IGBT - Field Stop, Trench
75 A, 650 V
FGHL75T65LQDT
Description
Field stop 4th generation Low Vce(sat) IGBT technology and Full
current rated copak Diode technology.
Features
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 75 A
100% Of The Part Are Tested For ILM (Note 2)
Smooth & Optimized Switching
Tight Parameter Distribution
Co−Packed With Soft And Fast Recovery Diode
RoHS Compliant
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VCES
IC
VCE(Sat)
650 V
75 A
1.15 V
C
G
E
Typical Applications
• Solar Inverter
• UPS, ESS
• PFC, Converters
G
C
E
TO−247−3L
CASE 340CX
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Collector to Emitter Voltage
VCES
650
V
Gate to Emitter Voltage
VGES
±20
V
Transient Gate to Emitter Voltage
Collector Current @ TC = 25°C (Note 1)
±30
IC
Collector Current @ TC = 100°C
A
80
ILM
300
A
Pulsed Collector Current (Note 3)
ICM
300
A
IF
80
A
Diode Forward Current @ TC = 100°C
75
Pulsed Diode Maximum Forward Current
IFM
300
A
Maximum Power Dissipation @ TC = 25°C
PD
469
W
TJ,
TSTG
−55 to
+175
°C
TL
260
°C
Maximum Power Dissipation @ TC = 100°C
Operating Junction Temperature /
Storage Temperature Range
Maximum Lead Temp. For soldering
Purposes, ⅛” from case for 5 seconds
234
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire.
2. VCC = 400 V, VGE = 15 V, IC = 300 A, Inductive Load, 100% Tested.
3. Repetitive rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2021
June, 2021 − Rev. 0
$Y&Z&3&K
FGHL
75T65LQDT
75
Pulsed Collector Current (Note 2)
Diode Forward Current @ TC = 25°C
(Note 1)
MARKING DIAGRAM
1
$Y
&Z
&3
&K
FGHL75T65LQDT
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
= 2−Digit Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FGHL75T65LQDT
TO−247−3L
30 Units / Rail
Publication Order Number:
FGHL75T65LQDT/D
FGHL75T65LQDT
THERMAL CHARACTERISTICS
Symbol
Value
Units
Thermal Resistance Junction to Case, for IGBT
Parameter
RqJC
0.32
_C/W
Thermal Resistance Junction to Case, for Diode
RqJC
0.6
_C/W
Thermal Resistance Junction to Ambient
RqJA
40
_C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
VGE = 0 V, IC = 1mA
BVCES
650
−
−
V
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1mA
DBVCES
/DTJ
−
0.6
−
V/_C
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
VGE = 0 V, VCE = 650 V
ICES
−
−
250
mA
Gate Leakage Current, Collector−emitter
Short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
±400
nA
VGE = VCE, IC = 75 mA
VGE(th)
3.0
4.5
6.0
V
VGE = 15 V, IC = 75 A, TJ = 25_C
VCE(sat)
−
1.15
1.35
V
−
1.22
−
Cies
−
15300
−
Output Capacitance
Coes
−
181
−
Reverse Transfer Capacitance
Cres
−
68
−
Qg
−
793
−
Gate to Emitter Charge
Qge
−
72
−
Gate to Collector Charge
Qgc
−
248
−
td(on)
−
45
−
tr
−
20
−
td(off)
−
608
−
tf
−
160
−
Turn−on Switching Loss
Eon
−
0.78
−
Turn−off Switching Loss
Eoff
−
1.36
−
Total Switching Loss
Ets
−
2.14
−
td(on)
−
48
−
tr
−
40
−
td(off)
−
568
−
Parameter
OFF CHARACTERISTICS
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
VGE = 15 V, IC = 75 A, TJ = 175_C
DYNAMIC CHARACTERISTICS
Input Capacitance
Gate Charge Total
VCE = 30 V, VGE = 0 V, f = 1 MHz
VCE = 400 V, IC = 75 A, VGE = 15 V
pF
nC
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
Turn−off Delay Time
TJ = 25_C
VCC = 400 V, IC = 37.5 A
Rg = 4.7 W
VGE = 15 V
Fall Time
Turn−on Delay Time
