FGH75T65SQDTL4

DATA SHEET www.onsemi.com IGBT - Field Stop, Trench VCES IC 650 V, 75 A 650 V 75 A FGH75T65SQDTL4 C Description Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. E1: Kelvin Emitter E2: Power Emitter G E1 E2 Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 75 A 100% of the Parts Tested for ILM High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant C E2 E1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC $Y&Z&3&K FGH75T65 SQDTL4 $Y = onsemi Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SQDTL4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 October, 2023 − Rev. 3 1 Publication Order Number: FGH75T65SQDTL4/D FGH75T65SQDTL4 ABSOLUTE MAXIMUM RATINGS Symbol FGH75T65SQDTL4 Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V TC = 25°C 150 A TC = 100°C 75 A TC = 25°C 300 A 300 A IC Description Collector Current ILM (Note 1) Pulsed Collector Current ICM (Note 2) Pulsed Collector Current IF Diode Forward Current TC = 25°C 125 A Diode Forward Current TC = 100°C 75 A 300 A 375 W IFM Pulsed Diode Maximum Forward Current PD Maximum Power Dissipation 188 W TJ Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C TC = 25°C TC = 100°C TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 26.4 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SQDT−F155 Unit RqJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.4 _C/W RqJC (Diode) Thermal Resistance, Junction to Case, Max. 0.65 _C/W 40 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Reel Size Tape Width Qty per Tube FGH75T65SQDTL4 FGH75T65SQDTL4 TO−247−4LD − − 30 www.onsemi.com 2 FGH75T65SQDTL4 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGE = 0 V, IC = 1 mA 650 − − V VGE = 0 V, IC = 1 mA − 0.6 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 75 mA, VCE = VGE 2.6 4.5 6.4 V VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V − 1.6 2.1 V IC = 75 A, VGE = 15 V, TC = 175°C − 1.92 − V VCE = 30 V, VGE = 0 V, f = 1MHz − 4845 − pF − 155 − pF − 14 − pF − 44 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Turn−On Delay Time − 20 − ns Turn−Off Delay Time − 276 − ns Fall Time − 32 − ns Eon Turn−On Switching Loss − 307 − mJ Eoff Turn−Off Switching Loss − 266 − mJ Ets Total Switching Loss − 573 − mJ Td(on) Turn−On Delay Time − 44 − ns − 32 − ns Turn−Off Delay Time − 264 − ns Fall Time − 28 − ns Eon Turn−On Switching Loss − 599 − mJ Eoff Turn−Off Switching Loss − 608 − mJ Ets Total Switching Loss − 1207 − mJ Td(on) Turn−On Delay Time − 40 − ns − 24 − ns Turn−Off Delay Time − 316 − ns Fall Time − 36 − ns Eon Turn−On Switching Loss − 730 − mJ Eoff Turn−Off Switching Loss − 408 − mJ Ets Total Switching Loss − 1138 − mJ Td(off) Tf Tr Td(off) Tf Tr Td(off) Tf Rise Time VCC = 400 V, IC = 18.8 A, RG = 15 W, VGE = 15 V, Inductive Load, TC = 25°C Rise Time Rise Time VCC = 400 V, IC = 37.5 A, RG = 15 W, VGE = 15 V, Inductive Load, TC = 25°C VCC = 400 V, IC = 18.8 A, RG = 15 W, VGE = 15 V, Inductive Load, TC = 150°C www.onsemi.com 3 FGH75T65SQDTL4 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit − 44 − ns − 36 − ns Turn−Off Delay Time − 296 − ns Fall Time − 32 − ns Eon Turn−On Switching Loss − 1240 − mJ Eoff Turn−Off Switching Loss − 853 − mJ Ets Total Switching Loss − 2093 − mJ − 128 − nC − 23 − nC − 29 − nC SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf VCC = 400 V, IC = 37.5 A, RG = 15 W, VGE = 15 V, Inductive Load, TC = 150°C Turn−On Delay Time Rise Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 75 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Test Conditions IF = 75 A IF = 75 A dlF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 1.8 2.1 V TC = 175°C − 1.7 − TC = 175°C − 160 − mJ TC = 25°C − 76 − ns TC = 175°C − 270 − TC = 25°C − 206 − TC = 175°C − 2199 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH75T65SQDTL4 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH75T65SQDTL4 TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED) Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 6 FGH75T65SQDTL4 TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED) Figure 13. Turn−off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 7 FGH75T65SQDTL4 TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED) Figure 19. Reverse Recovery Time Figure 20. Stored Charge P DM t1 t2 Figure 21. Transient Thermal Impedance of IGBT P DM t1 t2 Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales