FGPF70N30TTU

FGPF70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint Application . PDP System GC E TO-220F Absolute Maximum Ratings Symbol Description Ratings Units 300 V VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage ±30 V IC pulse(1)* Pulsed Collector Current @ TC = 25oC 160 A Maximum Power Dissipation @ TC = 25oC 49.2 W PD Maximum Power Dissipation o @ TC = 100 C 19.7 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. Max. -- 2.54 o C/W 62.5 o C/W -- Units Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj ©2007 Fairchild Semiconductor Corporation FGPF70N30T Rev. A 1 www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT June 2007 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF70N30T FGPF70N30TTU TO-220F Tube 50ea - Electrical Characteristics T C Symbol = 25oC unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 300 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA -- 0.2 -- V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 400 nA IC = 250uA, VCE = VGE 3.0 4.5 5.5 V IC =20A, VGE = 15V -- 1.2 1.5 V IC =40A, VGE = 15V -- 1.5 -- V IC =70A, VGE = 15V TC = 25oC -- 1.8 -- V IC = 70A, VGE = 15V TC = 125oC -- 1.9 -- V -- 3000 -- pF VCE = 30V, VGE = 0V f = 1MHz -- 160 -- pF -- 110 -- pF On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 200V, IC = 40A RG = 15Ω, VGE = 15V Resistive Load, TC = 25oC VCC = 200V, IC = 40A RG = 15Ω, VGE = 15V Resistive Load, TC = 125oC VCE = 200V, IC = 40A VGE = 15V 2 FGPF70N30T Rev. A -- 32 -- ns -- 90 -- ns -- 175 -- ns -- 170 300 ns -- 30 -- ns -- 90 -- ns -- 185 -- ns -- 235 -- ns -- 125 -- nC -- 25 -- nC -- 55 -- nC www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 160 160 o TC = 25 C 20V 15V 12V 120 80 VGE = 8V 40 2 4 6 Collector-Emitter Voltage, VCE [V] 80 VGE = 8V 40 0 8 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 160 160 Common Emitter Common Emitter VGE = 15V 100 VCE = 20V o o TC = 25 C 120 Collector Current, IC [A] Collector Current, IC [A] 20V 15V 12V 0 0 o TC = 125 C 80 40 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 40A IC = 20A 12 3 Common Emitter o T = 25 C C 16 12 8 40A 4 70A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGPF70N30T Rev. A 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 1.6 0.8 25 10 Figure 6. Saturation Voltage vs. VGE 70A 1.2 o TC = 125 C 2 Common Emitter VGE = 15V 2.0 TC = 25 C 1 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.4 10V 120 0 Collector-Emitter Voltage, VCE [V] o TC = 125 C 10V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 6000 20 Collector-Emitter Voltage, VCE [V] Figure 8. Capacitance Characteristics Common Emitter VGE = 0V, f = 1MHz Common Emitter o T = 125 C 5000 C o TC = 25 C Capacitance [pF] 16 12 8 Ciss 3000 2000 Coss 40A 4 1000 70A 0 4000 IC = 20A 4 Crss 0 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate Charge Characteristics 30 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 15 Common Emitter IC MAX (Pulsed) 12 Collector Current, IC [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C Vcc = 200V 100V 9 6 100µs 100 1ms 10 IC MAX (Continuous) 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 0.1 3 0.01 0.1 0 0 30 60 90 120 Gate Charge, Qg [nC] 150 10ms DC Operation 1 10 100 Collector - Emitter Voltage, VCE [V] 500 Figure 12. Turn-off Characteristics vs. Gate Resistance Figure 11. Turn-on Characteristics vs. Gate Resistance 3000 300 Switching Time [ns] Switching Time [ns] 1000 100 tr Common Emitter VCC = 200V, VGE = 15V IC = 40A td(on) tf 100 Common Emitter VCC = 200V, VGE = 15V IC = 40A td(off) o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 10 10 0 20 40 60 80 0 100 Gate Resistance, RG [Ω] 40 60 80 100 Gate Resistance, RG [Ω ] 4 FGPF70N30T Rev. A 20 www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-on Characteristics vs. Collector Current 500 Figure 14. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 15Ω Common Emitter VGE = 15V, RG = 15Ω o o TC = 25 C TC = 25 C tr TC = 125 C o 100 td(on) 10 0 20 40 60 80 TC = 125 C Switching Time [ns] Switching Time [ns] o tf td(off) tf 100 100 0 20 Collector Current, IC [A] 40 60 80 100 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current 10000 2000 Common Emitter VGE = 15V, RG = 15Ω 1000 o Eoff TC = 25 C 100 Switching Loss [uJ] Switching Loss [uJ] o Eon Common Emitter VCC = 200V, VGE = 15V IC = 40A TC = 125 C 1000 100 Eon o TC = 25 C Eoff o TC = 125 C 10 0 20 40 60 80 Gate Resistance, RG [Ω] 10 100 0 20 40 60 80 100 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 0.5 1 0.2 0.1 0.05 PDM 0.1 0.02 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 single pulse 0.01 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] 5 FGPF70N30T Rev. A 10 100 www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT Typical Performance Characteristics (Continued) 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 6 FGPF70N30T Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT TO-220F TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® EcoSPARK FACT Quiet Series™ ® FACT ® FAST FastvCore™ FPS™ ® FRFET SM Global Power Resource Green FPS™ ® POWEREDGE Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ ® SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ ® OPTOLOGIC ® OPTOPLANAR PDP-SPM™ ® Power220 ® Power247 SuperSOT™-8 SyncFET™ ® The Power Franchise ™ TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ ® UHC UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I29 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com