FGHL40S65UQ

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGHL40S65UQ Product Preview Field Stop Trench IGBT 40 A, 650 V Using the novel field stop generation IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and microwave oven. www.onsemi.com 40 A, 650 V VCE(sat) = 1.36 V (Typ.) Features • • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.36 V (Typ.) @IC = 40 A 100% of the Parts tested for ILM (Note 1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant IGBT with Monolithic Reverse Conducting Diode C G E G Typical Applications C • Induction Heating • Microwave Oven • Soft Switching Application E TO−247−3L CASE 340CX MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 ±30 V IC 80 40 A Pulsed Collector Current (Note 1) ILM 120 A Pulsed Collector Current (Note 2) ICM 120 A IF 40 20 A Pulsed Diode Maximum Forward Current IFM 120 A Maximum Power Dissipation @TC = 25°C @TC = 100°C PD 231 115 W Operating Junction / Storage Temperature Range TJ, TSTG −55 to +175 °C TL 260 °C Collector Current @TC = 25°C @TC = 100°C Diode Forward Current @TC = 25°C @TC = 100°C Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 7 W, Inductive Load, 100% Tested. 2. Repetitive rating: pulse width limited by max. Junction temperature. © Semiconductor Components Industries, LLC, 2018 May, 2019 − Rev. P0 1 &Y&Z&3&K FGHL40S65 UQ &Y &Z &3 &K FGHL40S65UQ = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Data Code = 2−Digit Lot Traceability Code = Specific Device Code ORDERING INFORMATION Device Package Shipping FGHL40S65UQ TO−247−3L 30 Units / Rail This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Publication Order Number: FGHL40S65UQ/D FGHL40S65UQ THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.65 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.69 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Test Conditions Parameter Symbol Min Typ Max Unit OFF CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES/ DTJ − 0.5 − V/°C Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA Gate−emitter threshold voltage VGE = VCE, IC = 40 mA VGE(th) 2.5 4.7 6.5 V Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCE(sat) − − 1.36 1.6 1.7 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 6054 − pF Coes − 36 − Cres − 30 − Qg − 306 − Qge − 30 − Qgc − 99 − td(on) − 32 − ON CHARACTERISTIC DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 400 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time TJ = 25°C VCC = 400 V, IC = 40 A, RG = 6 W VGE = 15 V Inductive Load tr − 20 − td(off) − 260 − tf − 13 − Turn−on switching loss EON − 1760 − Turn−off switching loss EOFF − 362 − Total switching loss ETS − 2122 − td(on) − 30 − tr − 28 − td(off) − 284 − tf − 56 − Turn−on switching loss EON − 2050 − Turn−off switching loss EOFF − 590 − Total switching loss ETS − 2640 − Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time TJ = 175°C VCC = 400 V, IC = 40 A, RG = 6 W VGE = 15 V Inductive Load Fall time www.onsemi.com 2 ns mJ ns mJ FGHL40S65UQ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Test Conditions Symbol Min Typ Max Unit VF − − 1.24 1.24 1.6 − V DIODE CHARACTERISTIC Forward voltage IF = 20 A IF = 20 A, TJ = 175°C Reverse Recovery Energy IF = 20 A, DlF/Dt = 200 A/ms EREC − 359 − mJ Diode Reverse Recovery Time IF = 20 A, DlF/Dt = 200 A/ms IF = 20 A, DlF/Dt = 200 A/ms, TJ = 175°C TRR − 319 430 − nS Diode Reverse Recovery Charge IF = 20 A, DlF/Dt = 200 A/ms IF = 20 A, DlF/Dt = 200 A/ms, TJ = 175°C QRR − 1853 3007 − nC www.onsemi.com 3 FGHL40S65UQ TYPICAL CHARACTERISTICS 120 20 V TJ = 25°C 15 V 12 V Collector Current, IC [A] Collector Current, IC [A] 120 10 V 80 VGE = 8 V 40 0 0 1 80 3 2 3 Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 3 Common Emitter VGE = 15 V TJ = 25°C TJ = 175°C 80 40 0 1 Common Emitter VGE = 15 V 2.5 2 40 A 1.5 IC = 20 A 0 2 80 A 3 −100 Collector−Emitter Voltage, VCE [V] −50 0 50 20 Collector−Emitter Voltage, VCE [V] Common Emitter TJ = 25°C 12 8 40 A 4 150 200 