FGPF30N30TDTU

FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.4V @ IC = 20A • High input impedance • Fast switching • RoHS complaint Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 300 V VGES Gate to Emitter Voltage ± 30 V IC pulse (1) Pulsed Collector Current @ TC = 25oC 80 A IF Diode Continuous Forward Current @ TC = 100°C 10 A IFM Diode Maximum Forward Current 40 A Maximum Power Dissipation @ TC = 25oC 44.6 W Maximum Power Dissipation @ TC = 100oC PD TJ 17.8 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C oC 300 Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 2.8 oC/W RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode -- 3.0 oC/W RθJA Thermal Resistance, Junction to Ambient - 62.5 o C/W Notes : (1) Repetitive tese, Pulse width = 100usec, Duty = 0.1 * Ic_pluse limited by max Tj ©2007 Fairchild Semiconductor Corporation FGPF30N30TD Rev. A 1 www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT September 2007 Device Marking Device Package Packaging Type FGPF30N30TD FGPF30N30TDTU TO-220F Rail / Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 300 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.26 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 3.0 4.5 5.5 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V - 1.2 1.5 V IC = 20A, VGE = 15V - 1.4 - V IC = 30A, VGE = 15V, TC = 25oC - 1.7 - V IC = 30A, VGE = 15V, TC = 125oC - 1.6 - V - 1540 -- pF VCE = 30V, VGE = 0V, f = 1MHz - 65 -- pF - 55 -- pF - 22 -- ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf td(on) VCC = 200V, IC = 20A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25oC - 33 -- ns - 130 -- ns Fall Time - 180 300 ns Turn-On Delay Time - 21 -- ns tr Rise Time td(off) Turn-Off Delay Time tf Qg Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 200V, IC = 20A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125oC - 34 -- ns - 140 -- ns Fall Time - 260 -- ns Total Gate Charge - 65 -- nC - 10 -- nC - 26 -- nC VCE = 200V, IC = 20A, VGE = 15V 2 FGPF30N30TD Rev. A www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Package Marking and Ordering Information Symbol Parameter Min. Typ. Max. TC = 25°C -- 1.1 1.4 TC = 125°C -- 0.9 -- TC = 25°C -- 22 -- TC = 125°C IF = 10A Diode Peak Reverse Recovery Cur- dI/dt = 200A/µs TC = 25°C rent Diode Forward Voltage TC = 125°C -- 35 -- -- 2.7 -- -- 5.6 -- TC = 25°C -- 29.7 -- TC = 125°C -- 98 -- VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Qrr Test Conditions IF = 10A Diode Reverse Recovery Charge 3 FGPF30N30TD Rev. A Units V ns A nC www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Figure 1. Typical Output Characteristics 80 80 o 20V 60 40 VGE = 8V 20 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 40 VGE = 8V 20 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 80 80 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 60 Collector Current, IC [A] Collector Current, IC [A] 10V 60 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteritics o TC = 125 C 40 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Collector-Emitter Voltage, VCE [V] 30A 1.6 20A 1.2 IC = 10A 1.0 12 4 Common Emitter o TC = 25 C 16 12 8 30A 20A 4 IC = 10A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF30N30TD Rev. A 20 Figure 6. Saturation Voltage vs. Vge 1.8 0.8 25 40 0 Common Emitter VGE = 15V 1.4 TC = 25 C 60 T = 125oC C 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Collector-Emitter Voltage, VCE [V] 15V 20V 12V 10V 0 0.0 o TC = 125 C 15V 12V Collector Current, IC [A] TC = 25 C Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics 3 6 9 12 Gate-Emitter Voltage, VGE [V] 15 www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics 20 2500 Common Emitter Common Emitter VGE = 0V, f = 1MHz 16 12 8 30A 4 1000 Coes 500 20A IC = 10A 3 o TC = 25 C 1500 Cres 0 6 9 12 Gate-Emitter Voltage, VGE [V] 0 15 1 Figure 9. Gate Charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 15 300 Common Emitter 100 o TC = 25 C 12 VCC = 100V 9 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] Cies 2000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 200V 6 3 20 40 60 Gate Charge, Qg [nC] 80 Figure 11. Turn-On Characteristics vs. Gate Resistance 50µs 100µs 10 IC MAX (Continuous) 1ms 1 10 ms Single Nonrepetitive DC o Pulse TC = 25 C 0.1 0.01 0.1 0 0 IC MAX (Pulse) Curves must be derated linearly with increase in temperature 1 10 100 Collector-Emitter Voltage, VCE [V] 600 Figure 12. Turn-Off Characteristics vs. Gate Resistance 100 1000 Switching Time [ns] Switching Time [ns] tf tr Common Emitter VCC = 200V, VGE = 15V IC = 20A td(on) 10 100 td(off) Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 25 C 10 o TC = 125 C 5 0 10 20 30 o TC = 125 C 40 5 50 Gate Resistance, RG [Ω] 10 20 30 40 50 Gate Resistance, RG [Ω] 5 FGPF30N30TD Rev. A 0 www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-On Characteristics vs. Collector Current 200 Figure 14. Turn-Off Characteristics vs. Collector Current 800 Common Emitter VGE = 15V, RG = 20Ω Common Emitter VGE = 15V, RG = 20Ω o 100 o TC = 25 C TC = 25 C tr o o Switching Time [ns] Switching Time [ns] TC = 125 C td(on) TC = 125 C tf td(off) 100 10 5 50 5 10 15 20 25 30 5 10 15 Collector Current, IC [A] 25 30 Figure 16. Switching Loss vs Collector Current Figure 15. Switching Loss vs Gate Resistance 1800 500 Common Emitter VCC = 200V, VGE = 15V 1000 20 Collector Current, IC [A] IC = 20A Eoff Switching Loss [mJ] Switching Loss [mJ] o TC = 25 C 100 o TC = 125 C Eoff 100 Eon Eon Common Emitter VGE = 15V, RG = 20Ω o TC = 25 C 10 o TC = 125 C 20 0 10 20 30 40 5 50 5 10 Gate Resistance, RG [Ω] 15 20 25 30 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 0.5 1 0.1 0.2 0.1 0.05 0.02 PDM 0.01 0.01 1E-3 1E-5 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] 6 FGPF30N30TD Rev. A 10 100 www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 18. Forward Characteristics Figure 19. Typical Reverse Recovery Time 36 100 IF = 10A o 10 Reverse Recovery Time , trr [ns] Forward Current , IF [A] T J = 125 C o T J = 25 C 1 o T C = 25 C o T C = 125 C 0.1 0.0 0.5 1.0 1.5 2.0 32 28 24 100 2.5 Forw ard Voltage , V F [V] 200 300 400 500 di/dt [A/µ s] 7 FGPF30N30TD Rev. A o Tc = 25 C www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT Typical Performance Characteristics (Continued) FGPF30N30TD 300V, 30A PDP Trench IGBT Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters 8 FGPF30N30TD Rev. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I29 9 FGPF30N30TD Rev. A www.fairchildsemi.com FGPF30N30TD 300V, 30A PDP Trench IGBT tm