FGY75N60SMD

FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant Application • Solar Inverter, UPS, Welder, SMPS, PFC C G G C E Power TO247 (TO-247D03) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD Description Ratings Unit Collector to Emitter Voltage 600 V Gate to Emitter Voltage ± 20 V ± 30 V 150 A Transient Gate to Emitter Voltage Collector Current @ TC = 25oC Collector Current o @ TC = 100 C 75 A Pulsed Collector Current @ TC = 25oC 225 A Diode Forward Current @ TC = 25oC 75 A Diode Forward Current o @ TC = 100 C Pulsed Diode Maximum Forward Current o 50 A 225 A W Maximum Power Dissipation @ TC = 25 C 750 Maximum Power Dissipation @ TC = 100oC 375 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature. ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. C2 1 www.fairchildsemi.com FGY75N60SMD — 600 V, 75 A Field Stop IGBT June 2014 Symbol Parameter Typ. Max. Unit o RθJC(IGBT) Thermal Resistance, Junction to Case - 0.2 RθJC(Diode) Thermal Resistance, Junction to Case - 0.48 oC/W C/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W Package Marking and Ordering Information Part Number Top Mark FGY75N60SMD FGY75N60SMD Package Packing Method Reel Size TO-247D03 Electrical Characteristics of the IGBT Symbol Parameter Tube Tape Width Quantity N/A 30 N/A TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.67 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE 3.5 5.0 6.5 V IC = 75 A, VGE = 15 V - 1.90 2.50 V IC = 75 A, VGE = 15 V, TC = 175oC - 2.14 - V - 3800 - pF - 390 - pF - 105 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 24 32 ns tr Rise Time - 56 73 ns td(off) Turn-Off Delay Time - 136 177 ns tf Fall Time - 22 29 ns Eon Turn-On Switching Loss - 2.3 2.99 mJ Eoff Turn-Off Switching Loss - 0.77 1.00 mJ VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 3.07 3.99 mJ td(on) Turn-On Delay Time - 23 - ns tr Rise Time - 53 - ns td(off) Turn-Off Delay Time - 146 - ns tf Fall Time - 15 - ns Eon Turn-On Switching Loss - 3.60 - mJ Eoff Turn-Off Switching Loss - 1.11 - mJ Ets Total Switching Loss - 4.71 - mJ ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. C2 VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGY75N60SMD — 600 V, 75 A Field Stop IGBT Thermal Characteristics Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 75 A, VGE = 15 V Electrical Characteristics of the Diode Symbol TC = 25°C unless otherwise noted Parameter - 248 370 nC - 28 42 nC - 129 195 nC TC = 25°C unless otherwise noted Test Conditions Min. o Typ. Max TC = 25 C - 1.75 2.1 TC = 175oC - 1.35 - Reverse Recovery Energy TC = 175oC - 0.14 - trr Diode Reverse Recovery Time TC = 25oC - 41 55 TC = 175oC - 126 - Qrr Diode Reverse Recovery Charge TC = 25oC - 81 115 o - 736 - VFM Diode Forward Voltage Erec IF = 50 A IF = 50 A, diF/dt = 200 A/μs VR=400 V ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. C2 TC = 175 C 3 Units V mJ ns nC www.fairchildsemi.com FGY75N60SMD — 600 V, 75 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 225 225 o TC = 25 C 20V 10V 135 90 VGE = 8V 45 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 135 90 VGE = 8V 45 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 4. Transfer Characteristics 225 Common Emitter VCE = 20V Common Emitter VGE = 15V 180 TC = 25oC Collector Current, IC [A] Collector Current, IC [A] 10V 0 225 o TC = 175 C 135 90 o 180 TC = 25 C o TC = 175 C 135 45 90 45 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 3.5 Collector-Emitter Voltage, VCE [V] 15V 180 5 Figure 3. Typical Saturation Voltage Characteristics 0 20V 12V 12V 180 o TC = 175 C 15V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 3.0 150A 2.5 75A 2.0 IC = 40A 1.5 Common Emitter o TC = -40 C 16 12 8 150A 4 75A IC = 40A 1.0 25 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. C2 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGY75N60SMD — 600 V, 75 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 12 8 150A 4 75A IC = 40A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 12 8 150A 4 75A IC = 40A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C 6000 Capacitance [pF] 16 Figure 10. Gate charge Characteristics 8000 Cies 4000 Coes 2000 Cres 0 TC = 175 C 0 20 Figure 9. Capacitance Characteristics TC = 25 C, ICE=75A 10 Collector-Emitter Voltage, VCE [V] 5500 VCC = 200V 400V 9 6 3 30 0 50 100 150 200 Gate Charge, Qg [nC] 250 Figure 12. Turn-on Characteristics vs. Gate Resistance 200 Common Emitter VCC = 400V, VGE = 15V IC = 75A o 100 TC = 25 C 1000 300V 12 0 1 Figure 11. Turn-off Characteristics vs. Gate Resistance o TC = 175 C tr Switching Time [ns] Switching Time [ns] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE td(off) 100 tf td(on) Common Emitter VCC = 400V, VGE = 15V IC = 75A o TC = 25 C o 10 TC = 175 C 0 10 20 30 40 10 50 Gate Resistance, RG [Ω ] ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. C2 0 10 20 30 40 50 Gate Resistance, RG [Ω ] 5 www.fairchildsemi.com FGY75N60SMD — 600 V, 75 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Turn-on Characteristics vs. Collector Current 200 1000 Common Emitter VGE = 15V, RG = 3Ω Common Emitter VGE = 15V, RG = 3Ω o 100 o TC = 25 C o TC = 175 C Switching Time [ns] TC = 175 C Switching Time [ns] tr TC = 25 C o td(off) 100 tf td(on) 10 10 0 30 60 90 120 5 150 0 30 Figure 15. Switching Loss vs. Collector Current 90 120 150 Figure 16. Switching Loss vs. Gate Resistance 30 30 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 3Ω 10 o TC = 25 C IC = 75A Eon o TC = 175 C 1 10 Switching Loss [mJ] Switching Loss [mJ] 60 Collector Current, IC [A] Collector Current, IC [A] Eoff o TC = 25 C o TC = 175 C Eon Eoff 1 0.1 0 30 60 90 120 0.5 150 0 10 20 30 40 50 Gate Resistance, RG [Ω ] Collector Current, IC [A] Figure 17. SOA Characteristics Figure 18. Turn off Switching SOA Characteristics 500 300 10μs 100 100μs Collector Current, IC [A] Collector Current, Ic [A] 100 1ms 10 10 ms DC 1 *Notes: o 1. TC = 25 C 10 o 0.1 Safe Operating Area 2. TJ = 175 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, VCE [V] ©2010 Fairchild Semiconductor Corporation FGY75N60SMD Rev. C2 o 1 10 1000 VGE = 15V, TC = 175 C 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGY75N60SMD — 600 V, 75 A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current vs. Frequency 160 Square Wave o TJ