FGPF30N45TTU

FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.55V @ IC = 30A • High input impedance • Fast switching Applications • PDP System C G TO-220F 1 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 450 V VGES Gate to Emitter Voltage ±30 V 120 A ICM (1) PD @ TC = 25oC Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC Pulsed Collector Current 50.4 W 20.1 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds o 300 C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 2.48 o RθJA Thermal Resistance, Junction to Ambient - 62.5 oC/W ©2009 Fairchild Semiconductor Corporation FGPF30N45T Rev. A 1 C/W www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT April 2009 Device Marking Device Package FGPF30N45T FGPF30N45TTU TO-220F Eco Status RoHS Packaging Type Qty per Tube Rail / Tube 50ea For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 450 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.5 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 2.5 4.0 5.0 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V - 1.35 1.6 IC = 30A, VGE = 15V - 1.55 - V IC = 30A, VGE = 15V, TC = 125oC - 1.53 - V - 1610 - pF VCE = 30V, VGE = 0V, f = 1MHz - 88 - pF - 68 - pF - 19 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGPF30N45T Rev. A VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 30A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 30A, VGE = 15V 2 - 57 - ns - 119 - ns - 220 330 ns - 20 - ns - 60 - ns - 122 - ns - 265 - ns - 73 - nC - 11 - nC - 33 - nC www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o TC = 25 C o TC = 125 C 20V 20V 15V 12V 12V Collector Current, IC [A] Collector Current, IC [A] 15V 10V 80 40 VGE = 8V 80 VGE = 8V 40 0 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 Figure 3. Typical Saturation Voltage Characteristics 6 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] o Collector Current, IC [A] 2 4 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 120 TC = 25 C o TC = 125 C 80 40 TC = 25 C o TC = 125 C 80 40 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.6 30A 1.4 20A 1.2 IC = 10A 12 3 Common Emitter o TC = 25 C 16 12 8 4 20A IC = 10A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF30N45T Rev. A 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 1.0 25 2 Figure 6. Saturation Voltage vs. VGE 1.8 Collector-Emitter Voltage, VCE [V] 10V 0 30A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 10000 Common Emitter Cies Coes Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 16 12 8 1000 Cres 100 20A 4 Common Emitter VGE = 0V, f = 1MHz 30A IC = 10A o TC = 25 C 0 10 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 500 Common Emitter IC MAX (Pulse) o TC = 25 C 10µs 100 12 VCC = 100V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 Figure 10. SOA Characteristics 15 200V 9 6 3 0 0 10 Collector-Emitter Voltage, VCE [V] 20 40 60 Gate Charge, Qg [nC] 100µs 10 1ms 10 ms 1 IC MAX (Continuous) Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 DC Operation 0.01 80 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 500 tf Switching Time [ns] Switching Time [ns] 100 tr td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 30A td(off) 100 Common Emitter VCC = 200V, VGE = 15V IC = 30A o TC = 25 C o TC = 25 C o TC = 125 C o 1 0 10 20 30 40 50 0 Gate Resistance, RG [Ω] FGPF30N45T Rev. A TC = 125 C 10 10 20 30 40 50 Gate Resistance, RG [Ω] 4 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 200 Figure 14. Turn-off Characteristics vs. Collector Current 500 Common Emitter VGE = 15V, RG = 15Ω o TC = 25 C 100 tf o Switching Time [ns] Switching Time [ns] TC = 125 C tr 100 td(off) Common Emitter VGE = 15V, RG = 15Ω o TC = 25 C td(on) o TC = 125 C 10 5 10 15 20 25 10 30 5 10 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 25 30 1000 Switching Loss [µJ] Eoff 100 Eon Common Emitter VCC = 200V, VGE = 15V IC = 30A Eoff 100 Eon 10 Common Emitter VGE = 15V, RG = 15Ω o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 10 20 Figure 16. Switching Loss vs.Gate Resistance 1000 Switching Loss [µJ] 15 Collector Current, IC [A] 1 0 10 20 30 40 50 10 5 Gate Resistance, RG [Ω] 20 30 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 0.5 1 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF30N45T Rev. A 5 www.fairchildsemi.com FGPF30N45T 450V, 30A PDP Trench IGBT Typical Performance Characteristics FGPF30N45T 450V, 30A PDP Trench IGBT Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FGPF30N45T Rev. A 6 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com