IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SQD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer the optimum
performance for solar inverter, UPS, Welder, Telecom, ESS and PFC
applications where low conduction and switching losses are essential.
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C
Features
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ =175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
These Devices are Pb−Free and are RoHS Compliant
Applications
G
E
E
C
G
TO−247−3LD
CASE 340CH
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
MARKING DIAGRAM
$Y&Z&3&K
FGH75T65SQD
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FGH75T65SQD = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
November, 2019 − Rev. 3
1
Publication Order Number:
FGH75T65SQD/D
FGH75T65SQD
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Rating
Unit
Collector to Emitter Voltage
VCES
650
V
Gate to Emitter Voltage
VGES
±20
V
±30
V
150
A
75
A
ILM (Note 1)
300
A
ICM (Note 2)
300
A
IF
75
A
50
A
Description
Transient Gate to Emitter Voltage
Collector Current
TC = 25°C
Collector Current
TC = 100°C
Pulsed Collector Current
TC = 25°C
IC
Pulsed Collector Current
Diode Forward Current
TC = 25°C
Diode Forward Current
TC = 100°C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
TC = 25°C
Maximum Power Dissipation
TC = 100°C
IFM (Note 2)
300
A
PD
375
W
188
W
Operating Junction Temperature
TJ
−55 to +175
°C
Storage Temperature Range
Tstg
−55 to +175
°C
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. VCC = 400 V,VGE = 15 V, IC = 300 A, RG = 3 , Inductive Load
2. Repetive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
FGH75T65SQD−F155
Unit
Thermal Resistance, Junction to Case
Parameter
RJC(IGBT)
0.4
°C/W
Thermal Resistance, Junction to Case
RJC(Diode)
0.65
°C/W
RJA
40
°C/W
Thermal Resistance, Junction to Ambient
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH75T65SQD−F155
FGH75T65SQD
TO−247−3
(Pb−Free)
Tube
−
−
30
ELECTRCAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
650
−
−
V
IC = 1 mA, Reference to 25°C
−
0.6
−
V/°C
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BVCES
VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
BVCES/TJ
Collector Cut−Off Current
ICES
VCE = VCES, VGE = 0 V
−
−
250
A
G−E Leakage Current
IGES
VGE = VGES, VCE = 0 V
−
−
±400
nA
G−E Threshold Voltage
VGE(th)
IC = 75 mA, VCE = VGE
2.6
4.5
6.4
V
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 75 A, VGE = 15 V
−
1.6
2.1
V
IC = 75 A, VGE = 15 V, TC = 175°C
−
1.92
−
V
ON CHARACTERISTICs
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FGH75T65SQD
ELECTRCAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
−
4845
−
pF
DYNAMIC CHARACTERISTICS
VCE = 30 V, VGE = 0 V, f = 1 MHz
Input Capacitance
Cies
Output Capacitance
Coes
−
155
−
pF
Reverse Transfer Capacitance
Cres
−
14
−
pF
−
23
−
ns
−
10
−
ns
td(off)
−
120
−
ns
SWITCHING CHARACTERISTICS
Turn−On Delay Time
VCC = 400 V, IC = 18.8 A,
RG = 4.7 VGE = 15 V,
Inductive Load, TC = 25°C
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
tf
−
7
−
ns
Turn−On Switching Loss
Eon
−
300
−
J
Turn−Off Switching Loss
Eoff
−
70
−
J
Total Switching Loss
Ets
−
370
−
J
Turn−On Delay Time
td(on)
−
26
−
ns
−
19
−
ns
td(off)
−
114
−
ns
tf
−
11
−
ns
Turn−On Switching Loss
Eon
−
746
−
J
Turn−Off Switching Loss
Eoff
−
181
−
J
Total Switching Loss
Ets
−
927
−
J
Total Gate Charge
Qg
−
128
−
nC
Gate to Emitter Charge
Qge
−
23
−
nC
Gate to Collector Charge
Qgc
−
29
−
nC
Min
Typ
