FGI40N60SFTU

FGI40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =2.3V @ IC = 40A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC I2-PAK G D S Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC TL V 80 A A @ TC = 25 C @ TC = 25oC 290 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds  20 A o Storage Temperature Range V 40 Maximum Power Dissipation Tstg Units 600 120 o Pulsed Collector Current @ TC = 100 C 116 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 o C/W RJA Thermal Resistance, Junction to Ambient - 62.5 o C/W ©2009 Fairchild Semiconductor Corporation FGI40N60SF Rev.A1 1 www.fairchildsemi.com FGI40N60SF 600V, 40A Field Stop IGBT July 2009 Device Marking Device Package Packaging Type FGI40N60SF FGI40N60SFTU TO262 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250A, VCE = VGE 4.0 5.0 6.5 V IC = 40A, VGE = 15V - 2.3 2.9 V IC = 40A, VGE = 15V, TC = 125oC - 2.5 - V - 2110 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 200 - pF - 60 - pF Switching Characteristics td(on) Turn-On Delay Time - 25 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC - 115 - ns - 27 54 ns - 1.13 - mJ - 0.31 - mJ Ets Total Switching Loss - 1.44 - mJ td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 43 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.48 - mJ Ets Total Switching Loss - 1.62 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGI40N60SF Rev. A1 VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 40A, VGE = 15V 2 - 30 - ns - 1.14 - mJ - 120 - nC - 14 - nC - 58 - nC www.fairchildsemi.com FGI40N60SF 600V, 40A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o o TC = 25 C 15V 80 20V 15V 100 Collector Current, IC [A] 100 Collector Current, IC [A] TC = 125 C 20V 12V 60 40 10V 80 60 10V 40 20 20 VGE = 8V VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 6.0 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] o Collector Current, IC [A] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 80 TC = 25 C 60 o TC = 125 C 40 20 TC = 25 C o TC = 125 C 80 40 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 6 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.5 80A 3.0 2.5 40A 2.0 IC = 20A 1.5 1.0 25 13 3 Common Emitter o TC = -40 C 16 12 8 40A 4 80A IC = 20A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGI40N60SF Rev. A1 8 10 12 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 12V 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGI40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 80A 4 IC = 20A 0 TC = 125 C 16 12 8 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 20 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ciss o Gate-Emitter Voltage, VGE [V] 4000 Capacitance [pF] 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 5000 o TC = 25 C 3000 Coss 2000 1000 Crss 0 0.1 TC = 25 C 12 Vcc = 100V 200V 300V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 Gate Charge, Qg [nC] 150 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100 10s 100 Switching Time [ns] Collector Current, Ic [A] 80A 4 100s 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C 0.01 10 1 FGI40N60SF Rev. A1 10 100 Collector-Emitter Voltage, VCE [V] 1000 0 4 10 20 30 40 Gate Resistance, RG [] 50 www.fairchildsemi.com FGI40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 500 5500 Common Emitter VGE = 15V, RG = 10 o TC = 25 C o 1000 o TC = 25 C Switching Time [ns] Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 125 C td(off) 100 tf TC = 125 C td(on) 10 20 10 0 10 20 30 40 50 40 Gate Resistance, RG [] 80 Figure 16. Switching Loss vs. Gate Resistance 10 500 Common Emitter VGE = 15V, RG = 10 Common Emitter VCC = 400V, VGE = 15V o IC = 40A TC = 25 C o o TC = 125 C TC = 25 C Switching Loss [mJ] Switching Time [ns] 60 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current td(off) 100 tf o TC = 125 C 1 Eoff 40 60 0 80 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [] 50 Figure 18. Turn off Switching SOA Characteristics 30 200 Common Emitter VGE = 15V, RG = 10 100 o TC = 25 C Eon o TC = 125 C Collector Current, IC [A] 10 Eon 0.2 0.3 10 20 Switching Loss [mJ] tr 100 Eoff 1 10 Safe Operating Area 0.1 o VGE = 15V, TC = 125 C 1 20 30 40 50 60 70 1 80 FGI40N60SF Rev. A1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 5 www.fairchildsemi.com FGI40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics FGI40N60SF 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGI40N60SF Rev. A1 6 www.fairchildsemi.com I2-PAK 4.50 0.20 (0.40) 9.90 0.20 +0.10 MAX13.40 9.20 0.20 (1.46) 1.20 0.20 1.30 –0.05 0.80 0.10 2.54 TYP 10.08 0.20 1.47 0.10 MAX 3.00 (0.94) 13.08 0.20 ) 5 (4 1.27 0.10 +0.10 0.50 –0.05 2.54 TYP 2.40 0.20 10.00 0.20 Dimensions in Millimeters FGI40N60SF Rev. A1 7 www.fairchildsemi.com FGI40N60SF 600V, 40A Field Stop IGBT Mechanical Dimensions TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com