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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Field Stop Trench IGBT
650 V, 50 A
FGHL50T65MQDTL4
Field stop 4th generation mid speed IGBT technology copacked
with full rated current diode.
Features
•
•
•
•
•
•
•
•
www.onsemi.com
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
100% of the Parts are Tested for ILM (Note 2)
Smooth and Optimized Switching
Tight Parameter Distribution
RoHS Compliant
50 A, 650 V
VCESat = 1.45 V
C
E1: Kelvin Emitter
E2: Power Emitter
G
Typical Applications
• Solar Inverter
• UPS, ESS
• PFC, Converters
E1
E2
MAXIMUM RATINGS
Parameter
Symbol Value
Unit
Collector to Emitter Voltage
VCES
650
V
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
VGES
±20
±30
V
IC
80
50
A
TO−247−4LD
CASE 340CJ
Pulsed Collector Current (Note 2)
ILM
200
A
MARKING DIAGRAM
Pulsed Collector Current (Note 3)
ICM
200
A
IF
60
50
A
Pulsed Diode Maximum Forward Current
IFM
200
A
Maximum Power Dissipation @ TC = 25°C
@ TC = 100°C
PD
268
134
W
Operating Junction and Storage Temperature
Range
TJ,
TSTG
−55 to
+175
°C
TL
260
°C
Collector Current (Note 1)
@ TC = 25°C
@ TC = 100°C
Diode Forward Current (Note 1) @ TC = 25°C
@ TC = 100°C
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. VCC = 400 V, VGE = 15 V, IC = 200 A, Inductive Load, 100% tested
3. Repetitive rating: pulse width limited by max. junction temperature
$Y&Z&3&K
FGHL50T65
MQDTL4
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= 3−Digit Date Code
&K
= 2−Digit Lot Traceability Code
FGHL50T65MQDTL4 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FGHL50T65MQDTL4 TO−247−4LD 30 Units / Tube
© Semiconductor Components Industries, LLC, 2020
April, 2021 − Rev. 0
1
Publication Order Number:
FGHL50T65MQDTL4/D
FGHL50T65MQDTL4
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.56
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.74
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector to Emitter Breakdown Voltage
VGE = 0 V,
IC = 1 mA
BVCES
650
−
−
V
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V,
IC = 1 mA
−
0.6
−
V/°C
Parameter
OFF CHARACTERISTICS
DBVCES
DTJ
Collector to Emitter Cut−off Current
VGE = 0 V,
VCE = 650 V
ICES
−
−
250
mA
Gate Leakage Current
VGE = 20 V,
VCE = 0 V
IGES
−
−
±400
nA
VGE = VCE, IC = 50 mA
VGE(th)
3.0
4.5
6.0
V
VGE = 15 V, IC = 50 A, TJ = 25°C
VGE = 15 V, IC = 50 A, TJ = 175°C
VCE(sat)
−
−
1.45
1.65
1.8
−
V
VCE = 30 V,
VGE = 0 V,
f = 1 MHz
Cies
−
3335
−
pF
Coes
−
105
−
Cres
−
11
−
ON CHARACTERISTICS
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge Total
VCE = 400 V,
IC = 50 A,
VGE = 15 V
Qg
−
99
−
Qge
−
17
−
Qgc
−
24
−
td(on)
−
45
−
tr
−
18
−
td(off)
−
360
−
tf
−
51
−
Turn−on Switching Loss
Eon
−
0.44
−
Turn−off Switching Loss
Eoff
−
0.35
−
Total Switching Loss
Ets
−
0.79
−
td(on)
−
50
−
Gate to Emitter Charge
Gate to Collector Charge
nC
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Delay Time
Rise Time
TJ = 25°C,
VCC = 400 V,
IC = 25 A,
RG = 30 W,
VGE = 15 V
TJ = 25°C,
VCC = 400 V,
IC = 50 A,
RG = 30 W,
VGE = 15 V
tr
−
27
−
td(off)
−
336
−
tf
−
37
−
Turn−on Switching Loss
Eon
−
1.00
−
Turn−off Switching Loss
Eoff
−
0.85
−
Total Switching Loss
Ets
−
1.85
−
Turn−off Delay Time
Fall Time
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2
