FGY40T120SMD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGY40T120SMD 1200 V, 40 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance Applications • RoHS Compliant • Solar Inverter, Welder, UPS & PFC applications. C G G C Power TO247 (TO-247H03) E Absolute Maximum Ratings T C Symbol VCES VGES IC = 25°C unless otherwise noted FGY40T120SMD Unit Collector to Emitter Voltage Description 1200 V Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V 80 A @ TC = Collector Current @ TC = 100oC Clamped Inductive Load Current ICM (2) Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current IFM PD TJ 25oC Collector Current ILM (1) IF E @ TC = 25oC @ TC = 25oC @ TC = 100oC Diode Maximum Forward Current 40 A 160 A 160 A 80 A 40 A 240 A Maximum Power Dissipation @ TC = 25oC 882 W Maximum Power Dissipation @ TC = 100oC 441 W Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds -55 to +175 o -55 to +175 oC o 300 C C Thermal Characteristics Typ. Max. Unit RθJC(IGBT) Symbol Thermal Resistance, Junction to Case Parameter -- 0.17 oC/W RθJC(Diode) Thermal Resistance, Junction to Case -- 0.55 oC/W RθJA Thermal Resistance, Junction to Ambient -- 40 o C/W Notes: 1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 Ω , Inductive Load 2. Limited by Tjmax ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 1 www.fairchildsemi.com FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT March 2016 Device Marking Device Package Reel Size Tape Width Quantity FGY40T120SMD FGY40T120SMD TP-247 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 40 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.9 6.2 7.5 V IC = 40 A, VGE = 15 V TC = 25oC - 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 175oC - 2.0 - V - 4300 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz - 180 - pF - 100 - pF Switching Characcteristics td(on) Turn-On Delay Time - 40 - ns tr Rise Time - 47 - ns td(off) Turn-Off Delay Time - 475 - ns tf Fall Time - 10 - ns Eon Turn-On Switching Loss - 2.7 - mJ Eoff Turn-Off Switching Loss - 1.1 - mJ VCC = 600 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 3.8 - mJ td(on) Turn-On Delay Time - 40 - ns tr Rise Time - 55 - ns td(off) Turn-Off Delay Time - 520 - ns tf Fall Time - 50 - ns Eon Turn-On Switching Loss - 3.4 - mJ Eoff Turn-Off Switching Loss - 2.5 - mJ Ets Total Switching Loss - 5.9 - mJ - 370 - nC - 23 - nC - 210 - nC Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 VCC = 600 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 175oC VCE = 600 V, IC = 40 A, VGE = 15 V 2 www.fairchildsemi.com FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol VFM Parameter Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit IF = 40 A, TC = 25oC - 3.8 4.8 V IF = 40 A, TC = 175oC - 2.7 - V VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 25oC - 65 - ns - 234 - nC VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 175oC - 97 - uJ - 200 - ns - 1800 - nC 3 www.fairchildsemi.com FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the DIODE Figure 1. Typical Output Characteristics 300 Figure 2. Typical Output Characteristics 300 o TC = 25 C 20V Collector Current, IC [A] Collector Current, IC [A] 200 12V 150 100 VGE=10V 150 0 1 2 3 4 5 6 7 8 Collector-Emitter Voltage, VCE [V] 9 VGE=10V 0 10 0 4 Collector Emitter Voltage, VCE [V] o TC = 25 C 120 o TC = 175 C --- 80 40 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] Collector Emitter Voltage, VCE [V] o 16 80A 40A IC=20A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 10 3 80A 40A 2 IC=20A 20 TC = 25 C 8 9 50 75 100 125 150 o Case Temperature TC [ C] 175 Figure 6. Saturation Voltage vs. VGE Common Emitter 12 2 3 4 5 6 7 8 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 1 25 5 Figure 5. Saturation Voltage vs. VGE 20 1 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter VGE = 15V Collector Current, IC [A] 12V 100 160 Collector Emitter Voltage, VCE [V] 15V 50 Figure 3. Typical Saturation Voltage Characteristics 0 17V 200 50 0 20V 250 250 0 