Field Stop Trench IGBT
650 V, 40 A
FGHL40T65MQD
Field stop 4th generation mid speed IGBT technology and full
current rated copak Diode technology.
Features
•
•
•
•
•
•
•
•
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Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.) @ IC = 40 A
100% of the Parts are Tested for ILM (Note 2)
Smooth & Optimized Switching
Tight Parameter Distribution
RoHS Compliant
BVCES
VCE(sat) TYP
IC MAX
650 V
1.45 V
40 A
C
Typical Applications
G
• Solar Inverter
• UPS, ESS
• PFC, Converters
E
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Collector−to−Emitter Voltage
VCES
650
V
Gate−to−Emitter Voltage
VGES
±20
V
VGES
±30
V
IC
80
A
Transient Gate−to−Emitter Voltage
Collector Current (Note 1)
TC = 25°C
TC = 100°C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1)
TC = 25°C
Non−Repetitive Forward Surge Current
(Half−Sine Pulse, tp = 8.3 ms, TC = 25°C)
(Half−Sine Pulse, tp = 8.3 ms, TC = 150°C)
Maximum Power Dissipation
TC = 25°C
ILM
160
A
ICM
160
A
IF
40
A
Maximum Lead Temperature for Soldering
Purposes (1/8″ from case for 5 s)
IFM
IF,SM
PD
160
February, 2020 − Rev. 1
MARKING DIAGRAM
&Z&3&K
FGHL
40T65MQD
A
A
85
80
W
238
119
TJ, Tstg
−55 to
+175
°C
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 14 W, Inductive Load, 100% Tested
3. Repetitive rating: Pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2019
E
TO−247 LONG LEADS
CASE 340CX
25
TC = 100°C
Operating Junction and Storage Temperature
Range
C
40
TC = 65°C
Pulsed Diode Maximum Forward Current
G
1
&Z
&3
&K
FGHL40T65MQD
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FGHL40T65MQD
TO−247−3L
30 Units / Rail
Publication Order Number:
FGHL40T65MQD/D
FGHL40T65MQD
Table 1. THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal Resistance Junction−to−Case, for IGBT
Parameter
RθJC
0.63
°C/W
Thermal Resistance Junction−to−Case, for Diode
RθJC
1.6
Thermal Resistance Junction−to−Ambient
RθJA
40
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 1 mA
BVCES
650
−
−
V
Temperature Coefficient of
Breakdown Voltage
VGE = 0 V, IC = 1 mA
DBVCES/
DTJ
−
0.6
−
V/°C
Collector−emitter cut−off current,
gate−emitter short−circuited
VGE = 0 V, VCE = 650 V
ICES
−
−
250
mA
Gate leakage current, collector−emitter short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
±400
nA
VGE = VCE, IC = 40 mA
VGE(th)
3.0
4.5
6.0
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCE(sat)
−
−
1.45
1.77
1.8
−
V
VCE = 30 V, VGE = 0 V, f = 1 MHz
Cies
−
2756
−
pF
Output capacitance
Coes
−
64
−
Reverse transfer capacitance
Cres
−
9
−
Qg
−
86
−
Gate−to−Emitter charge
Qge
−
16
−
Gate−to−Collector charge
Qgc
−
21
−
td(on)
−
20
−
tr
−
13
−
td(off)
−
116
−
tf
−
51
−
Turn−on switching loss
Eon
−
0.33
−
Turn−off switching loss
Eoff
−
0.26
−
OFF CHARACTERISTIC
ON CHARACTERISTIC
Gate−emitter threshold voltage
Collector−emitter saturation voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Gate charge total
VCE = 400 V, IC = 40 A, VGE = 15 V
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
TC = 25°C
VCC = 400 V, IC = 20 A
RG = 10 W
