FGI3236-F085

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGB3236_F085 / FGI3236_F085 EcoSPARKŠ 320mJ, 360V, N-Channel Ignition IGBT Features Applications „ Industry Standard D2-Pak package „ Automotive lgnition Coil Driver Circuits o „ SCIS Energy = 320mJ at TJ = 25 C „ Coil On Plug Applications „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Package E GATE G EMITTER COLLECTOR JEDEC TO-263AB D2-Pak @2008 Fairchild Semiconductor Corporation FGB3236_F085 / FGI3236_F085 Rev. A1 COLLECTOR (FLANGE) TO262AB FDI SERIES 1 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT October 2013 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 360 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 24 V ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C) 320 mJ 160 mJ ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 44 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 27 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 187 W 1.25 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV Package Marking and Ordering Information Device Marking FGB3236 Device FGB3236_F085 Package TO263 Reel Size 330mm Tape Width 24mm Quantity 800 units FGI3236 FGI3236_F085 TO262 Tube NA 50 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 15 TJ = -40 to 150oC 330 363 390 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 350 378 410 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCES = 250V, See Fig. 11 TC = 25oC - - 25 µA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, See Fig. 11 TC = 25oC - - 1 - - 40 R1 Series Gate Resistance R2 Gate to Emitter Resistance ICES TC = 150oC TC = 150oC mA - 100 - Ω 10K - 30K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TC = 25oC, See Fig. 3 - 1.14 1.4 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TC = 150oC, See Fig. 4 - 1.32 1.7 V - 1.61 2.05 V 50 - - A VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, ICE(ON) Collector to Emitter On State Current FGB3236_F085 / FGI3236_F085 Rev. A1 VGE = 5V, VCE = 5V 2 o TC = 150 C www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ - 20 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V, See Fig.14 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 10A TC = 25oC TC = 150oC - nC 1.3 1.6 2.2 0.75 1.1 1.8 - 2.6 - V - 0.65 4 µs - 1.7 7 µs - 5.4 15 µs - 1.64 15 µs - - 320 mJ - 0.8 oC/W V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, See Fig.12 Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive TJ = 25oC, See Fig.12 Self Clamped inductive Switching 25oC, TJ = L = 3.0mHy, ICE = 14.7A, RG = 1KΩ, VGE = 5V, See Fig.1&2 Thermal Characteristics RθJC Thermal Resistance Junction to Case FGB3236_F085 / FGI3236_F085 Rev. A1 All Packages 3 - www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 35 RG = 1KΩ, VGE = 5V 30 25 20 o TJ = 25 C 15 o TJ = 150 C 10 5 0 SCIS Curves valid for Vclamp Voltages of