ns
mJ
ns
mJ
FGHL50T65MQDTL4
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
td(on)
−
40
−
ns
tr
−
22
−
td(off)
−
389
−
tf
−
85
−
Turn−on Switching Loss
Eon
−
0.84
−
Turn−off Switching Loss
Eoff
−
0.61
−
Total Switching Loss
Ets
−
1.45
−
td(on)
−
43
−
tr
−
35
−
td(off)
−
365
−
tf
−
72
−
Turn−on Switching Loss
Eon
−
1.60
−
Turn−off Switching Loss
Eoff
−
1.30
−
Total Switching Loss
Ets
−
2.90
−
VF
−
1.65
2.1
−
1.55
−
Erec
−
65
−
mJ
Trr
−
44
−
ns
Qrr
−
387
−
nC
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
TJ = 175°C,
VCC = 400 V,
IC = 25 A,
RG = 30 W,
VGE = 15 V
TJ = 175°C,
VCC = 400 V,
IC = 50 A,
RG = 30 W,
VGE = 15 V
mJ
ns
mJ
DIODE CHARACTERISTICS
Diode Forward Voltage
IF = 50 A, TJ = 25°C
IF = 50 A, TJ = 175°C
V
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Energy
Diode Reverse Recovery Time
TJ = 25°C, VCE = 400 V, IF = 25 A,
diF/dt = 1000 A/ms
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Irr
−
18
−
A
Erec
−
128
−
mJ
Trr
−
79
−
ns
Diode Reverse Recovery Charge
Qrr
−
681
−
nC
Diode Reverse Recovery Current
Irr
−
17
−
A
Erec
−
380
−
mJ
Reverse Recovery Energy
Diode Reverse Recovery Time
Reverse Recovery Energy
Diode Reverse Recovery Time
TJ = 25°C, VCE = 400 V, IF = 50 A,
diF/dt = 1000 A/ms
TJ = 175°C, VCE = 400 V, IF = 25 A,
diF/dt = 1000 A/ms
Trr
−
102
−
ns
Diode Reverse Recovery Charge
Qrr
−
1482
−
nC
Diode Reverse Recovery Current
Irr
−
29
−
A
Erec
−
544
−
mJ
Trr
−
135
−
ns
Diode Reverse Recovery Charge
Qrr
−
2023
−
nC
Diode Reverse Recovery Current
Irr
−
30
−
A
Reverse Recovery Energy
Diode Reverse Recovery Time
TJ = 175°C, VCE = 400 V, IF = 50 A,
diF/dt = 1000 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL50T65MQDTL4
TYPICAL CHARACTERISTICS
15 V
12 V
150
200
TJ = 25°C
20 V
VGE = 8 V
10 V
100
50
0
0
TJ = 175°C
1
2
3
4
12 V
150
10 V
VGE = 8 V
100
50
0
5
0
1
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
IC, Collector Current (A)
100
100
50
0
0
1
2
3
4
80
5
60
40
20
0
5
0
2
4
6
8
10
VGE, Gate−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Typical Transfer Characteristics
10000
Common Emitter
VGE = 15 V
Cies
1000
C, Capacitance (pF)
VCE(Sat), Collector−Emitter Saturation (V)
4
Common Emitter
VCE = 15 V
TJ = 25°C
TJ = 175°C
VCE, Collector−Emitter Voltage (V)
2.5
3
Figure 2. Typical Output Characteristics (TJ = 1755C)
Common Emitter
VGE = 15 V
TJ = 25°C
TJ = 175°C
150
2
VCE, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics (TJ = 255C)
200
20 V
15 V
IC, Collector Current (A)
IC, Collector Current (A)
200
2.0
100 A
1.5
50 A
100
Coes
10
Cres
Common Emitter
VGE = 0 V, f = 1 MHz
IC = 25 A
1.0
−100
−50
0
50
100
150
1
200
1
10
VCE, Collector−Emitter Voltage (V)
TJ, Junction Temperature (°C)
Figure 6. Capacitance Characteristics
Figure 5. Saturation Voltage vs. Junction Temperature
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4
30
FGHL50T65MQDTL4
TYPICAL CHARACTERISTICS (continued)
1000
Common Emitter
IC = 50 A
12
VCC = 200 V
IC, Collector Current (A)
VGE, Gate−Emitter Voltage (V)
15
300 V
9
400 V
6
3
0
0
20
40
60
80
DC
100 ms
1 ms
10 ms
10
*Notes:
1. TC = 25°C
2. TJ = 175°C
3. Single Pulse
1
0.1
100
10 ms
100
1
10
Qg, Gate Charge (nC)
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 50 A
TJ = 25°C
TJ = 175°C
td(on)
Switching Time (ns)