VGE = 15 V
Inductive Load
Fall time
Total switching loss
Ets
−
0.59
−
td(on)
−
22
−
tr
−
30
−
td(off)
−
109
−
tf
−
46
−
Turn−on switching loss
Eon
−
0.86
−
Turn−off switching loss
Eoff
−
0.52
−
Total switching loss
Ets
−
1.38
−
Turn−on delay time
Rise time
Turn−off delay time
TC = 25°C
VCC = 400 V, IC = 40 A
RG = 10 W
VGE = 15 V
Inductive Load
Fall time
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2
ns
mJ
ns
mJ
FGHL40T65MQD
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
td(on)
−
20
−
ns
tr
−
14
−
td(off)
−
127
−
tf
−
76
−
Turn−on switching loss
Eon
−
0.60
−
Turn−off switching loss
Eoff
−
0.42
−
Total switching loss
Ets
−
1.02
−
td(on)
−
20
−
tr
−
32
−
td(off)
−
119
−
tf
−
63
−
Turn−on switching loss
Eon
−
1.28
−
Turn−off switching loss
Eoff
−
0.77
−
Total switching loss
Ets
−
2.05
−
IF = 40 A, TC = 25°C
IF = 40 A, TC = 175°C
VFM
−
−
2.55
2.3
2.85
−
V
Reverse Recovery Energy
IF = 40 A, dlF/dt = 200 A/ms, TC = 175°C
Erec
−
56
−
mJ
Diode Reverse Recovery Time
IF = 40 A, dlF/dt = 200 A/ms, TC = 25°C
IF = 40 A, dlF/dt = 200 A/ms, TC = 175°C
Trr
−
33
222
−
ns
Diode Reverse Recovery Charge
IF = 40 A, dlF/dt = 200 A/ms, TC = 25°C
IF = 40 A, dlF/dt = 200 A/ms, TC = 175°C
Qrr
−
47
759
−
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
TC = 175°C
VCC = 400 V, IC = 20 A
RG = 10 W
VGE = 15 V
Inductive Load
Fall time
Turn−on delay time
Rise time
Turn−off delay time
TC = 175°C
VCC = 400 V, IC = 40 A
RG = 10 W
VGE = 15 V
Inductive Load
Fall time
mJ
ns
mJ
DIODE CHARACTERISTIC2.5
Diode Forward Voltage
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL40T65MQD
TYPICAL CHARACTERISTICS
200
200
20V
T C = 25°C
Collector Current, I C [A]
Collector Current, IC [A]
15V
12V
150
10V
V GE = 8V
100
50
0
0
1
2
3
4
Collector−Emitter Voltage, VCE [V]
0
1
2
3
4
Collector−Emitter Voltage, V CE [V]
5
Figure 2. Typical Output Characteristics
(TJ = 1755C)
3.0
Common Emitter
V GE = 15V
T C = 255C
T C = 1755C
150
Collector−Emitter Voltage, VCE [V]
Collector Current, I C [A]
V GE = 8V
50
0
100
50
0
1
2
3
4
Collector−Emitter Voltage, VCE [V]
20
Collector−Emitter Voltage, VCE [V]
12
80A
40A
IC = 20A
0
4
40A
IC = 20A
−50
0
50
100
150
200
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
16
4
80A
2.0
Collector−Emitter Case Temperature, TC [ 5C]
Common Emitter
T C = 25°C
8
Common Emitter
V GE = 15V
1.0
−100
5
Figure 3. Typical Saturation Voltage
Characteristics
Collector−Emitter Voltage, VCE [V]
10V
100
5
200
0
12V
150
Figure 1. Typical Output Characteristics
(TJ = 255C)
0
20V
T C = 175°C
15V
20
8
12
16
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE (TJ = 255C)
20
Common Emitter
T C = 175°C
16
12
IC = 20A
8
40A
80A
4
0
0
4
8
12
16
Gate−Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs. VGE (TJ = 1755C)
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4
20
FGHL40T65MQD
TYPICAL CHARACTERISTICS (continued)
15
10000
Common Emitter
T C = 255C
Gate −Emitter Voltage, VGE [V]
Cies
Capacitance [pF]
1000
100
Coes
10
C res
Common Emitter
VGE = 0V, f = 1Mhz
TC = 255C
1
10
Collector−Emitter Voltage, V CE [V]
