IGBT - Field Stop, Trench,
Soft Fast Recovery Diode
650 V, 160 A
FGY160T65SPD-F085
Benefits
• Very Low Conduction and Switching Losses for a High Efficiency
•
•
•
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Operation in Various Applications
Rugged Transient Reliability
Outstanding Parallel Operation Performance with Balance Current
Sharing
Low EMI
C
Features
•
•
•
•
•
•
•
•
•
•
AEC−Q101 Qualified and PPAP Capable
Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co−Efficient
Tight Parameter Distribution
High Input Impedance
100% of the Parts are Dynamically Tested
Short circuit ruggedness > 6 ms @ 25°C
Copacked with Soft, Fast Recovery Extremefast Diode
This Device is Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
•
•
•
Traction Inverter for HEV/EV
Auxiliary DC/AC Converter
Motor Drives
Other Power−Train Applications Requiring High Power Switch
G
E
G
C
E
TO−247−3LD
CASE 340CU
MARKING DIAGRAM
$Y&Z&3&K
FGY160T
65SPD
&Y
&Z
&3
&K
FGY160T65SPD
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
November, 2019 − Rev. 3
1
Publication Order Number:
FGY160T65SPD−F085/D
FGY160T65SPD−F085
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Unit
VCES
Collector to Emitter Voltage
650
V
VGES
Gate to Emitter Voltage
±20
V
Transient Gate to Emitter Voltage
±30
V
Collector Current @ TC = 25°C (Note 1)
240
A
Collector Current @ TC = 100°C
220
A
IC
INominal
Parameter
Nominal Current
160
A
ICM
Pulsed Collector Current
480
A
IFM
Diode Forward Current @ TC = 25°C (Note 1)
240
A
Diode Forward Current @ TC = 100°C
188
A
Maximum Power Dissipation @ TC = 25°C
882
W
Maximum Power Dissipation @ TC = 100°C
441
W
PD
SCWT
Short Circuit Withstand Time @ TC = 25°C
6
ms
DV/Dt
Voltage Transient Ruggedness (Note 2)
10
V/ns
TJ
Operating Junction Temperature
−55 to +175
°C
Tstg
Storage Temperature Range
−55 to +175
°C
TL
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Limited to bondwire.
2. VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load.
THERMAL CHARACTERISTICS
Symbol
Typ.
Max.
Units
RqJC (IGBT)
Thermal Resistance, Junction to Case
−
0.17
°C/W
RqJC (Diode)
Thermal Resistance, Junction to Case
−
0.32
°C/W
Thermal Resistance, Junction to Ambient
−
40
°C/W
RqJA
Parameter
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Packing Type
Qty per Tube
FGY160T65SPD
FGY160T65SPD−F085
TP−247−3LD
Tube
30 ea
ELECTRICAL CHARACTERISTICS OF THE IGBT (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
650
−
−
V
DBVCES/
DTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
−
0.6
−
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
−
−
40
mA
IGES
G−E Leakage Current
VGE = VGES, VCE = 0 V
−
−
±250
nA
4.3
5.3
6.3
V
ON CHARACTERISTICS
VGE(th)
G−E Threshold Voltage
IC = 160 mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 160 A, VGE = 15 V
−
1.6
2.05
V
IC = 160 A, VGE = 15 V,
TJ = 175°C
−
2.15
−
V
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2
FGY160T65SPD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (TJ = 25°C unless otherwise noted) (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
−
6710
−
pF
−
450
−
pF
DYNAMIC CHARACTERISTICS
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
RG
Internal Gate Resistance
−
55
−
pF
f = 1 MHz
−
3
−
W
VCC = 400 V, IC = 160 A,
RG = 5 W, VGE = 15 V,
Inductive Load, TJ = 25°C
−
53
−
ns
−
197
−
ns
Turn-Off Delay Time
−
98
−
ns
Fall Time
−
141
−
ns
Eon
Turn-On Switching Loss
−
12.4
−
mJ
Eoff
Turn-Off Switching Loss
−
5.7
−
mJ
Ets
Total Switching Loss
−
18.1
−
mJ
Td(on)
Turn-On Delay Time
−
52
−
ns
−
236
−
ns
Turn-Off Delay Time
−
104
−
ns
SWITCHING CHARACTERISTICS
Td(on)
Tr
Td(off)
Tf
Tr
Td(off)
Tf
Turn-On Delay Time
Rise Time
VCC = 400 V, IC = 160 A,
RG = 5 W, VGE = 15 V,
Inductive Load, TJ = 175°C
Rise Time
Fall Time
−
204
−
ns
Eon
Turn-On Switching Loss
−
21
−
mJ
Eoff
Turn-Off Switching Loss
−
8.5
−
mJ
Ets
Total Switching Loss
−
29.5
−
mJ
Qg
Total Gate Charge
−
163
245
nC
Qge
Gate to Emitter Charge
−
50
−
nC
Qgc
Gate to Collector Charge
−
49
−
nC
VCE = 400 V, IC = 160 A,
VGE = 15 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Symbol
VFM
Erec
Trr
Qrr
Parameter
Min.
Typ.
Max.
Unit
TJ = 25°C
−
1.4
1.7
V
TJ = 175°C
−
1.35
−
TJ = 25°C
−
598
−
TJ = 175°C
−
4000
−
Diode Reverse Recovery
Time
TJ = 25°C
−
132
−
TJ = 175°C
−
245
−
Diode Reverse Recovery
Charge
TJ = 25°C
−
3.3
−
TJ = 175°C
−
12.5
−
Diode Forward Voltage
Reverse Recovery Energy
Test Conditions
IF = 160 A
VCE = 400 V, IF = 160 A,
DIF/Dt = 1000 A/ms
mJ
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn Off Switching SOA Characteristics
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5
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 13. Turn−on Characteristics vs.
Gate Resistance
Figure 14. Turn−off Characteristics vs.
Gate Resistance
Figure 15. Turn−on Characteristics vs.
Collector Current
Figure 16. Turn−off Characteristics vs.
Collector Current
100
50
Common Emitter
V GE = 15V, R G = 5 W
o
Eon
Switching Loss [mJ]
Switching Loss [mJ]
TC = 25 C
10
Eoff
Common Emitter
VCC = 400V, V GE = 15V
I C = 160A
o
TC = 175 C
10
E on
E off
1
o
TC = 25 C
o
1
TC = 175 C
0
10
20
30
40
Gate Resistance, R G [ W]
0.1
50
Figure 17. Switching Loss vs. Gate Resistance
0
20
40
60
80
100 120
Collector Current, IC [A]
140
160
Figure 18. Switching Loss vs. Collector Current
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6
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
Figure 23. Collector to Emitter Breakdown
Voltage vs. Junction Temperature
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7
FGY160T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 24. Transient Thermal Impedance of IGBT
Figure 25. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CU
ISSUE A
DOCUMENT NUMBER:
DESCRIPTION:
98AON13773G
TO−247−3LD
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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