FGY100T65SCDT

FGY100T65SCDT Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A General Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. www.onsemi.com Features G • • • • • • • • • C Maximum Junction Temperature: TJ = 175°C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A High Input Impedance Fast Switching Short Cirruit Rated 5 ms Tighten Parameter Distribution These Devices are Pb−Free and are RoHS Compliant E TO−247 CASE 340CD ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Applications • Solar, UPS, Motor Control, ESS, HVAC ABSOLUTE MAXIMUM RATINGS (at TC = 25°C, Unless otherwise specified) Value Unit VCES Collector to Emitter Voltage Parameter 650 V VGES Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V Collector Current @ TC = 25°C 200 A Collector Current @ TC = 100°C 100 A ILM (Note 1) Clamped Inductive Load Current @ TC = 25°C 300 A ICM (Note 2) Pulsed Collector Current 300 A Diode Forward Current @ TC = 25°C @ TC = 100°C 200 100 Pulsed Diode Maximum Forward Current 300 A Maximum Power Dissipation @ TC = 25°C 750 W Maximum Power Dissipation @ TC = 100°C 375 W Symbol IC IF IFM (Note 2) PD A TJ Operating Junction Temperature −55 to +175 °C Tstg Storage Temperature Range −55 to +175 °C TL TSC (Note 3) Maximum Lead Temp. for Soldering Purposes, 1/8″ from Case for 5 seconds Short circuit withstanding time @ TC = 150°C 300 °C 5 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 375 A, RG = 10 W, Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. Test condition: VGE = 15 V, VCC = 400 V. © Semiconductor Components Industries, LLC, 2017 October, 2017 − Rev. 2 1 Publication Order Number: FGY100T65SCDT/D FGY100T65SCDT THERMAL CHARACTERISTICS Value Unit RqJC (IGBT) Symbol Thermal Resistance, Junction to Case, Max. Parameter 0.2 _C/W RqJC (Diode) Thermal Resistance, Junction to Case, Max. 0.3 _C/W Thermal Resistance, Junction to Ambient, Max. 40 _C/W RqJA ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 650 − − V OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage IC = 1 mA, Reference to 25_C − 0.56 − V/_C ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA DBVCES/ DTJ ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 100 mA, VCE = VGE 3.5 5.3 6.9 V VCE(sat) Collector to Emitter Saturation Voltage IC = 100 A, VGE = 15 V − 1.5 1.9 V IC = 100 A, VGE = 15 V, TC = 175_C − 1.97 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 6310 − pF − 384 − pF − 46 − pF − 84 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS td(on) tr Turn-On Delay Time − 147 − ns Turn-Off Delay Time − 216 − ns Fall Time − 133 − ns Eon Turn-On Switching Loss − 5.4 − mJ Eoff Turn-Off Switching Loss − 3.8 − mJ Ets Total Switching Loss − 9.2 − mJ td(on) Turn-On Delay Time − 80 − ns − 160 − ns Turn-Off Delay Time − 244 − ns Fall Time − 166 − ns Eon Turn-On Switching Loss − 9.7 − mJ Eoff Turn-Off Switching Loss − 5.2 − mJ Ets Total Switching Loss − 14.9 − mJ Qg Total Gate Charge − 157 − nC Qge Gate to Emitter Charge − 43 − nC Qgc Gate to Collector Charge − 46 − nC td(off) tf tr td(off) tf Rise Time VCC = 400 V, IC = 100 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 25_C Rise Time VCC = 400 V, IC = 100 A, RG = 4.7 W, VGE = 15 V, Inductive Load, TC = 175_C VCE = 400 V, IC = 100 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FGY100T65SCDT ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Parameter Symbol VFM Erec trr Qrr Test Conditions