FGH60N60SFDTU-F085

IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 60 A High Input Impedance Fast Switching Qualified to Automotive Requirements of AEC−Q101 This Device is Pb−Free and is RoHS Compliant G E E Applications • Automotive chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SFDTU $Y &Z &3 &K FGH60N60SFDTU = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February, 2020 − Rev. 3 1 Publication Order Number: FGH60N60SFDTU−F085/D FGH60N60SFDTU−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V ±30 V 120 A 60 A Description Transient Gate−to−Emitter Voltage Collector Current IC TC = 25°C TC = 100°C Pulsed Collector Current TC = 25°C ICM (Note 1) 180 A Maximum Power Dissipation TC = 25°C PD 378 W 151 W TC = 100°C Operating Junction Temperature TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive test, Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Unit Thermal Resistance, Junction to Case RJC(IGBT) 0.33 °C/W Thermal Resistance, Junction to Case RJC(Diode) 1.1 °C/W RJA 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH60N60SFDTU−F085 FGH60N60SFDTU TO−247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 − − V Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A − 0.4 − V/°C Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 5.1 6.6 V Collector to Emitter Saturation Voltage VCE(sat) IC = 60 A, VGE = 15 V − 2.2 2.9 V IC = 60 A, VGE = 15 V, TC = 125°C − 2.4 − V ON CHARACTERISTICs www.onsemi.com 2 FGH60N60SFDTU−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 2940 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 310 − pF Reverse Transfer Capacitance Cres − 100 − pF − 26 − ns − 54 − ns td(off) − 134 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time VCC = 400 V, IC = 60 A, RG = 5  VGE = 15 V, Inductive Load, TC = 25°C td(on) Rise Time tr Turn−Off Delay Time Fall Time tf − 18 62 ns Turn−On Switching Loss Eon − 1.97 − mJ Turn−Off Switching Loss Eoff − 0.57 − mJ Total Switching Loss Ets 2.54 − mJ Turn−On Delay Time td(on) − 26 − ns − 50 − ns td(off) − 142 − ns tf − 24 − ns Turn−On Switching Loss Eon − 2.5 − mJ Turn−Off Switching Loss Eoff − 0.8 − mJ Total Switching Loss Ets − 3.2 − mJ Total Gate Charge Qg − 188 − nC Gate to Emitter Charge Qge − 21 − nC Gate to Collector Charge Qgc − 98 − nC Min Typ Max Unit TC = 25°C − 1.9 2.6 V TC = 125°C − 1.7 − TC = 25°C − 55 − TC = 125°C − 204 − TC = 25°C − 125 − TC = 125°C − 895 − Rise Time VCC = 400 V, IC = 60 A, RG = 5  VGE = 15 V, Inductive Load, TC = 125°C tr Turn−Off Delay Time Fall Time VCE = 400 V, IC = 60 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Symbol VFM trr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Test Conditions IF = 30 A IF = 30 A, diF/dt = 200 A/s Diode Reverse Recovery Charge ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH60N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS 180 TC = 25°C 15 V 20 V 150 120 10 V 90 60 0 0 2 4 6 Collector−Emitter Voltage, VCE [V] 90 60 VGE = 8 V 30 0 8 180 Common Emitter VGE = 15 V TC = 25°C TC = 125°C 120 Collector Current, IC [A] Collector Current, IC [A] 0 90 60 30 150 120 90 60 30 0 4 2 3 1 Collector−Emitter Voltage, VCE [V] 0 5 0 20 Common Emitter VGE = 15 V 120 A 3.0 2.5 60 A 2.0 1.5 3 6 9 12 Gate−Emitter Voltage, VGE [V] 15 Figure 4. Transfer Characteristics Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 3.5 8 Common Emitter VCE = 20 V TC = 25°C TC = 125°C Figure 3. Typical Saturation Voltage Characteristics 4.0 2 4 6 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics 180 0 10 V 120 Figure 1. Typical Output Characteristics 150 15 V 20 V 12 V VGE = 8 V 30 TC = 125°C 150 12 V Collector Current, IC [A] Collector Current, IC [A] 