 20 3 Figure 2. Typical Output Characteristics 200 0 2 Collector−Emitter Voltage, VCE (V) Figure 1. Typical Output Characteristics 50 20V 15V 12V 10V TC = 175°C 16 12 Gate−Emitter Voltage, VGE (V) IC = 25A 8 50A 100A 4 0 20 Common Emitter TC = 175°C 4 8 12 16 20 Gate−Emitter Voltage, VGE (V) Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH50T65SQD TYPICAL CHARACTERISTICS (Continued) 15 Gate−Emitter Voltage, VGE (V) 10000 Capacitance (pF) Cies 1000 100 Coes Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 10 1 1 10 12 400V 300V 6 3 Collector−Emitter Voltage, VCE (V) Figure 7. Capacitance Characteristics VCC = 200V 9 0 30 Common Emitter TC = 25°C 0 20 40 60 80 Gate Charge, Qg (nC) 100 Figure 8. Gate Charge Characteristics 100 1000 Switching Time (ns) Switching Time (ns) tr td(on) Common Emitter 15 V VCC = 400 V, VGE = 15V IC = 50 A TC = 25°C TC = 175°C 10 5 0 10 20 30 40 td(off) 10 50 tf 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TC = 25°C TC = 175°C 0 10 Gate Resistance, RG (W) Figure 9. Turn−on Characteristics vs. Gate Resistance 200 Switching Time (ns) Switching Loss (mJ) Eon 1000 Eoff Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TC = 25°C TC = 175°C 0 10 20 30 40 30 40 50 Figure 10. Turn−off Characteristics vs. Gate Resistance 5000 100 20 Gate Resistance, RG (W) 100 Gate Resistance, RG (W) tr td(on) 10 50 Common Emitter VGE = 15 V, PG = 4.7 W TC = 25°C TC = 175°C 0 25 50 75 100 125 150 Collector Current, IC (A) Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 6 FGH50T65SQD TYPICAL CHARACTERISTICS (Continued) 500 10000 Eon Switching Loss (mJ) Switching Time (ns) tf 100 td(off) 10 1 Common Emitter VGE = 15 V, RG = 4.7 W TC = 25°C TC = 175°C 0 25 50 75 100 125 Eoff 1000 Common Emitter VGE = 15 V, RG = 4.7 W TC = 25°C TC = 175°C 100 50 150 0 25 Collector Current, IC (A) Figure 13. Turn−off Characteristics vs. Collector Current 100 TC = 25°C 150 TC = 75°C 100 TC = 100°C 50 0 1k 10k 100k 100μμ s 1ms 10 10 ms 1 0.1 1M *Notes: 1.TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 10 Reverse Recovery Current, Irr (A) o TC = 25 C 10 o TC = 75 C TC = 25°C TC = 75°C TC = 175°C 0 1 2 3 4 100 1000 Figure 16. SOA Characteristics 100 Forward Current, IF (A) 10 Collector−Emitter Voltage, VCE (V) 150 1 150 10μμ s Figure 15. Load Current vs. Frequency o 125 DC Switching Frequency, f (Hz) TC = 175 C 100 300 Square Wave TJ ≤ 175°C ,D = 0.5, VCE = 400 V, VGE= 15/0V, RG = 4.7 W 200 75 Figure 14. Switching Loss vs. Collector Current Collector Current, IC (A) Collector Current (A) 250 50 Collector Current, IC (A) TC = 75°C di/dt = 200A/ms 8 6 di/dt = 100A/ms 4 di/dt = 200A/ms di/dt = 100A/ms 2 0 5 TC = 25°C 0 20 40 60 80 100 Forward Current, IF (A) Forward Voltage, VF (V) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 7 FGH50T65SQD TYPICAL CHARACTERISTICS (Continued) 1200 TC = 75°C Stored Recovery Charge, Qrr (nC) TC = 25°C 280 210 140 di/dt = 100A/ms di/dt = 200A/ms 70 0 20 40 60 80 TC = 25°C TC = 75°C 900 600 di/dt = 200A/ms di/dt = 100A/ms 300 0 100 0 20 Forward Current, IF (A) 40 60 Figure 20. Stored Charge 0.6 0.5 0.1 0.2 0.1 P DM 0.05 0.02 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 single pulse 0.01 −5 10 −4 10 −3 −2 10 −1 10 10 0 10 Rectangular Pulse Duration (s) Figure 21. Transient Thermal Impedance of IGBT 2 1 0.5 0.2 0.1 0.1 0.05 P DM 0.02 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 single pulse 0.01 −5 10 80 Forward Current, IF (A) Figure 19. Reverse Recovery Time Thermal Response (Zthjc) 0 Thermal Response (Zthjc) Reverse Recovery Time, trr (ns) 350 −4 10 −3 −2 10 10 −1 10 Rectangular Pulse Duration (s) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 0 10 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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