Rise Time
Turn−off Delay Time
TJ = 25_C
VCC = 400 V, IC = 75 A
Rg = 4.7 W
VGE = 15 V
Fall Time
tf
−
128
−
Turn−on Switching Loss
Eon
−
1.88
−
Turn−off Switching Loss
Eoff
−
2.38
−
Total Switching Loss
Ets
−
4.26
−
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2
ns
mJ
ns
mJ
FGHL75T65LQDT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
TJ = 175_C
VCC = 400 V, IC = 37.5 A
Rg = 4.7 W
VGE = 15 V
td(on)
−
44
−
ns
tr
−
24
−
td(off)
−
680
−
tf
−
256
−
Turn−on Switching Loss
Eon
−
1.54
−
Turn−off Switching Loss
Eoff
−
2.11
−
Total Switching Loss
Ets
−
3.65
−
td(on)
−
44
−
tr
−
44
−
td(off)
−
632
−
tf
−
184
−
Turn−on Switching Loss
Eon
−
3.14
−
Turn−off Switching Loss
Eoff
−
3.58
−
Total Switching Loss
Ets
−
6.72
−
VF
−
1.65
2.1
−
1.55
−
Erec
−
105
−
mJ
Trr
−
59
−
ns
Reverse Recovery Charge
Qrr
−
574
−
nC
Reverse Recovery Current
Irr
−
20
−
A
Erec
−
152
−
mJ
Trr
−
87
−
ns
Reverse Recovery Charge
Qrr
−
794
−
nC
Reverse Recovery Current
Irr
−
18
−
A
Erec
−
550
−
mJ
Trr
−
119
−
ns
Reverse Recovery Charge
Qrr
−
2154
−
nC
Reverse Recovery Current
Irr
−
36
−
A
Erec
−
764
−
mJ
Trr
−
145
−
ns
Reverse Recovery Charge
Qrr
−
2947
−
nC
Reverse Recovery Current
Irr
−
40
−
A
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Delay Time
Rise Time
Turn−off Delay Time
TJ = 175_C
VCC = 400 V, IC = 75 A
Rg = 4.7 W
VGE = 15 V
Fall Time
mJ
ns
mJ
DIODE CHARACTERISTICS
Diode Forward Voltage
IF = 75 A, TJ = 25_C
IF = 75 A, TJ = 175_C
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Energy
Reverse Recovery Time
TJ = 25_C,
VR = 400 V, IF = 37.5 A,
diF/dt = 1000 A/ms
TJ = 25_C,
VR = 400 V, IF = 75 A,
diF/dt = 1000 A/ms
TJ = 175_C,
VR = 400 V, IF = 37.5 A,
diF/dt = 1000 A/ms
TJ = 175_C,
VR = 400 V, IF = 75 A,
diF/dt = 1000 A/ms
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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FGHL75T65LQDT
TYPICAL CHARACTERISTICS
300
20 V
15 V
12 V
10 V
250
200
IC, Collector Current (A)
IC, Collector Current (A)
300
VGE = 8 V
150
100
50
0
0
0.5
1
1.5
20 V
15 V
12 V
10 V
250
200
VGE = 8 V
150
100
50
0
2
0
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
150
100
50
0
VCE(Sat), Collector−Emitter Saturation (V)
150
0
0.5
1
1.5
2
2.5
2
2.5
3
Common Emitter
VCE = 20 V
TJ = 25°C
TJ = 175°C
125
100
75
50
25
0
3
0
2
4
6
8
VCE, Collector−Emitter Voltage (V)
VGE, Gate−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Typical Transfer Characteristics
10
2.0
Common Emitter
VGE = 15 V
150 A
1.5
75 A
1.0
IC = 40 A
0.5
−100
−50
0
Cies
10000
C, Capacitance (pF)
IC, Collector Current (A)
200
1.5
Figure 2. Typical Output Characteristics
(TJ = 1755C)
Common Emitter
VGE = 15 V
TJ = 25°C
TJ = 175°C
250
1
VCE, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
(TJ = 255C)
300
0.5
50
100
150
1000
Coes
100
10
200
Cres
Common Emitter
VGE = 0 V, f = 1 MHz
1
10
VCE, Collector−Emitter Voltage (V)
TJ, Junction Temperature (°C)
Figure 5. Saturation Voltage vs. Junction Temperature
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4
Figure 6. Capacitance Characteristics
30
FGHL75T65LQDT
TYPICAL CHARACTERISTICS (continued)
1000
Common Emitter
IC = 75 A
12
VCC = 200 V
IC, Collector Current (A)
VGE, Gate−Emitter Voltage (V)
15
300 V
9
400 V
6
3
0
0
200
400
600
100
DC
10
1 ms
10 ms
*Notes:
1. TJ = 25°C
2. TJ = 175°C
3. Single Pulse
1
0.1
800
10 ms
100 ms
1
Qg, Gate Charge (nC)
10
100
1000
VCE, Collector−Emitter Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
td(on)
Switching Time (ns)
Switching Time (ns)
10000
100
tr
10
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 75 A
TJ = 25°C
TJ = 175°C
0
10
20
30
40
td(off)
1000
100
10
50
0
10
Rg, Gate Resistance (W)
50
100
tr
Switching Time (ns)
Switching Time (ns)
50
td(off)
10
0
40
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
td(on)
1
30
1000
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 4.7 W
TJ = 25°C
TJ = 175°C
100
20
Rg, Gate Resistance (W)
Figure 9. Turn−On Characteristics vs. Gate
Resistance
1000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 75 A
TJ = 25°C
TJ = 175°C
tf
150
10
200
tf
100
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 4.7 W
TJ = 25°C
TJ = 175°C
0
50
100
150
200
IC, Collector Current (A)
IC, Collector Current (A)
Figure 12. Turn−Off Characteristics vs. Collector
Current
Figure 11. Turn−On Characteristics vs. Collector
Current
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FGHL75T65LQDT
TYPICAL CHARACTERISTICS (continued)
10
0
Switching Loss (mJ)
Switching Loss (mJ)
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 75 A
TJ = 25°C
TJ = 175°C
Eon
1
10
Eoff
10
20
30
40
1
Eon
0,1
50
Eoff
0
30
60
Rg, Gate Resistance (W)
Irr, Reverse Recovery Current (A)
IF, Forward Current (A)
150
100
50
0
1
2
3
4
45
40
35
30
25
20
15
5
0
400
5
Qrr, Reverse Recovery Charge (nC)
trr, Reverse Recovery Time (ns)
VR = 400 V
IF = 75 A
TJ = 25°C
TJ = 175°C
150
100
50
800
1000
1200
800
1000
1200
1400
1600
Figure 16. Reverse Recovery Current
250
600
600
diF/dt, Diode Current Slop (A/ms)
Figure 15. Forward Characteristics
200
VR = 400 V
IF = 75 A
TJ = 25°C
TJ = 175°C
10
VF, Forward Voltage (V)
0
400
150
50
200
0
120
Figure 14. Switching Loss vs. Collector Current
Common Emitter
TJ = 25°C
TJ = 175°C
250
90
IC, Collector Current (A)
Figure 13. Switching Loss vs. Gate Resistance
300
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 4.7 W
TJ = 25°C
TJ = 175°C
1400
1600
3500
3000
2500
2000
1500
VR = 400 V
IF = 75 A
TJ = 25°C
TJ = 175°C
1000
500
0
400
diF/dt, Diode Current Slop (A/ms)
600
800
1000
1200
1400
diF/dt, Diode Current Slop (A/ms)
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
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6
1600
FGHL75T65LQDT
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Zqjc, Thermal Response (K/W)
1
0.5
0.1
0.2
0.01
0.1
0.05
0.02
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zqjc + Tc
R1
R2
0.01
0.001
C1 = t1 / R1 C2 = t2 / R2
Single Pulse
0.0001
10−6
10−5
i:
ri[K/W]:
t[s]:
10−4
1
0.0050
5.432E−6
10−3
2
3
4
0.0742
0.1171
0.0753
1.093E−4 1.815E−3 1.054E−2
10−2
10−1
100
101
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
Zqjc, Thermal Response (K/W)
0.5
0.1
0.2
0.1
0.05
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zqjc + Tc
R1
R2
0.02
0.01
0.01
0.001
C1 = t1 / R1 C2 = t2 / R2
Single Pulse
0.0001
10−6
10−5
i:
ri[K/W]:
t[s]:
10−4
1
0.0103
1.223E−5
10−3
2
3
4
0.0950
0.1905
0.1280
1.891E−4 3.570E−3 3.842E−2
10−2
10−1
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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100
101
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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