Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FGPF15N60UNDF
600 V, 15 A
Short Circuit Rated IGBT
Features
General Description
• Short Circuit Rated 10us
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,
motor control and home appliances.
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
C
G
G C E
TO-220F
E
(Retractable)
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
PD
Tstg
Unit
600
V
± 20
V
Collector Current
@ TC = 25oC
30
A
Collector Current
@ TC = 100oC
15
A
A
A
o
Pulsed Collector Current
@ TC = 25 C
45
Diode Forward Current
@ TC = 25oC
15
Diode Forward Current
o
@ TC = 100 C
7.5
A
Maximum Power Dissipation
@ TC = 25oC
42
W
Maximum Power Dissipation
@ TC = 100oC
17
Operating Junction Temperature
TJ
Ratings
Storage Temperature Range
W
-55 to +150
o
C
-55 to +150
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
3.0
oC/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
4.9
oC/W
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
-
62.5
o
C/W
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
1
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
September 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGPF15N60UNDF
FGPF15N60UNDF
TO-220F
-
-
50ea
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±10
μA
IC = 15 mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
5.5
6.8
8.5
V
IC = 15 A, VGE = 15 V
-
2.2
2.7
V
IC = 15 A, VGE = 15 V,
TC = 125oC
-
2.7
-
V
-
619
-
pF
VCE = 30 V, VGE = 0 V,
f = 1MHz
-
80
-
pF
-
24
-
pF
9.3
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
-
tr
Rise Time
-
9.8
-
ns
td(off)
Turn-Off Delay Time
-
54.8
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Ets
VCC = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
-
9.9
12.8
ns
-
0.37
-
mJ
Turn-Off Switching Loss
-
0.067
-
mJ
Total Switching Loss
-
0.44
-
mJ
td(on)
Turn-On Delay Time
-
8.9
-
ns
tr
Rise Time
-
9.9
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
Tsc
Short Circuit Withstand Time
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
VCC = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
VCC = 350 V,
RG = 100 Ω, VGE = 15 V,
TC = 150oC
2
-
56.6
-
ns
-
13.2
-
ns
-
0.54
-
mJ
-
0.11
-
mJ
-
0.65
-
mJ
10
-
-
μs
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Package Marking and Ordering Information
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400 V, IC = 15 A,
VGE = 15 V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 15 A
Diode Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
43
-
nC
6
-
nC
-
26
-
nC
TC = 25°C unless otherwise noted
IF =15 A, dIF/dt = 200 A/μs
Qrr
-
Min.
Typ.
Max
TC = 25oC
-
1.6
2.2
TC= 125oC
-
1.5
-
TC = 25oC
-
82.4
-
142
-
-
213
-
-
541
-
TC=
125oC
TC = 25oC
o
TC= 125 C
3
Unit
V
ns
nC
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
80
80
o
TC = 25 C
o
TC = 125 C
17V
20V
70
15V
60
50
20V
17V
70
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
VGE = 12V
40
30
20
10
15V
60
50
VGE = 12V
40
30
20
10
0
0.0
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, VCE [V]
0
0.0
9.0
Figure 3. Typical Saturation Voltage
Characteristics
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, VCE [V]
9.0
Figure 4. Transfer Characteristics
80
80
Common Emitter
VGE = 15V
60
TC = 25 C
70 VCE = 20V
o
o
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
70
o
TC = 125 C
50
40
30
20
o
TC = 125 C
50
40
30
20
10
10
0
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
0
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
4.0
30A
3.5
3.0
15A
2.5
2.0
IC = 7.5A
1.5
1.0
25
50
75
100
o
Case Temperature, TC [ C]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
3
6
9
12
Gate-Emitter Voltage,VGE [V]
15
Figure 6. Saturation Voltage vs. VGE
4.5
Collector-Emitter Voltage, VCE [V]
TC = 25 C
60
o
TC = 25 C
16
12
8
4
15A
30A
4
IC = 7.5A
0
125
Common Emitter
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
3000
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
o
TC = 25 C
Cies
1000
Coes
Capacitance [pF]
16
12
8
Cres
100