180 IC = 30 A 1.0 125 25 50 75 100 Collector−Emitter Case Temperature, TC [°C] Common Emitter TC = −40°C 16 12 8 120 A 4 60 A IC = 30 A 0 0 8 12 16 4 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 4 FGH60N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 20 Common Emitter TC = 25°C Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 16 12 8 120 A 4 60 A IC = 30 A 0 0 4 8 12 16 16 12 8 120A 4 0 20 Gate−Emitter Voltage, VGE [V] Cies Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C Gate−Emitter Voltage, VGE [V] Capacitance [pF] 5000 4000 3000 Coes 2000 1000 0 16 4 8 12 Gate−Emitter Voltage, VGE [V] 20 Cres 1 10 Collector−Emitter Voltage, VCE [V] Common Emitter TC = 25°C 12 VCC = 100 V 9 300 V 200 V 6 3 0 30 0 50 100 150 Gate Charge, Qg [nC] 200 Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics 300 500 Collector Current, IC [A] 10 s 100 Collector Current, IC [A] IC = 30 A 15 6000 100 s 10 1 ms 1 10 ms DC Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.01 60A Figure 8. Saturation Voltage vs. VGE Figure 7. Saturation Voltage vs. VGE 0 Common Emitter TC = 125°C 1 100 10 Collector−Emitter Voltage, VCE [V] 100 10 1 1000 Safe Operating Area VGE = 15 V, TC = 125°C 1 10 100 1000 Collector−Emitter Voltage, VCE [V] Figure 12. Turn−Off Switching SOA Characteristics Figure 11. SOA Characteristics www.onsemi.com 5 FGH60N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 6000 100 Switching Time [ns] Switching Time [ns] 200 tr td(on) 10 0 Common Emitter VCC = 400 V, VGE = 15 V IC = 60 A TC = 25°C TC = 125°C 10 20 30 40 Common Emitter VCC = 400 V, VGE = 15 V IC = 60 A TC = 25°C TC = 125°C 1000 td(off) 100 tf 10 50 Gate Resistance, RG [] 200 1000 Common Emitter VGE = 15 V, RG = 5  TC = 25°C TC = 125°C Switching Time [ns] Switching Time [ns] 20 30 40 Gate Resistance, RG [] 50 Figure 14. Turn−Off Characteristics vs. Gate Resistance Figure 13. Turn−On Characteristics vs. Gate Resistance 100 10 0 tr td(on) Common Emitter VGE = 15 V, RG = 5  TC = 25°C TC = 125°C td(off) 100 tf 10 2 20 40 60 80 100 10 120 0 20 Collector Current, IC [A] 10 Switching Loss [mJ] Switching Loss [mJ] 10 Common Emitter VCC = 400 V, VGE=  V IC = 60 A TC = 25°C TC = 125°C Eon Eoff 1 0.5 0 10 20 30 40 Gate Resistance, RG [] 120 Figure 16. Turn−Off Characteristics vs. Collector Current Figure 15. Turn−On Characteristics vs. Collector Current 20 40 60 80 100 Collector Current, IC [A] 1 0.1 50 Common Emitter VGE = 15 V, RG = 5  TC = 25°C TC = 125°C Eon Eoff 0 20 40 60 80 100 Collector Current, IC [A] 120 Figure 18. Switching Loss vs. Collector Current Figure 17. Switching Loss vs. Gate Resistance www.onsemi.com 6 FGH60N60SFDTU−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 500 200 100 TJ = 125°C Reverse Current, IR [A] Forward Current, IF [A] 100 TJ = 25°C 10 TJ = 75°C 1 0.1 1 2 3 Forward Voltage, VF [V] 0 TC = 125°C 10 TC = 75°C 1 TC = 25°C 0.1 0.01 50 4 200 150 Reverse Recovery Time, trr [ns] 80 200 A/s 100 di/dt = 100 A/s 50 TC = 25°C 0 10 20 40 30 50 70 200 A/s 60 40 60 di/dt = 100 A/s 50 TC = 25°C 0 Forward Current, IF [A] 10 20 30 40 50 Forward Current, IF [A] Figure 22. Reverse Recovery Time Figure 21. Stored Charge 1 Thermal Response [Zjc] Stored Recovery Charge, Qrr [nC] 600 Figure 20. Reverse Current Figure 19. Forward Characteristics 0 200 400 Reverse Voltage, VR [V] 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 Single Pulse 1E−3 1E−5 1E−4 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−3 0.01 Rectangular Pulse Duration [sec] 0.1 Figure 23. Transient Thermal Impedance of IGBT www.onsemi.com 7 1 60 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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