FJA4210OTU

FJA4210 PNP Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted Symbol Parameter Ratings -200 Units V -140 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -10 A IB Base Current (DC) -1.5 A PC Collector Dissipation (TC =25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=-5mA, IE=0 Min. -200 -140 BVCEO Collector-Emitter Breakdown Voltage IC=-50mA, R BE=¥ BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 ICBO Collector Cut-off Current VCB=-200V, IE=0 Emitter Cut-off Current VEB=-6V, IC=0 IEBO hFE * DC Current Gain VCE=-4V, IC=-3A Typ. Max. Units V V -6 V 50 -10 mA -10 mA 180 VCE(sat) Collector-Emitter Saturation Voltage IC=-5A, IB=-0.5A Cob Output Capacitance VCB=-10V, f=1MHz 400 pF VCE=-5V, IC=-1A 30 MHz fT Current Gain Bandwidth * Pulse Test: Pulse Width£300ms, Duty Cycle£2% Product -0.5 V hFE Classification Classification R O Y hFE 50 ~ 100 70 ~ 140 90 ~ 180 © 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 www.fairchildsemi.com 1 FJA4210 — PNP Epitaxial Silicon Transistor October 2008 IB = - 300mA -10 1000 VCE = - 4 V -8 IB = - 200mA -7 IB = - 150mA -6 IB = - 100mA o hFE, DC CURRENT GAIN -9 IC [A], COLLECTOR CURRENT IB = - 250mA IB = - 400mA -5 IB = - 50mA -4 -3 IB = - 20mA -2 Ta = 25 C o Ta = 125 C 100 o Ta = - 25 C -1 -0 -0 -1 -2 -3 10 -0.1 -4 -1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterstic Figure 2. DC current Gain -3.0 -1 IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE -10 -2.5 -2.0 -1.5 -1.0 IC= - 10A -0.5 -0.0 -0.0 IC= - 5A -0.4 -0.8 -1.2 -1.6 -0.1 o Ta = 125 C o Ta = 25 C o Ta = - 25 C -0.01 -0.01 -2.0 -0.1 -1 -10 IC [A], COLLECTOR CURRENT IB [A], BASE CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage -10 -8 -6 o Ta = 25 C -4 -2 o Ta = 125 C o Ta = - 25 C -0 -0.0 -10 -1.0 -1.5 -2.0 IC (DC) t=100ms -1 o TC = 25 C Single Pulse -0.1 -0.5 -10 -100 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE [V], Base-Emitter On VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area © 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 t=10ms IC (Pulse) IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT VCE = - 4 V www.fairchildsemi.com 2 FJA4210 — PNP Epitaxial Silicon Transistor Typical Characteristics FJA4210 — PNP Epitaxial Silicon Transistor Typical Characteristics (Continued) PC[W], COLLECTOR POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 www.fairchildsemi.com 3 FJA4210 — PNP Epitaxial Silicon Transistor Package Dimension (TO-3P) 5.00 4.60 15.80 15.40 1.65 1.45 5.20 4.80 (R0.50) 20.10 19.70 18.90 18.50 3.70 3.30 (1.85) 2.20 1.80 2.60 2.20 20.30 19.70 3.20 2.80 0.55 1.20 0.80 1 3 5.45 0.75 0.55 5.45 (R0.50) NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONING AND TOLERANCING PER ASME14.5 1973. D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILE NAME: TO3P03AREV2. © 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation FJA4210 Rev. C1 www.fairchildsemi.com 5 FJA4210 PNP Epitaxial Silicon Transistor TRADEMARKS