o TC = 175 C 15V 17V o TC = 175 C 16 4 80A 12 40A 8 IC=20A 4 0 20 Common Emitter 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 300 6000 VCC = 600 V Common Emitter VGE = 0V , f = 1MHz o Ciss TC = 25 C 4000 3000 2000 Coss 1000 Load Current: peak of square wave 250 Collector Current, IC A] 5000 Cappacitance [pF] Figure 8. Load Current vs. Frequency 200 o TC = 100 C 150 100 Duty Cycle: 50% o TC = 100 C 50 Crss 1 0 1k 10 Power Dissipation = 441 W 10k Collector-Emitter Voltage, VCE [V] 100k 1M Switching Frequency, f [Hz] Figure 9. Turn-on Characteristics vs. Gate Resistance Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 1000 Switching Time [ns] Switching Time [ns] tr 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 td(off) 100 tf 10 Common Emitter VCC = 600V, VGE = 15V, IC = 40A o TC = 25 C o o TC = 175 C 1 1 0 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 11. Swithcing Loss vs. Gate Resistance TC = 25 C 0 10 , o TC = 175 C 20 30 40 50 Gate Resistance, RG [Ω] 60 Figure 12. Turn-on Characteristics vs. Collector Current tr 10 Eon 100 Switching Time [ns] Switching Loss [mJ] 70 Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 25 C 0.1 td(on) Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C 10 o o TC = 175 C 0 10 20 30 40 50 Gate Resistance, RG [Ω] ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 TC = 175 C 60 10 70 20 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Swithcing Loss vs. Collector Current 30 1000 10 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Eon Eoff 1 Common Emitter VGE = 15V, RG = 10Ω o Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C 1 20 40 , TC = 25 C o TC = 175 C o TC = 175 C 60 0.1 80 10 20 30 40 50 60 70 Collector Current, IC [A] Figure 15. Gate Charge Characteristics Figure 16. SOA Characteristics 500 15 IcMAX (Pulsed) 12 200V 400V Collector Current, Ic [A] Gate Emitter Voltage, VGE [V] 100 VCC = 600V 9 6 3 10μs IcMAX (Continuous) 10 Single Nonrepetitive o Pulse TC = 25 C 0.1 Curves must be derated linearly with increase in temperature Common Emitter TC = 25 C 0.01 0 50 100 150 200 250 300 Gate Charge, Qg [nC] 350 400 Figure 17. Forward Characteristics 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 18. Reverse Recovery Current Reverse Recovery Currnet, Irr [A] 21 100 Forward Current, IF [A] 100μs 1ms 10ms DC 1 o 0 80 Collector Current, IC [A] 10 o TC = 25 C o TC = 25 C 18 T = 175oC C diF/dt = 200A/μs 15 12 diF/dt = 100A/μs 9 diF/dt = 200A/μs 6 diF/dt = 100A/μs 3 o TC = 175 C --- 1 0 1 2 3 4 Forward Voltage, VF [V] ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 0 5 6 0 20 40 60 Forward Current, IF [A] 80 www.fairchildsemi.com Figure 19. Reverse Recovery Time Figure 20. Stored Charge 3000 360 o o o 300 TC = 175 C Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] TC = 25 C --- 240 180 di/dt = 100A/μs di/dt = 200A/μs 120 60 0 0 20 40 60 TC = 25 C 2500 --- 2000 1500 di/dt = 100A/μs 1000 di/dt = 200A/μs 500 0 80 o TC = 175 C 0 20 40 60 80 Forward Current, IF [A] Forward Current, IF [A] Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.3 0.1 0.5 0.3 0.1 0.05 0.02 0.01 PPDM DM 0.01 t1t1 t2t2 single pulse 1E-3 1E-5 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode Thermal Response [Zthjc] 0.8 0.5 0.3 0.1 0.1 0.05 PDM 0.02 t1 0.01 0.01 single pulse 0.005 1E-5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2015 Fairchild Semiconductor Corporation FGY40T120SMD Rev. 1.2 7 www.fairchildsemi.com FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics 15.87 15.37 A 4.82 4.58 12.25 11.75 4.52 4.12 B 5.58 5.34 2.20 1.80 13.80 13.40 1.35 0.51 17.03 16.63 20.82 20.32 3.93 3.69 2.39 2.10 1.75 20.10 19.90 3.20 2.87 1.30 1.10 0.254 M 2.66 2.29 B AM FRONT VIEW 0.71 0.51 2X 5.45 SIDE VIEW NOTES: A. THIS PACKAGE DOES NOT CONFORM TO ANY STANDARDS. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. E. DRAWING FILE NAME: TO247H03REV1 BOTTOM VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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