FGHL75T65LQDTL4

IGBT - Field Stop, Trench 650 V, 75 A FGHL75T65LQDTL4 Description Field stop 4th generation Low VCE(sat) IGBT technology and Full current rated copack Diode technology. Features • • • • • • • • • Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 75 A 100% of the Part are Tested for ILM (Note 2) Smooth & Optimized Switching Tight Parameter Distribution Co−Packed with Soft and Fast Recovery Diode RoHS Compliant www.onsemi.com VCES IC VCE(Sat) 650 V 75 A 1.15 V C E1: Kelvin Emitter E2: Power Emitter G E1 E2 Typical Applications • Solar Inverter • UPS, ESS • PFC, Converters MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 ±30 V IC 80 A Pulsed Collector Current (Note 2) ILM 300 A Pulsed Collector Current (Note 3) ICM 300 A IF 80 A Pulsed Diode Maximum Forward Current IFM 300 A Maximum Power Dissipation @ TC = 25°C PD 469 W Collector Current @ TC = 25°C (Note 1) Collector Current @ TC = 100°C Diode Forward Current @ TC = 25°C (Note 1) 234 TJ, TSTG −55 to +175 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire. 2. VCC = 400 V, VGE = 15 V, IC = 300 A, Inductive Load, 100% Tested. 3. Repetitive rating: Pulse width limited by max. Junction temperature. © Semiconductor Components Industries, LLC, 2021 July, 2021 − Rev. 0 $Y&Z&3&K FGHL75T65 LQDTL4 75 Maximum Power Dissipation @ TC = 100°C Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) MARKING DIAGRAM 75 Diode Forward Current @ TC = 100°C Operating Junction and Storage Temperature Range TO−247−4LD CASE 340CJ 1 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Data Code &K = 2−Digit Lot Traceability Code FGHL75T65LQDTL4 = Specific Device Code ORDERING INFORMATION Device Package Shipping FGHL75T65LQDTL4 TO−247−4LD 30 Units / Rail Publication Order Number: FGHL75T65LQDTL4/D FGHL75T65LQDTL4 THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance Junction−to−Case, for IGBT Rating RqJC 0.32 _C/W Thermal Resistance Junction−to−Case, for Diode RqJC 0.48 _C/W Thermal Resistance Junction−to−Ambient RqJA 40 _C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA DBVCES / DTJ − 0.6 − V/_C Collector to Emitter Cut−off Current VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate Leakage Current VGE = 20 V, VCE = 0 V IGES − − ±400 nA Gate to Emitter Threshold Voltage VGE = VCE, IC = 75 mA VGE(th) 3.0 4.5 6.0 V Collector to Emitter Saturation Voltage VGE = 15 V, IC = 75 A, TJ = 25_C VGE = 15 V, IC = 75 A, TJ = 175_C VCE(sat) − − 1.15 1.22 1.35 − V pF ON CHARACTERISTICS DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 15030 − Output Capacitance Coes − 181 − Reverse Transfer Capacitance Cres − 68 − Qg − 779 − Gate to Emitter Charge Qge − 69 − Gate to Collector Charge Qgc − 251 − td(on) − 40 − tr − 12 − td(off) − 560 − tf − 144 − Turn−on Switching Loss Eon − 0.51 − Turn−off Switching Loss Eoff − 1.39 − Input Capacitance Gate Charge Total VCC = 400 V, IC = 75 V, VGE = 15 V nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 25_C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V Fall Time Total Switching Loss Ets − 1.9 − td(on) − 40 − tr − 20 − td(off) − 548 − tf − 112 − Turn−on Switching Loss Eon − 1.01 − Turn−off Switching Loss Eoff − 2.53 − Total Switching Loss Ets − 3.54 − Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 25_C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V Fall Time www.onsemi.com 2 ns mJ ns mJ FGHL75T65LQDTL4 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 32 − ns tr − 16 − td(off) − 640 − tf − 212 − Turn−on Switching Loss Eon − 1.45 − Turn−off Switching Loss Eoff − 2 − Total Switching Loss Ets − 3.45 − td(on) − 36 − tr − 28 − td(off) − 616 − tf − 168 − Turn−on Switching Loss Eon − 2.4 − Turn−off Switching Loss Eoff − 3.64 − Total Switching Loss Ets − 6.04 − VF − − 1.65 1.55 2.1 − V EREC − 105 − mJ SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 175_C, VCC = 400 V, IC = 37.5 A, RG = 4.7 W, VGE = 15 V Fall Time Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 175_C, VCC = 400 V, IC = 75 A, RG = 4.7 W, VGE = 15 V Fall Time mJ ns mJ DIODE CHARACTERISTICS Diode Forward Voltage IF = 75 A, TJ = 25_C IF = 75 A, TJ = 175_C Reverse Recovery Energy TJ = 25_C, VR = 400 V, IF = 37.5 A, diF/dt = 1000 A/ms Reverse Recovery Time Trr − 59 − ns Reverse Recovery Charge Qrr − 574 − nC Reverse Recovery Current Irr − 20 − A EREC − 152 − mJ Trr − 87 − ns Reverse Recovery Charge Qrr − 794 − nC Reverse Recovery Current Irr − 18 − A EREC − 550 − mJ Trr − 119 − ns Reverse Recovery Charge Qrr − 2154 − nC Reverse Recovery Current Irr − 36 − A EREC − 764 − mJ Trr − 145 − ns Reverse Recovery Charge Qrr − 2947 − nC Reverse Recovery Current Irr − 40 − A Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Energy Reverse Recovery Time TJ = 25_C, VR = 400 V, IF = 75 A, diF/dt = 1000 A/ms TJ = 175_C, VR = 400 V, IF = 37.5 A, diF/dt = 1000 A/ms TJ = 175_C, VR = 400 V, IF = 75 A, diF/dt = 1000 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGHL75T65LQDTL4 TYPICAL CHARACTERISTICS 300 20 V 15 V 12 V 10 V 250 200 150 IC, Collector Current (A) IC, Collector Current (A) 300 VGE = 8 V 100 50 250 200 150 0.5 1 1.5 VGE = 8 V 100 50 0 0 20 V 15 V 12 V 10 V 0 2 0 VCE, Collector−Emitter Voltage (V) 150 IC, Collector Current (A) IC, Collector Current (A) 200 150 100 50 0 0 0.5 1 1.5 2 2.5 100 25 0 0 6 8 10000 C, Capacitance (pF) VCE(Sat), Collector−Emitter Saturation (V) 4 1.0 IC = 37.5 A Cies 1000 100 150 Coes 100 1 200 Cres Common Emitter VGE = 0 V, f = 1 MHz 10 50 10 Figure 4. Typical Transfer Characteristics 150 A 0 2 VGE, Gate−Emitter Voltage (V) Common Emitter VGE = 15 V −50 3 50 3 75 A 0.5 −100 2.5 75 Figure 3. Typical Saturation Voltage Characteristics 1.5 2 Common Emitter VCE = 20 V TJ = 25°C TJ = 175°C 125 VCE, Collector−Emitter Voltage (V) 2.0 1.5 Figure 2. Typical Output Characteristics (TJ = 1755C) Common Emitter VGE = 15 V TJ = 25°C TJ = 175°C 250 1 VCE, Collector−Emitter Voltage (V) Figure 1. Typical Output Characteristics (TJ = 255C) 300 0.5 10 VCE, Collector−Emitter Voltage (V) TJ, Junction Temperature (°C) Figure 5. Saturation Voltage vs. Junction Temperature www.onsemi.com 4 Figure 6. Capacitance Characteristics 30 FGHL75T65LQDTL4 TYPICAL CHARACTERISTICS (continued) 1000 Common Emitter IC = 75 A 12 300 V VCC = 200 V 9 IC, Collector Current (A) VGE, Gate−Emitter Voltage (V) 15 400 V 6 3 0 0 200 400 600 DC 100 ms 10 1 ms 10 ms *Notes: 1. TJ = 25°C 2. TJ = 175°C 3. Single Pulse 1 0.1 800 10 ms 100 1 10 100 1000 Qg, Gate Charge (nC) VCE, Collector−Emitter Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. SOA Characteristics td(off) td(on) Switching Time (ns) Switching Time (ns) 10000 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TJ = 25°C TJ = 175°C tr 10 0 10 20 30 40 1000 100 10 0 50 10 Rg, Gate Resistance (W) 30 40 50 Figure 10. Turn−Off Characteristics vs. Gate Resistance 1000 1000 td(off) tr 100 Switching Time (ns) Switching Time (ns) 20 Rg, Gate Resistance (W) Figure 9. Turn−On Characteristics vs. Gate Resistance td(on) Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TJ = 25°C TJ = 175°C 10 1 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TJ = 25°C TJ = 175°C tf 0 50 100 150 100 10 200 tf Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TJ = 25°C TJ = 175°C 0 50 100 150 200 IC, Collector Current (A) IC, Collector Current (A) Figure 12. Turn−Off Characteristics vs. Collector Current Figure 11. Turn−On Characteristics vs. Collector Current www.onsemi.com 5 FGHL75T65LQDTL4 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A TJ = 25°C TJ = 175°C Switching Loss (mJ) Switching Loss (mJ) TYPICAL CHARACTERISTICS (continued) Eoff Eoff 10 Eon 1 Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TJ = 25°C TJ = 175°C Eon 0.1 1 0 10 20 30 40 50 0 50 Rg, Gate Resistance (W) 50 Common Emitter TJ = 25°C TJ = 175°C 200 150 100 50 0 0 1 2 3 4 45 40 35 30 25 20 15 5 0 400 5 VR = 400 V IF = 75 A TJ = 25°C TJ = 175°C 10 600 Qrr, Reverse Recovery Charge (nC) trr, Reverse Recovery Time (ns) VR = 400 V IF = 75 A TJ = 25°C TJ = 175°C 200 150 100 50 600 800 1000 1200 1000 1200 1400 1600 Figure 16. Reverse Recovery Current Figure 15. Forward Characteristics 250 800 diF/dt, Diode Current Slop (A/ms) VF, Forward Voltage (V) 0 400 200 Figure 14. Switching Loss vs. Collector Current Irr, Reverse Recovery Current (A) IF, Forward Current (A) 250 150 IC, Collector Current (A) Figure 13. Switching Loss vs. Gate Resistance 300 100 1400 1600 3500 3000 2500 VR = 400 V IF = 75 A TJ = 25°C TJ = 175°C 2000 1500 1000 500 0 400 diF/dt, Diode Current Slop (A/ms) 600 800 1000 1200 1400 diF/dt, Diode Current Slop (A/ms) Figure 17. Reverse Recovery Time Figure 18. Stored Charge www.onsemi.com 6 1600 FGHL75T65LQDTL4 TYPICAL CHARACTERISTICS (continued) Zqjc, Thermal Response (K/W) 1 0.1 PDM 0.5 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zqjc + Tc R1 R2 0.2 0.1 0.05 0.01 0.02 0.01 Single Pulse i: ri[K/W]: t[s]: 0.001 10−5 10−6 1 0.0072 4.325E−6 10−4 C1 = t1 / R1 C2 = t2 / R2 2 3 4 5 6 0.0163 0.0325 0.0503 0.0821 0.0195 3.409E−5 1.991E−4 1.529E−3 7.490E−3 2.690E−2 10−3 10−2 10−1 100 101 Rectangular Pulse Duration (s) Figure 19. Transient Thermal Impedance of IGBT Zqjc, Thermal Response (K/W) 1 PDM 0.5 0.1 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zqjc + Tc R1 R2 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 10−6 i: ri[K/W]: t[s]: 1 0.0153 2.487E−6 10−5 10−4 C1 = t1 / R1 C2 = t2 / R2 2 3 4 5 6 0.0393 0.0683 0.0787 0.1382 0.0363 2.417E−5 3.457E−4 1.655E−3 1.554E−2 4.687E−2 10−3 10−2 10−1 Rectangular Pulse Duration (s) Figure 20. Transient Thermal Impedance of Diode www.onsemi.com 7 100 101 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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