FGHL50T65SQ

FGHL50T65SQ IGBT for PFC Applications 650 V, 50 A, TO-247-3L Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant www.onsemi.com BVCES VCE(sat) TYP IC MAX 650 V 1.6 V 200 A C Typical Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage VGES ±20 V Transient Gate−to−Emitter Voltage VGES ±30 V IC 100 A Collector Current TC = 25°C TC = 100°C 50 Pulsed Collector Current (Note 2) TC = 25°C ICM 200 A Maximum Power Dissipation TC = 25°C PD 268 W TC = 100°C Operating Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 s) E TO−247 LONG LEADS CASE 340CX 134 MARKING DIAGRAM TJ, Tstg −55 to +175 °C TL 260 °C $Y&Z&3&K FGHL50T65 SQ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 200 A, Inductive Load 2. Repetitive rating: Pulse width limited by max. Junction temperature 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted $Y &Z &3 &K FGHL50T65SQ = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digit Lot Traceability Code = Specific Device Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2018 December, 2018 − Rev. 0 1 Device Package Shipping FGHL50T65SQ TO−247−3L 30 Units / Rail Publication Order Number: FGHL50T65SQ/D FGHL50T65SQ Table 1. THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Case − Steady State Parameter RθJC 0.56 °C/W Junction−to−Ambient − Steady State (Note 4) RθJA 40 4. Repetitive rating: Pulse width limited by max. Junction temperature ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 1 mA 650 Temperature Coefficient of Breakdown Voltage DVCES/ DTJ VGE = 0 V, IC = 1 mA Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V 250 mA G−E Leakage Current IGES VGE = VGES, VCE = 0 V ±400 nA OFF CHARACTERISTICS V 0.6 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGE(th) VGE = VCE, IC = 50 mA 4.5 6.4 V Collector to Emitter Saturation Voltage VCE(sat) IC = 50 A, VGE = 15 V TC = 25°C 2.6 1.6 2.1 V IC = 50 A, VGE = 15 V TC = 175°C 1.92 V VCE = 30 V, VGE = 0 V, f = 1 MHz 3209 pF DYNAMIC CHARACTERISTIC Input Capacitance Cies Output Capacitance Coes 42 Reverse Transfer Capacitance Cres 12 SWITCHING CHARACTERISTIC tr VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25°C td(off) FWD: FGH50T65SQD 19 ns 13 ns 93 ns tf 6.4 ns Turn−On Switching Loss Eon 410 mJ Turn−Off Switching Loss Eoff 88 mJ Total Switching Loss Ets 498 mJ Turn−On Delay Time td(on) 18 ns 15 ns 102 ns Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175°C td(off) FWD: FGH50T65SQD tf 8 ns Turn−On Switching Loss Eon 641 mJ Turn−Off Switching Loss Eoff 203 mJ Total Switching Loss Ets 844 mJ Total Gate Charge Qg 99 nC Gate−to−Emitter Charge Qge 17 nC Gate−to−Collector Charge Qgc 23 nC VCE = 400 V, IC = 50 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FGHL50T65SQ TYPICAL CHARACTERISTICS TC = 25 oC 150 200 20V 15V 12V 10V 100 50 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 150 VGE = 8V 100 50 0 5 Figure 1. Typical Output Characteristics 3 Collector−Emitter Voltage, VCE [V] Common Emitter VGE = 15V Collector Current, IC [A] o TC = 25 C o TC = 175 C 100 50 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 2 50A IC = 25A 1 −100 −50 0 50 100 150 200 Collector−Emitter Case Temperature, TC [ oC] 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter Common Emitter 25 oC Collector−Emitter Voltage, VCE [V] TC = 16 12 IC = 25A 8 50A 100A 4 4 8 12 16 Gate−Emitter Voltage, VGE [V] 5 Common Emitter VGE = 15V 20 20 Collector−Emitter Voltage, VCE [V] 1 2 3 4 Collector−Emitter Voltage, VCE [V] 100A Figure 3. Typical Saturation Voltage Characteristics 0 0 Figure 2. Typical Output Characteristics 200 150 20V 15V 12V 10V TC = 175 oC VGE = 8V Collector Current, IC [A] Collector Current, IC [A] 200 TC = 175 oC 16 12 Figure 5. Saturation Voltage vs. VGE 50A 100A 4 0 20 IC = 25A 8 4 8 12 16 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs. VGE www.onsemi.com 3 FGHL50T65SQ TYPICAL CHARACTERISTICS 10000 15 Gate−Emitter Voltage, VGE [V] C ies Capacitance [pF] 1000 100 C oes Cres 10 Common Emitter VGE = 0V, f = 1MHz TC = 25 o C 1 1 10 Collector−Emitter Voltage, VCE [V] TC = 25 oC 12 400V VCC = 200V 9 300V 6 3 0 100 Common Emitter Figure 7. Capacitance Characteristics 0 20 40 60 80 Gate Charge, Q g [nC] 100 Figure 8. Gate Charge Characteristics 1000 100 tr Switching Time [ns] Switching Time [ns] td(off) td(on) Common Emitter VCC = 400V, V GE = 15V IC = 50A 10 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 50A o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 5 0 10 20 30 40 Gate Resistance, RG [ W ] 10 50 Figure 9. Turn−on Characteristics vs. Gate Resistance 0 10 20 30 40 Gate Resistance, RG [ W] 50 Figure 10. Turn−off Characteristics vs. Gate Resistance 200 5000 Common Emitter VGE = 15V, RG = 4.7 W o TC = 175 C Switching Time [ns] Switching Loss [uJ] 1000 Eoff o TC = 25 C 100 Eon Common Emitter VCC = 400V, VGE = 15V IC = 50A tr td(on) o TC = 25 C o TC = 175 C 100 0 10 20 30 40 Gate Resistance, RG [ W ] 10 50 0 25 50 75 100 125 150 Collector Current, IC [A] Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 4 FGHL50T65SQ TYPICAL CHARACTERISTICS 10000 500 Eon tf Switching Loss [uJ] Switching Time [ns] 100 td(off) 10 Common Emitter VGE = 15V, RG = 4.7 W Common Emitter VGE = 15V, RG = 4.7 W o o TC = 25 C TC = 175 C 0 25 50 75 100 125 Collector Current, I C [A] 50 150 0 25 75 100 125 150 Figure 14. Switching Loss vs. Collector Current Square Wave 100 o TJ