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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FGPF4565
650 V Field Stop Trench IGBT
Features
General Description
• High Current Capability
Using innovative field stop IGBT technology, Fairchild’s new
series of field stop trench IGBTs offer the optimum performance
for IPL (Intense Pulsed Light).
• Low Saturation Voltage: VCE(sat) =1.5 V(Typ.) @ IC = 30 A
• High Input Impedance
• RoHS Compliant
Applications
• IPL (Intense Pulsed Light)
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
650
V
VGES
Gate to Emitter Voltage
± 25
V
IC pulse (1)*
PD
Pulsed Collector Current
@ TC =
25oC
170
A
Maximum Power Dissipation
@ TC = 25oC
30
W
Maximum Power Dissipation
@ TC = 100oC
12
Operating Junction Temperature
TJ
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +150
o
-55 to +150
oC
o
300
C
C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Typ.
Max.
-
4.1
o
C/W
62.5
o
C/W
-
Unit
Notes:
1. Half sine wave: D< 0.01, pulse width < 1usec,
* Ic pulse limit by max Tj
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
1
www.fairchildsemi.com
FGPF4565 — 650 V Field Stop Trench IGBT
November 2014
Part Number
Top Mark
FGPF4565
FGPF4565
Package Packing Method
TO-220F
Parameter
Tape Width
Quantity
N/A
N/A
50
Tube
Electrical Characteristics of the IGBT
Symbol
Reel Size
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
ΔBVCES/
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
-
0.65
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
3.0
4.0
5.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 μA, VCE = VGE
IC = 20 A, VGE = 15 V
-
1.35
-
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 30 A, VGE = 15 V
-
1.50
1.88
V
IC = 30 A, VGE = 15 V,
TC = 150oC
-
1.75
-
V
-
1650
-
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
34
-
pF
-
17
-
pF
-
11.2
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
VCC = 400 V, IC = 30 A,
RG = 5 Ω, VGE = 15 V,
Resistive Load, TC = 25oC
VCC = 400 V, IC = 30 A,
RG = 5 Ω, VGE = 15 V,
Resistive Load, TC = 150oC
VCE = 400 V, IC = 30 A,
VGE = 15 V
2
-
44.8
-
ns
-
40.8
-
ns
-
153
-
ns
-
12.8
-
ns
-
59.2
-
ns
-
40.8
-
ns
-
202
-
ns
-
40.3
-
nC
-
8.8
-
nC
-
10.4
-
nC
www.fairchildsemi.com
FGPF4565 — 650 V Field Stop Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
180
Figure 2. Typical Output Characteristics
180
o
Collector Current, IC [A]
Collector Current, IC [A]
15V
12V
150
20V
120
15V
90
VGE = 8V
60
10V
120
90
VGE = 8V
60
30
30
0
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
7
0
Figure 3. Typical Saturation Voltage
Characteristics
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
2.5
Collector-Emitter Voltage, VCE [V]
150
120
90
60
Common Emitter
VGE = 15V
o
TC = 25 C
30
o
Common Emitter
VGE = 15V
60A
2
30A
IC = 15A
TC = 150 C
1
-55
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
7
Figure 5. Saturation Voltage vs. VGE
-30
0
30
60
90
120
150
o
Collector-Emitter Case Temperature, TC [ C]
Figure 6. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C
16
12
IC = 15A
30A
8
60A
4
0
7
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
180
Collector-Emitter Voltage, VCE [V]
20V
TC = 150 C
10V
150
Collector Current, IC [A]
o
12V
TC = 25 C
TC = 150 C
16
12
IC = 15A
30A
8
60A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
4
20
3
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGPF4565 — 650 V Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
15
10000
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
Capacitance [pF]
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25 C
12
200V
9
VCC = 100V
400V
6
3
Cres
o
TC = 25 C
0
10
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
8
16
24
Gate Charge, Qg [nC]
32
40
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
10
td(off)
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
o
TC = 25 C
o
TC = 25 C
o
TC = 150 C
o
TC = 150 C
10
5
0
10
20
30
40
Gate Resistance, RG [Ω]
0
50
10
20
Figure 11. Switching Loss vs.
Gate Resistance
50
100
Eoff
tr
Switching Time [ns]
Switching Loss [mJ]
40
Figure 12. Turn-on Characteristics vs.
Collector Current
1000
Eon
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(on)
10
Common Emitter
VGE = 15V, RG = 5Ω
o
o
TC = 25 C
TC = 25 C
o
o
TC = 150 C
TC = 150 C
10
30
Gate Resistance, RG [Ω]
0
10
20
30
40
Gate Resistance, RG [Ω]
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
1
10
50
20
30
40
50
60
Collector Current, IC [A]
4
www.fairchildsemi.com
FGPF4565 — 650 V Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
1000
1000
Common Emitter
VGE = 15V, RG = 5Ω
o
Eoff
TC = 25 C
Switching Loss [mJ]
Switching Time [ns]
o
TC = 150 C
td(off)
100
tf
100
Eon
Common Emitter
VGE = 15V, RG = 5Ω
o
TC = 25 C
o
TC = 150 C
10
10
20
30
40
50
10
10
60
20
30
40
50
60
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
5
0.5
1
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
-5
10
-4
10
-3
10
-2
-1
10
10
0
10
1
10
2
10
Rectangular Pulse Duration [sec]
©2014 Fairchild Semiconductor Corporation
FGPF4565 Rev. C0
5
www.fairchildsemi.com
FGPF4565 — 650 V Field Stop Trench IGBT
Typical Performance Characteristics
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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