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 20 16 100 Collector−Emitter Case Temperature, TC [°C] Figure 3. Typical Saturation Voltage Characteristics Collector−Emitter Voltage, VCE [V] 1 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] Collector Current, IC [A] 0 Collector−Emitter Voltage, VCE [V] 120 0 VGE = 8 V 40 0 2 20 V 15 V 12 V 10 V TJ = 175°C 80 A IC = 20 A 0 Common Emitter TJ = 175°C 16 12 8 IC = 20 A 4 40 A 80 A 0 0 4 8 12 16 20 0 Gate−Emitter Voltage, VGE [V] 4 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 20 FGHL40S65UQ TYPICAL CHARACTERISTICS (continued) 15 Gate−Emitter Voltage, VGE[V] Capacitance [pF] VCC = 200 V Cies 10000 1000 Coes 100 Cres Common Emitter VGE = 0 V, f = 1 MHz TJ = 25°C 10 Common Emitter TJ = 25°C 12 300 V 400 V 9 6 3 0 1 1 10 30 0 80 160 240 320 Collector−Emitter Voltage, VCE [V] Gate Charge, QG [nC] Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 10000 100 td(off) Switching Time [ns] tr Switching Time [ns] 400 td(on) 10 Common Emitter VCC = 400 V, VGE = 15 V, Ic = 40 A TJ = 25°C TJ = 175°C 1000 tf 100 Common Emitter VCC = 400 V, VGE = 15 V, Ic = 40 A TJ = 25°C TJ = 175°C 10 1 1 0 10 20 30 40 0 50 10 20 30 40 50 Gate Resistance, RG [ W] Gate Resistance, RG [W] Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−Off Characteristics vs. Gate Resistance 1000 5000 EOFF Switching Time [ns] Switching Loss [mJ] EON 1000 Common Emitter VCC = 400 V, VGE = 15V, V,RICG == 40 =15 6 WA TJC == 25°C 25°C TJC == 175°C 175°C 100 tr 100 td(on) Common Emitter VCC = 400 V, VGE = 15 V, RG = 6 W TJ = 25°C TJ = 175°C 10 1 5 15 25 40 0 50 30 60 90 120 150 Gate Resistance, RG [W] Collector Current, IC [A] Figure 11. Switching Loss vs Gate Resistance Figure 12. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGHL40S65UQ TYPICAL CHARACTERISTICS (continued) 10000 1000 EON 100 Common Emitter Vcc = 400 V VGE = 15 V, RG = 6 W TJ = 25°C TJ = 175°C 10 1 0 30 60 Common Emitter Vcc = 400 V VGE = 15 V, RG = 6 W TJ = 25°C TJ = 175°C 100 10 120 0 60 90 120 150 Figure 13. Turn−Off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 300 Square Wave TJ ≤ 175°C, D = 0.5, VCE = 400 V, VGE = 15/0 V, RG = 6 W TJ = 25°C 200 100 TJ = 75°C 150 TJ = 100°C 100 10 ms DC 1 ms 10 ms 1 *Notes: 1. TJ = 25°C 2. TJ = 175°C 3. Single Pulse 0.1 0 1000 10000 100000 1 1000000 100 1000 Collector−Emitter Voltage, VCE [V] Figure 15. Load Current vs Frequency Figure 16. SOA Characteristics (FBSOA) 16 TJ = 175°C TJ = 75°C 10 0 10 Switching Frequency, f [Hz] TJ = 25°C 100 100 ms 10 50 1 30 Collector Current, IC [A] Collector Current, IC [A] Collector Current, IC [A] 90 EOFF 1000 Collector Current, IC [A] 250 Forward Current, IF [A] Switching Loss [mJ] tf Reverse Recovery Current, IRR [A] Switching Time [ns] td(off) 1 2 3 4 14 di/dt = 200 A/ms 12 10 6 4 TJ = 25°C TJ = 175°C 2 0 5 di/dt = 100 A/ms 8 0 10 20 30 Forward Voltage, VF [V] Forward Current, IF [A] Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 6 40 FGHL40S65UQ TYPICAL CHARACTERISTICS (continued) 4000 600 Stored Recovery Charge , QRR [nC] di/dt = 200 A/ms 500 400 300 di/dt = 100 A/ms 200 100 0 10 20 30 3500 3000 di/dt = 200 A/ms 2500 di/dt = 100 A/ms 2000 1500 1000 TJ = 25°C TJ = 175°C 500 0 40 0 10 Forward Current, IF [A] 20 Figure 20. Stored Charge 1 0.5 0.1 0.2 0.1 PDM t1 t2 0.05 0.02 0.01 Single Pulse 0.01 10−5 10−4 Duty Factor, D = t1/t2 Paek TJ = Pdm × Zthjc + TC 10−3 10−2 10−1 100 101 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of IGBT 5 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Paek TJ = Pdm × Zthjc + TC Single Pulse 0.01 10−5 10−4 30 Forward Current, IF [A] Figure 19. Reverse Recovery Time Thermal Response [Zthjc] 0 TJ = 25°C TJ = 175°C Thermal Response [Zthjc] Reverse Recovery Time, tRR [ns] 700 10−3 10−2 10−1 100 Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 101 40 FGHL40S65UQ TO−247−3LD CASE 340CX ISSUE O www.onsemi.com 8 FGHL40S65UQ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative FGHL40S65UQ/D