FGH75T65SQDT-F155

650 V, 75 A Field Stop Trench IGBT Features • • • • • • • • • General Description 175oC Maximum Junction Temperature: TJ = Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ IC = 75 A 100% of the Parts tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant E C Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer he optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings FGH75T65SQDT-F155(1) Unit VCES Symbol Collector to Emitter Voltage Description 650 V VGES Gate to Emitter Voltage  20 V Transient Gate to Emitter Voltage 30 V o Collector Current @ TC = 25 C 150 A Collector Current @ TC = 100oC 75 A ILM (2) Pulsed Collector Current @ TC = 25oC ICM (3) Pulsed Collector Current IC IF IFM (3) PD 300 A 300 A Diode Forward Current @ TC = 25oC 150 A Diode Forward Current @ TC = 100oC 75 A Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC 300 A 375 W 188 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1. Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a underscore will be replaced with a dash. This is a notification. 2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 21  , Inductive Load 3. Repetitive rating: Pulse width limited by max. junction temperature © 2017 Semiconductor Components Industries, LLC. November-2017, Re v. 2 Publication Order Number: FGH75T65SQDT/D FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT FGH75T65SQDT Symbol Parameter FGH75T65SQDT-F155 Unit RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.4 oC/W RJC(Diode) Thermal Resistance, Junction to Case, Max. 0.65 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark FGH75T65SQDT_F155 FGH75T65SQDT Package Packing Method Reel Size Tape Width TO-247 G03 Electrical Characteristics of the IGBT Symbol Parameter Tube - - Quantity 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.6 - V/oC Off Characteristics BVCES BVCES / TJ Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA Temperature Coefficient of Breakdown IC = 1 mA, Reference to 25oC Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 75 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 2.6 4.5 6.4 V IC = 75 A, VGE = 15 V - 1.6 2.1 V IC = 75 A, VGE = 15 V, TC = 175oC - 1.92 - V - 4845 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 155 - pF - 14 - pF 23 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 10 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 70 - uJ Ets Total Switching Loss - 370 - uJ td(on) Turn-On Delay Time - 26 - ns tr Rise Time - 19 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss VCC = 400 V, IC = 18.8 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 25oC www.onsemi.com 2 - 7 - ns - 300 - uJ - 114 - ns - 11 - ns - 746 - uJ - 181 - uJ - 927 - uJ FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter (Continued) Test Conditions Min. Typ. Max. Unit 22 - ns Td(on) Turn-On Delay Time - Tr Rise Time - 12 - ns Td(off) Turn-Off Delay Time - 135 - ns Tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 180 - J Ets Total Switching Loss - 940 - J VCC = 400 V, IC = 18.8 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 175oC - 14 - ns - 760 - J Td(on) Turn-On Delay Time - 24 - ns Tr Rise Time - 24 - ns - 125 - ns - 10 - ns Td(off) Turn-Off Delay Time Tf Fall Time Eon Turn-On Switching Loss - 1520 - J Eoff Turn-Off Switching Loss - 401 - J VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V, Inductive Load, TC = 175oC Ets Total Switching Loss - 1921 - J Qg Total Gate Charge - 128 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 75 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy Trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge - 23 - nC - 29 - nC TC = 25°C unless otherwise noted Test Conditions IF = 75 A IF = 75 A, dIF/dt = 200 A/s www.onsemi.com 3 Min. Typ. Max. TC = 25oC - 1.8 2.1 TC = 175oC - 1.7 - TC = 175oC - 160 - TC = 25oC - 76 - TC = 175oC - 270 - TC = 25oC - 206 - TC = 175oC - 2199 - Unit V J ns nC FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn-on Characteristics vs. Collector Current www.onsemi.com 5 FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge Figure 21.Transient Thermal Impedance of IGBT PDM t1 t2 Figure 22.Transient Thermal Impedance of Diode PDM t1 www.onsemi.com 7 t2 FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics FGH75T65SQDT — 650 V, 75 A Field Stop Trench IGBT Mechanical Dimensions www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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