Switching Time (ns)
Figure 8. SOA Characteristics
1000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 50 A
TJ = 25°C
TJ = 175°C
1000
VCE, Collector−Emitter Voltage (V)
Figure 7. Gate Charge Characteristics
100
100
tr
td(off)
100
tf
10
0
10
20
30
40
10
50
0
10
Figure 9. Turn−on Characteristics vs. Gate Resistance
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 30 W
TJ = 25°C
TJ = 175°C
100
1
tr
td(on)
0
30
60
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 30 W
TJ = 25°C
TJ = 175°C
100
10
90
30
40
50
Figure 10. Turn−off Characteristics vs. Gate Resistance
Switching Time (ns)
Switching Time (ns)
1000
20
Rg, Gate Resistance (W)
Rg, Gate Resistance (W)
120
td(off)
10
150
tf
0
IC, Collector Current (A)
30
60
90
120
150
IC, Collector Current (A)
Figure 11. Turn−on Characteristics vs. Collector Current
Figure 12. Turn−off Characteristics vs. Collector Current
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FGHL50T65MQDTL4
TYPICAL CHARACTERISTICS (continued)
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 50 A
TJ = 25°C
TJ = 175°C
10
Eon
Switching Loss (mJ)
Switching Loss (mJ)
10
1
Eoff
0.1
0
10
20
30
40
Eon
1
0.1
50
Eoff
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 30 W
TJ = 25°C
TJ = 175°C
0
30
60
Irr, Reverse Recovery Current (A)
IF, Forward Current (A)
35
100
50
0
0
1
2
3
4
30
25
15
10
5
0
400
5
100
VR = 400 V
IF = 50 A
TJ = 25°C
TJ = 175°C
1000
50
800
1000
1200
2000
1500
600
1000
2500
VR = 400 V
IF = 50 A
TJ = 25°C
TJ = 175°C
Qrr, Reverse Recovery Charge (nC)
trr, Reverse Recovery Time (ns)
800
Figure 16. Reverse Recovery Current
150
0
400
600
diF/dt, Diode Current Slop (A/ms)
Figure 15. Forward Characteristics
200
VR = 400 V
IF = 50 A
TJ = 25°C
TJ = 175°C
20
VF, Forward Voltage (V)
250
150
Figure 14. Switching Loss vs. Collector Current
Common Emitter
TJ = 25°C
TJ = 175°C
150
120
IC, Collector Current (A)
Rg, Gate Resistance (W)
Figure 13. Switching Loss vs. Gate Resistance
200
90
500
0
400
1200
diF/dt, Diode Current Slop (A/ms)
600
800
1000
diF/dt, Diode Current Slop (A/ms)
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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6
1200
FGHL50T65MQDTL4
TYPICAL CHARACTERISTICS (continued)
Zthjc, Thermal Response (K/W)
1
0.5
0.1
PDM
t1
0.2
0.1
0.05
R1
0.02
0.01
0.01
R2
C1 = t1 / R1 C2 = t2 / R2
i:
1
2
3
4
ri [K/W]: 0.0546
0.1050
0.1612
0.0849
t [s]:
7.970E−5 5.307E−4 5.680E−3 2.391E−2
Single Pulse
0.001
10−6
t2
Duty Factor, D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
10−5
10−4
10−3
10−2
10−1
100
101
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
Zthjc, Thermal Response (K/W)
0.5
PDM
0.2
0.1
t1
0.1
Duty Factor, D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
0.05
0.02
R1
0.01
0.01
t2
R2
Single Pulse
C1 = t1 / R1 C2 = t2 / R2
0.001
10−6
i:
1
2
3
4
ri [K/W]: 0.0601
0.1621
0.1795
0.1784
t [s]:
1.271E−5 4.801E−4 4.265E−3 3.207E−2
10−5
10−4
10−3
10−2
10−1
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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7
100
101
FGHL50T65MQDTL4
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
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8
FGHL50T65MQDTL4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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