FGH75T65SQD_F155

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • • • Maximum Junction Temperature : TJ =175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution These Devices are Pb−Free and are RoHS Compliant Applications G E E C G TO−247−3LD CASE 340CH • Solar Inverter, UPS, Welder, Telecom, ESS, PFC MARKING DIAGRAM $Y&Z&3&K FGH75T65SQD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SQD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 April, 2020 − Rev. 5 1 Publication Order Number: FGH75T65SQD/D FGH75T65SQD ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage VGES ±20 V ±30 V 150 A 75 A ILM (Note 1) 300 A ICM (Note 2) 300 A IF 75 A 50 A Description Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current TC = 25°C IC Pulsed Collector Current Diode Forward Current TC = 25°C Diode Forward Current TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IFM (Note 2) 300 A PD 375 W 188 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V,VGE = 15 V, IC = 300 A, RG = 3  , Inductive Load 2. Repetive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol FGH75T65SQD−F155 Unit Thermal Resistance, Junction to Case Parameter RJC(IGBT) 0.4 °C/W Thermal Resistance, Junction to Case RJC(Diode) 0.65 °C/W RJA 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75T65SQD−F155 FGH75T65SQD TO−247−3 (Pb−Free) Tube − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit 650 − − V IC = 1 mA, Reference to 25°C − 0.6 − V/°C OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage BVCES/TJ Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 75 mA, VCE = VGE 2.6 4.5 6.4 V Collector to Emitter Saturation Voltage VCE(sat) IC = 75 A, VGE = 15 V − 1.6 2.1 V IC = 75 A, VGE = 15 V, TC = 175°C − 1.92 − V ON CHARACTERISTICs www.onsemi.com 2 FGH75T65SQD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min. Typ. Max. Unit − 4845 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 155 − pF Reverse Transfer Capacitance Cres − 14 − pF − 23 − ns − 10 − ns td(off) − 120 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VCC = 400 V, IC = 18.8 A, RG = 4.7  VGE = 15 V, Inductive Load, TC = 25°C tf − 7 − ns Turn−On Switching Loss Eon − 300 − J Turn−Off Switching Loss Eoff − 70 − J Total Switching Loss Ets − 370 − J Turn−On Delay Time td(on) − 26 − ns − 19 − ns td(off) − 114 − ns tf − 11 − ns Turn−On Switching Loss Eon − 746 − J Turn−Off Switching Loss Eoff − 181 − J Total Switching Loss Ets − 927 − J Turn−On Delay Time td(on) − 22 − ns Rise Time Turn−Off Delay Time Fall Time Rise Time tr VCC = 400 V, IC = 18.8 A, RG = 4.7  VGE = 15 V, Inductive Load, TC = 175°C − 12 − ns td(off) − 135 − ns tf − 14 − ns Turn−On Switching Loss Eon − 760 − J Turn−Off Switching Loss Eoff − 180 − J Total Switching Loss Ets − 940 − J Turn−On Delay Time td(on) − 24 − ns − 24 − ns td(off) − 125 − ns tf − 10 − ns Turn−On Switching Loss Eon − 1520 − J Turn−Off Switching Loss Eoff − 401 − J Total Switching Loss Ets − 1921 − J Turn−Off Delay Time Fall Time Rise Time Turn−Off Delay Time Fall Time tr VCC = 400 V, IC = 37.5 A, RG = 4.7  VGE = 15 V, Inductive Load, TC = 25°C tr VCC = 400 V, IC = 37.5 A, RG = 4.7  VGE = 15 V, Inductive Load, TC = 175°C VCE = 400 V, IC = 75 A, VGE = 15 V Total Gate Charge Qg − 128 − nC Gate to Emitter Charge Qge − 23 − nC Gate to Collector Charge Qgc − 29 − nC www.onsemi.com 3 FGH75T65SQD ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec Test Conditions IF = 50 A IF = 50 A, dIF / dt = 200 A/s trr Qrr www.onsemi.com 4 Min Typ Max Unit TC = 25°C − 2.0 2.6 V TC = 175°C − 1.64 − TC = 175°C − 61 − J TC = 25°C − 43 − ns TC = 175°C − 210 − TC = 25°C − 90 − TC = 175°C − 1280 − nC FGH75T65SQD TYPICAL PERFORMANCE CHARACTERISTICS 300 300 20V o TC = 25 C 240 12V 10V VGE = 8V 180 120 60 0 0 1 2 3 4 180 120 Collector−Emitter Voltage, VCE [V] 240 o TC = 25 C o TC = 175 C 180 120 60 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 3 4 1 2 Collector−Emitter Voltage, VCE [V] 0 3 Common Emitter VGE = 15V Common Emitter VGE = 15V 2 75A IC = 40A 1 −100 5 −50 0 50 100 150 200 Collector−Emitter Case Temperature, TC [°C] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 20 20 Common Emitter Common Emitter o Collector−Emitter Voltage, VCE [V] TC = 25 C 16 12 IC = 40A 8 75A 150A 4 4 8 12 16 Gate−Emitter Voltage, VGE [V] 5 150A Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE [V] VGE = 8V Figure 2. Typical Output Characteristics 300 Collector Current, Ic [A] 10V 0 5 Figure 1. Typical Output Characteristics 0 12V 240 60 Collector−Emitter Voltage, VCE [V] 0 20V o TC = 175 C 15V Collector Current, Ic [A] Collector Current, Ic [A] 15V o TC = 175 C 16 12 75A 150A 4 0 20 IC = 40A 8 4 8 12 16 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 5 FGH75T65SQD TYPICAL PERFORMANCE CHARACTERISTICS 10000 15 Coes Cres 10 TC = 25 C Gate−Emitter Voltage, VGE [V] Capacitance [pF] 1000 100 Common Emitter o Cies Common Emitter VGE = 0V, f = 1MHz 12 300V VCC= 200V 9 400V 6 3 o TC = 25 C 1 11 0 Collector−Emitter Voltage, VCE [V] 0 30 0 25 50 75 100 125 Gate Charge, Qg [nC] Figure 8. Gate Charge Characteristic Figure 7. Capacitance Characteristics 500 1000 Common Emitter VCC = 400V, V GE = 15V IC = 75A t d(off) o TC = 25 C Switching Time [ns] Switching Time [ns] 150 o TC = 175 C tr 100 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 75A t d(on) o TC = 25 C o 20 0 10 20 30 40 10 50 TC = 175 C 0 10 20 30 40 50 Gate Resistance, RG [] Gate Resistance, RG [] Figure 9. Turn−On Characteristics vs. Gate Resistance Figure 10. Turn−Off Characteristics vs. Gate Resistance 10000 1000 Common Emitter VGE = 15V, RG = 4.7  Eon o TC = 25 C Switching Time [ns] Switching Loss [uJ] o Common Emitter VCC = 400V, VGE = 15V Eoff IC = 75A 1000 TC = 175 C tr 100 t d(on) o TC = 25 C o TC = 175 C 500 0 10 20 30 40 10 50 0 30 60 90 120 150 Collector Current, IC [A] Gate Resistance, RG [] Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 6 FGH75T65SQD TYPICAL PERFORMANCE CHARACTERISTICS 500 10000 Eon Switching Loss [s] Switching Time [ns] t d(off) 100 tf Common Emitter VGE = 15V, RG = 4.7 W 1000 o TC = 25 C 10 TC = 175 C 0 30 50 60 90 120 Collector Current, IC [A] 150 o TC = 175 C 90 120 60 Collector Current, IC [A] 30 0 150 Figure 14. Switching Loss vs. Collector Current Figure 13. Turn−Off Characteristics vs. Collector Current 375 o TC = 25 C 100 o 5 Common Emitter VGE = 15V, RG= 4.7 W Eoff 500 Square Wave o TJ