FGH75T65SHDTL4

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com Features • • • • • • • • • • Maximum Junction Temperature: TJ =175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts Tested for ILM High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant Do Not Recommend for Reflow and Full PKG Dipping VCES IC 650 V 75 A C E1: Kelvin Emitter E2: Power Emitter G E1 E2 Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC C E2 E1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM $Y&Z&3&K FGH75T65 SHDTL4 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SHDTL4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 December, 2019 − Rev. 2 1 Publication Order Number: FGH75T65SHDTL4/D FGH75T65SHDTL4 ABSOLUTE MAXIMUM RATINGS Symbol FGH75T65SHDTL4 Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V TC = 25°C 150 A TC = 100°C 75 A TC = 25°C 300 A 300 A IC Description Collector Current ILM (Note 1) Pulsed Collector Current ICM (Note 2) Pulsed Collector Current IF IFM(Note 2) Diode Forward Current TC = 25°C 125 A Diode Forward Current TC = 100°C 75 A 300 A 455 W Pulsed Diode Maximum Forward Current PD Maximum Power Dissipation 227 W TJ Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C TC = 25°C TC = 100°C TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 73 , Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SHDTL4 Unit RJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.33 _C/W RJC (Diode) Thermal Resistance, Junction to Case, Max. 0.65 _C/W 40 _C/W Thermal Resistance, Junction to Ambient, Max. RJA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75T65SHDTL4 FGH75T65SHDTL4 TO−247−4LD Tube − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage IC = 1 mA, Reference to 25°C − 0.65 − V/°C ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 A IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA BVCES  BVCES /  TJ ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 75 mA, VCE = VGE 4.0 5.5 7.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V − 1.6 2.1 V IC = 75 A, VGE = 15 V, TC = 175°C − 2.28 − V www.onsemi.com 2 FGH75T65SHDTL4 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit − 3710 − pF − 183 − pF − 43 − pF − 55 − ns − 50 − ns Turn−Off Delay Time − 189 − ns Fall Time − 39 − ns Eon Turn−On Switching Loss − 1.06 − mJ Eoff Turn−Off Switching Loss − 1.56 − mJ Ets Total Switching Loss − 2.62 − mJ Td(on) Turn−On Delay Time − 48 − ns − 56 − ns Turn−Off Delay Time − 205 − ns Fall Time − 40 − ns Eon Turn−On Switching Loss − 2.34 − mJ Eoff Turn−Off Switching Loss − 1.81 − mJ Ets Total Switching Loss − 4.15 − mJ Qg Total Gate Charge − 126 − nC Qge Gate to Emitter Charge − 24.1 − nC Qgc Gate to Collector Charge − 47.6 − nC DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Td(off) Tf VCC = 400 V, IC = 75 A, RG = 15 , VGE = 15 V, Inductive Load, TC = 25°C Turn−On Delay Time Rise Time VCC = 400 V, IC = 75 A, RG = 15 , VGE = 15 V, Inductive Load, TC = 25°C Rise Time VCE = 400 V, IC = 75 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Test Conditions IF = 75 A IF = 75 A, dIF/dt = 200 A/s Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 1.8 2.1 V TC = 175°C − 1.7 − TC = 175°C − 160 − J TC = 25°C − 76 − ns TC = 175°C − 270 − TC = 25°C − 206 − TC = 175°C − 2199 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH75T65SHDTL4 TYPICAL PERFORMANCE CHARACTERISTICS o TC = 25 C 20V 12V Collector Current, IC [A] 240 300 15V 10V 180 120 VGE = 8V 60 0 0 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] 240 4 Collector−Emitter Voltage, VCE [V] Collector Current, IC [A] 0 o TC = 25 C o 180 120 60 0 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] 6 Collector−Emitter Voltage, VCE [V] 16 12 75A 150A 4 8 12 16 Gate−Emitter Voltage, VGE [V] 150A 75A 2 IC = 40A Common Emitter o o 4 3 20 TC = 25 C IC = 40A Common Emitter VGE = 15V Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 8 6 1 −100 −50 0 50 100 150 200 o Collector−Emitter Case Temperature, TC [ C] Figure 3. Typical Saturation Voltage Characteristics 20 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics TC = 175 C Collector−Emitter Voltage, VCE [V] VGE = 8V 60 0 Common Emitter VGE = 15V 0 10V 120 300 0 15V 12V 180 6 Figure 1. Typical Output Characteristics 240 20V o TC = 175 C Collector Current, IC [A] 300 TC = 175 C 16 12 Figure 5. Saturation Voltage vs. VGE IC = 40A 4 0 20 75A 8 4 150A 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 FGH75T65SHDTL4 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 15 10000 Common Emitter Gate−Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Cres Common Emitter VGE = 0V, f = 1MHz TC = 25 C 12 300V VCC = 200V 9 400V 6 3 o TC = 25 C 10 1 10 Collector−Emitter Voltage, VCE [V] 0 30 0 25 50 Figure 7. Capacitance Characteristics 100 125 Figure 8. Gate Charge Characteristics 400 1000 Common Emitter VCC = 400V, V GE = 15V IC = 75A td(off) o TC = 25 C Switching Time [ns] Switching Time [ns] 75 Gate Charge, Qg [nC] o TC = 175 C tr 100 td(on) 100 Common Emitter VCC = 400V, VGE = 15V IC = 75A tf o TC = 25 C o TC = 175 C 30 10 20 30 40 Gate Resistance, RG [W] 10 10 50 Figure 9. Turn−on Characteristics vs. Gate Resistance 20 30 40 Gate Resistance, RG [W] 50 Figure 10. Turn−off Characteristics vs. Gate Resistance 100 5 Eoff Eon 1 Switching Time [ns] Switching Loss [mJ] td(on) Common Emitter VCC = 400V, VGE = 15V IC = 75A tr Common Emitter VGE = 15V, RG = 15 W o o TC = 25 C TC = 25 C o 10 TC = 175 C 0.4 10 20 30 40 Gate Resistance, RG [W] 8 15 50 o TC = 175 C 30 45 60 75 Collector Current, IC [A] Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 5 150 FGH75T65SHDTL4 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 400 5 Eoff Switching Loss [mJ] Switching Time [ns] td(off) 100 tf Common Emitter VGE = 15V, RG = 15 W 1 Eon Common Emitter VGE = 15V, RG = 15 W o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 10 15 30 45 60 0.1 15 75 30 Collector Current, I C [A] Figure 13. Turn−off Characteristics vs. Collector Current 375 o TC = 25 C o TC = 75 C o TC = 100 C 75 0 1k 10k 100k Switching Frequency, f[Hz] *Notes: 1.TC = 255C 2.TJ = 1755C 3.Single Pulse 1 0.1 1M 100ms 1ms 10 ms DC 10 Figure 15. Load Current vs. Frequency 1 20 o o TJ = 25 C 10 o TJ = 75 C o TC = 25 C o TC = 75 C o TC = 25 C Reverse Recovery Currnet, Irr [A] 100 TJ = 175 C 10 100 1000 Collector−Emitter Voltage, VCE [V] Figure 16. SOA Characteristics 300 Forward Current, IF [A] 10ms 100 VGE = 15/0V, RG = 15 W Collector Current, I c [A] Collector Current, [A] o 150 75 300 TJ