Max
Unit
V
Rise Time
VCC = 400 V, IC = 37.5 A,
RG = 4.7 VGE = 15 V,
Inductive Load, TC = 25°C
tr
Turn−Off Delay Time
Fall Time
VCE = 400 V, IC = 75 A, VGE = 15 V
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Parametr
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
VFM
Erec
Test Conditions
IF = 50 A
IF = 50 A, dIF / dt = 200 A/s
trr
Qrr
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TC = 25°C
−
2.0
2.6
TC = 175°C
−
1.64
−
TC = 175°C
−
61
−
J
TC = 25°C
−
43
−
ns
TC = 175°C
−
210
−
TC = 25°C
−
90
−
TC = 175°C
−
1280
−
nC
FGH75T65SQD
TYPICAL PERFORMANCE CHARACTERISTICS
300
300
20V
o
TC = 25 C
240
12V
10V
VGE = 8V
180
120
60
0
0
1
2
3
4
180
120
Collector−Emitter Voltage, VCE [V]
240
o
TC = 25 C
o
TC = 175 C
180
120
60
0
1
2
3
4
Collector−Emitter Voltage, VCE [V]
3
4
1
2
Collector−Emitter Voltage, VCE [V]
0
3
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
2
75A
IC = 40A
1
−100
5
−50
0
50
100
150
200
Collector−Emitter Case Temperature, TC [°C]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
20
Common Emitter
Common Emitter
o
Collector−Emitter Voltage, VCE [V]
TC = 25 C
16
12
IC = 40A
8
75A
150A
4
4
8
12
16
Gate−Emitter Voltage, VGE [V]
5
150A
Figure 3. Typical Saturation Voltage
Characteristics
Collector−Emitter Voltage, VCE [V]
VGE = 8V
Figure 2. Typical Output Characteristics
300
Collector Current, Ic [A]
10V
0
5
Figure 1. Typical Output Characteristics
0
12V
240
60
Collector−Emitter Voltage, VCE [V]
0
20V
o
TC = 175 C
15V
Collector Current, Ic [A]
Collector Current, Ic [A]
15V
o
TC = 175 C
16
12
75A
150A
4
0
20
IC = 40A
8
4
8
12
16
Gate−Emitter Voltage, VGE [V]
20
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs VGE
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FGH75T65SQD
TYPICAL PERFORMANCE CHARACTERISTICS
10000
15
Coes
Cres
10
TC = 25 C
Gate−Emitter Voltage, VGE [V]
Capacitance [pF]
1000
100
Common Emitter
o
Cies
Common Emitter
VGE = 0V, f = 1MHz
12
300V
VCC= 200V
9
400V
6
3
o
TC = 25 C
1
11
0
Collector−Emitter Voltage, VCE [V]
0
30
0
25
50
75
100
125
Gate Charge, Qg [nC]
Figure 8. Gate Charge Characteristic
Figure 7. Capacitance Characteristics
500
1000
Common Emitter
VCC = 400V, V GE = 15V
IC = 75A
t d(off)
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
150
o
TC = 175 C
tr
100
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
t d(on)
o
TC = 25 C
o
20
0
10
20
30
40
10
50
TC = 175 C
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
Figure 9. Turn−On Characteristics vs.
Gate Resistance
Figure 10. Turn−Off Characteristics vs.
Gate Resistance
10000
1000
Common Emitter
VGE = 15V, RG = 4.7 W
Eon
o
TC = 25 C
Switching Time [ns]
Switching Loss [s]
o
Common Emitter
VCC = 400V, VGE = 15V
Eoff
IC = 75A
1000
TC = 175 C
tr
100
t d(on)
o
TC = 25 C
o
TC = 175 C
500
0
10
20
30
40
10
50
0
30
60
90
120
150
Collector Current, IC [A]
Gate Resistance, RG []
Figure 12. Turn−On Characteristics vs.
Collector Current
Figure 11. Switching Loss vs.
Gate Resistance
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FGH75T65SQD
TYPICAL PERFORMANCE CHARACTERISTICS
500
10000
Eon
Switching Loss [s]
Switching Time [ns]
t d(off)
100
tf
Common Emitter
VGE = 15V, RG = 4.7 W
1000
o
TC = 25 C
10
TC = 175 C
0
30
50
60
90
120
Collector Current, IC [A]
150
o
TC = 175 C
90
120
60
Collector Current, IC [A]
30
0
150
Figure 14. Switching Loss vs.
Collector Current
Figure 13. Turn−Off Characteristics vs.
Collector Current
375
o
TC = 25 C
100
o
5
Common Emitter
VGE = 15V, RG= 4.7 W
Eoff
500
Square Wave
o
TJ