300V
400V
9
6
3
0
0
1
30
Figure 7. Capacitance Characteristics
25
1000
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
V CC = 400V, VGE = 15V
IC = 40A
T C = 25°C
T C = 175°C
0
10
20
30
40
t d(off)
100
tf
10
50
Common Emitter
VCC = 400V, VGE = 15V,
IC = 40A
T C = 25°C
T C = 175°C
0
10
Gate Resistance, R g [ W]
Figure 9. Turn−On Characteristics
vs. Gate Resistance
Common Emitter
V CC = 400V, VGE = 15V,
RG = 10 W
T C = 25°C
T C = 175°C
100
10
25
50
t d(off)
tr
t d(on)
0
20
30
40
Gate Resistance, R g [ W]
Figure 10. Turn−Off Characteristics
vs. Gate Resistance
Switching Time [ns]
Switching Time [ns]
1000
1
100
50
75
Gate Charge, Q g [nC]
Figure 8. Gate Charge Characteristics
100
10
V CC = 200V
12
50
75
100
Collector Current, IC [A]
125
100
tf
10
150
Figure 11. Turn−On Characteristics
vs. Collector Current
Common Emitter
V CC = 400V, VGE = 15V,
R G = 10 W
T C = 25°C
T C = 175°C
0
25
50
75
100
Collector Current, IC [A]
125
Figure 12. Turn−Off Characteristics
vs. Collector Current
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5
150
FGHL40T65MQD
TYPICAL CHARACTERISTICS (continued)
10000
10000
E on
Switching Loss [uJ]
Switching Loss [uJ]
E on
1000
E off
100
0
10
Common Emitter
V CC = 400V, VGE = 15V,
IC = 40A
T C = 25°C
T C = 175°C
20
30
Gate Resistance, R g [ W]
1000
E off
100
0
50
40
Figure 13. Switching Loss vs. Gate Resistance
25
10
Reverse Recovery Current, I rr [A]
TC=1755C
T C =255C
10
TC =755C
Common Emitter
T C = 255C
T C = 755C
T C = 1755C
1
0
1
2
3
Forward Voltage, V F [V]
4
8
di/dt = 200A/uS
di/dt = 100A/uS
4
di/dt = 200A/uS
2
di/dt = 100A/uS
0
Reverse Recovery Charge, Q rr [nC]
Reverse Recovery Time, t rr [ns]
200
150
di/dt = 200A/uS
di/dt = 100A/uS
50
0
0
10
20
30
Forward Current, VF [V]
10
20
Forward Current, VF [V]
30
40
Figure 16. Reverse Recovery Current
T C= 1755C
100
150
6
0
5
T C = 255C
250
125
T C = 255C
TC = 1755C
Figure 15. Forward Characteristics
300
50
75
100
Collector Current, IC [A]
Figure 14. Switching Loss vs. Collector
Current
80
Forward Current, I F [A]
Common Emitter
V CC = 400V, VGE = 15V,
RG = 4.7
T C = 25°C
T C = 175°C
40
1000
T C = 25°C
TC= 175°C
800
600
400
di/dt = 200A/uS
di/dt = 100A/uS
200
0
0
10
20
30
Forward Current, VF [V]
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
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6
40
FGHL40T65MQD
TYPICAL CHARACTERISTICS (continued)
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
0.01
0.01
Single Pulse
10 −5
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + Tc
10 −4
10 −3
10 −2
10 −1
10 0
10 1
Rectangular Pulse Duration [sec]
Figure 19. Transient Thermal Impedance of IGBT
2
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
P DM
0.01 Single Pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + Tc
0.001
10 −5
10 −4
10 −3
10 −2
Rectangular Pulse Duration [sec]
10 −1
Figure 20. Transient Thermal Impedance of Diode
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7
10 0
10 1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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