15A
Common Emitter
VGE = 0V, f = 1MHz
30A
4
IC = 7.5A
0
o
TC = 25 C
10
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
100
15
12
10μs
400V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
200V
VCC = 100V
9
6
3
10
100μs
1ms
1
10 ms
Common Emitter
o
TC = 25 C
0.01
0
0
5
10
15 20 25 30 35
Gate Charge, Qg [nC]
40
45
1
50
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
50
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
40
30
o
Switching Time [ns]
Switching Time [ns]
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
20
tr
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
TC = 25 C
td(off)
o
TC = 125 C
100
tf
o
TC = 25 C
10
o
TC = 125 C
5
0
10
20
30
40
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
50
0
60
10
20
30
40
50
60
Gate Resistance, RG [Ω]
5
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
50
300
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
10
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
tr
o
TC = 125 C
Switching Time [ns]
Switching Time [ns]
100
o
td(off)
tf
TC = 25 C
10
o
TC = 125 C
5
1
0
5
10
15
20
25
30
35
0
5
Collector Current, IC [A]
10
15
20
25
30
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
Collector Current
3000
1000
Eon
Eon
Switching Loss [uJ]
Switching Loss [μJ]
1000
Eoff
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 15A
Eoff
100
Common Emitter
VGE = 15V, RG = 10Ω
o
o
TC = 25 C
TC = 25 C
o
o
TC = 125 C
10
0
10
20
30
40
Gate Resistance, RG [Ω]
TC = 125 C
10
50
0
60
5
10
15
20
25
30
35
Collector Current, IC [A]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
100
30
Forward Current, IF [A]
Collector Current, IC [A]
35
Collector Current, IC [A]
10
10
o
o
TJ = 125 C
TJ = 75 C
o
TJ = 25 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1
1000
0
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
6
1
2
Forward Voltage, VF [V]
3
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 20. Stored Charge
100
0.7
o
TC = 25 C
o
Stored Recovery charge, Qrr [nC]
TJ = 125 C
Reverse Current , IR [μA]
10
1
o
TJ = 75 C
0.1
o
0.01
TJ = 25 C
1E-3
50
0.6 TC = 125oC
200A/μs
0.5
0.4
0.3
diF/dt = 100A/μs
200A/μs
0.2
0.1
diF/dt = 100A/μs
0.0
200
400
Reverse Voltage, VR [V]
600
0
2
4
6
8
10
12
14
16
18
20
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
200
o
Reverse Recovery Time, trr [ns]
TC = 25 C
diF/dt = 100A/μs
o
TC = 125 C
150
200A/μs
diF/dt = 100A/μs
100
200A/μs
50
0
0
2
4
6
8
10
12
14
16
18
20
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
5 0.5
Thermal Response [Zthjc]
Thermal Response [Zthjc]
1
0.5
0.2
1 0.2
0.1 0.1
0.1
0.05
0.05
0.02
PDM
t1
0.1 0.01
0.02
t2
Duty
PDM Factor, D = t1/t2
Peak Tj =tPdm x Zthjc + TC
single
0.01 pulse
0.01
0.01 single pulse
1E-5
1E-4
1
t2
1E-3
0.01
0.1 Duty Factor,1D = t1/t2
10
Peak Tj = Pdm x Zthjc + TC
0.005
-5
10
Rectangular Pulse Duration [sec]
-4
10
-3
-2
10
10
-1
10
0
10
1
10
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
7
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Typical Performance Characteristics
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
Mechanical Dimensions
Figure 23. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
9
www.fairchildsemi.com
FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
Global Power ResourceSM
PowerTrench
BitSiC™
Build it Now™
GreenBridge™
PowerXS™
TinyBoost®
CorePLUS™
Programmable Active Droop™
Green FPS™
TinyBuck®
®
CorePOWER™
QFET
Green FPS™ e-Series™
TinyCalc™
CROSSVOLT™
QS™
Gmax™
TinyLogic®
Quiet Series™
CTL™
GTO™
TINYOPTO™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
SmartMax™
MICROCOUPLER™
ESBC™
TRUECURRENT®*
SMART
START™
MicroFET™
®
μSerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
®
STEALTH™
MillerDrive™
Fairchild Semiconductor
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
SuperSOT™-3
mWSaver
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
®
VCX™
OPTOLOGIC
SuperSOT™-8
FastvCore™
®
®
VisualMax™
OPTOPLANAR
SupreMOS
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com