FGY60T120SQDN

Ultra Field Stop IGBT, 1200 V, 60 A FGY60T120SQDN General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com C Features • • • • • • • G Extremely Efficient Trench with Field Stop Technology Maximum Junction Temperature TJ = 175°C Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A 100% of the Parts Tested for ILM (Note 1) Soft Fast Reverse Recovery Diode Optimized for High Speed Switching RoHS Compliant E Applications • Solar Inverter, UPS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Description Value Unit VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V Collector Current @ (TC = 25°C) 120 A Collector Current @ (TC = 100°C) 60 A ILM (1) Pulsed Collector Current @ (TC = 25°C) 240 A ICM (2) Pulsed Collector Current 240 A Diode Forward Current @ (TC = 25°C) 120 A Diode Forward Current @ (TC=100°C) 60 A IFM Pulsed Diode Max. Forward Current 240 A PD Maximum Power Dissipation @ (TC = 25°C) @ (TC=100°C) 517 259 IC IF W W TJ Operating Junction Temperature −55 to +175 °C Tstg Storage Temperature Range −55 to +175 °C TL Maximum Lead Temp. For soldering Purposes, 1/8” from case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 800 V, VGE = 15 V, IC = 240 A, RG = 68 W, Inductive Load 2. Repetitive rating: Pulse width limited by max. Junction temperature © Semiconductor Components Industries, LLC, 2018 November, 2020 − Rev. 3 1 G C E Power TO247 (TO−247H03) MARKING DIAGRAM $Y&Z&3&K FGY60T120 SQDN &Y = ON Semiconductor Logo &3 = Data Code (Year & Week) &K = Lot FGY60T120SQDN= Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Publication Order Number: FGY60T120SQDN/D FGY60T120SQDN THERMAL CHARACTERISTICS Symbol Parameter FGY60T120SQDN Unit °C/W RqJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.29 RqJC(Diode) Thermal Resistance, Junction to Case, Max. 0.42 RqJA Thermal Resistance, Junction to Ambient, Max. 40 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 500 mA 1200 − − V ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 400 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±200 nA IC = 400 mA, VCE = VGE 4.5 5.5 6.5 V IC = 60 A, VGE = 15 V − 1.7 1.95 V IC = 60 A, VGE = 15 V, TC = 175°C − 2.3 − V − 7147 − pF − 203 − pF − 114 − pF − 52 − ns − 84 − ns − 296 − ns − 56 − ns OFF CHARACTERISTICS ON CHARACTERISTICS VGE(th) G−E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time tr Rise Time td(off) Turn−Off Delay Time tf Fall Time Eon Turn−On Switching Loss − 5.15 − mJ Eoff Turn−Off Switching Loss − 1.82 − mJ Ets Total Switching Loss − 6.97 − mJ td(on) Turn−On Delay Time − 40 − ns tr Rise Time − 72 − ns td(off) Turn−Off Delay Time − 324 − ns tf Fall Time − 144 − ns Eon Turn−On Switching Loss − 7.18 − mJ Eoff Turn−Off Switching Loss − 3.1 − mJ Ets Total Switching Loss − 10.28 − mJ − 311 − nC − 57 − nC − 153 − nC Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 600 V, IC = 60 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 25°C VCC = 600 V, IC = 60 A, RG = 10 W, VGE = 15 V, Inductive Load, TC = 175°C VCE = 600 V, IC = 60 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FGY60T120SQDN ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Test Condition Min. Typ. Max. TC = 25°C − 3.4 4 TC = 175°C − 3.2 − TC = 25°C − 91 − TC = 175°C − 309 − TC = 25°C − 860 − TC = 175°C − 4902 − TC = 25°C − 19 − TC = 175°C − 32 − IF = 60 A Qrr Irrm Diode Reverse Recovery Charge Diode Reverse Recovery Current PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Quantity FGY60T120SQDN FGY60T120SQDN TO−247−3LD (Pb−Free) 30/Tube www.onsemi.com 3 Unit V ns nC A FGY60T120SQDN TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. VGE www.onsemi.com 4 FGY60T120SQDN TYPICAL PERFORMANCE CHARACTERISTICS Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance Figure 11. Turn−on Characteristics vs. Collector Current Figure 12. Turn−off Characteristics vs. Collector Current www.onsemi.com 5 FGY60T120SQDN TYPICAL PERFORMANCE CHARACTERISTICS Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics Figure 18. Reverse Recovery Time vs. diF/dt Figure 17. Forward Characteristics www.onsemi.com 6 FGY60T120SQDN TYPICAL PERFORMANCE CHARACTERISTICS Figure 19. Reverse Recovery Charge vs. diF/dt Figure 20. Reverse Recovery Current vs. diF/dt P DM t1 t2 Figure 21. Transient Thermal Impedance if IGBT P DM t1 t2 Figure 22. Transient Thermal Impedance if Diode www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CD ISSUE A DATE 18 SEP 2018 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13857G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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