Diode Forward Voltage IF = 100 A TC = 25_C TC = 175_C Min Typ Max − − 1.68 1.45 2.1 − − 96 − V Reverse Recovery Energy IF = 100 A, dIF/dt = 200 A/ms, TC = 175_C Diode Reverse Recovery Time IF = 100 A, dIF/dt = 200 A/ms TC = 25_C TC = 175_C − − 62 251 − − IF = 100 A, dIF/dt = 200 A/ms TC = 25_C TC = 175_C − − 164 2736 − − Diode Reverse Recovery Charge Unit mJ ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Pare Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGY100T65SCDT FGY100T65SCDT TO−247H03 Tube − − 30 www.onsemi.com 3 FGY100T65SCDT TYPICAL PERFORMANCE CHARACTERISTICS 300 o TC = 25 C o 250 10V 200 150 100 VGE = 8V 12V 200 10V 150 100 50 VGE = 8V 50 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] Figure 1. Typical Output Characteristics 4 Collector Current, IC [A] o TC = 25 C o TC = 175 C 200 Common Emitter VGE = 15V Collector−Emitter Voltage, VCE [V] Common Emitter VGE = 15V 250 150 100 50 3 200A 2 100A IC = 50A 1 −100 0 0 1 2 3 4 5 −50 0 50 100 150 200 o Collector−Emitter Case Temperature, TC [ C] Collector−Emitter Voltage, VCE [V] Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 20 20 Common Emitter Common Emitter o o Collector−Emitter Voltage, VCE [V] TC = 25 C 16 12 100A 8 200A IC = 50A 4 0 6 Figure 2. Typical Output Characteristics 300 Collector−Emitter Voltage, VCE [V] 20V 15V TC = 175 C Collector Current, IC [A] 250 Collector Current, IC [A] 300 20V 15V 12V TC = 175 C 16 12 100A 8 IC = 50A 200A 4 0 4 8 12 16 4 20 Gate−Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. VGE 8 12 16 Gate−Emitter Voltage, VGE [V] 20 Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 FGY100T65SCDT TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 10000 15 Common Emitter 1000 o Gate−Emitter Voltage, VGE [V] Capacitance [pF] Cies Coes Cres 100 Common Emitter VGE = 0V, f = 1MHz TC = 25 C 12 400V VCC = 200V 9 300V 6 3 o TC = 25 C 10 0 1 10 0 30 40 Collector−Emitter Voltage, VCE [V] Figure 7. Capacitance Characteristics 120 160 200 Figure 8. Gate Charge Characteristics 1000 1000 Common Emitter VCC = 400V, V GE = 15V IC = 100A td(off) o Switching Time [ns] TC = 25 C o TC = 175 C tr 100 td(on) tf Common Emitter VCC = 400V, VGE = 15V IC = 100A 100 o TC = 25 C o TC = 175 C 50 0 10 20 30 40 50 0 Gate Resistance, RG [ W ] Figure 9. Turn-on Characteristics vs. Gate Resistance 10 20 30 40 Gate Resistance, RG [ W ] 50 Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 30 Switching Time [ns] Eon Switching Loss [mJ] Switching Time [ns] 80 Gate Charge, Q g [nC] 10 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 100A tr 100 td(on) Common Emitter VGE = 15V, RG = 4.7 W o o TC = 25 C TC = 25 C o o TC = 175 C 1 TC = 175 C 10 0 10 20 30 40 Gate Resistance, RG [ W ] 50 0 50 100 150 200 Collector Current, IC [A] Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn-on Characteristics vs. Collector Current www.onsemi.com 5 FGY100T65SCDT TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 100 1000 Common Emitter VGE = 15V, RG = 4.7 W Common Emitter VGE = 15V, R G = 4.7 W o o TC = 25 C o TC = 175 C Switching Loss [mJ] Switching Time [ns] TC = 25 C tf td(off) 100 Eon o TC = 175 C 10 Eoff 1 50 0.5 50 0 100 150 200 0 50 100 150 200 Collector Current, I C [A] Collector Current, IC [A] Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 450 500 Square Wave DC o o TC = 25 C 270 10 m s 100 VGE = 15/0V, R G = 4.7 W Collector Current, Ic [A] Collector Current, [A] TJ