FJAF4210YTU

FJAF4210 PNP Epitaxial Silicon Transistor Features • • • • • Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJAF4310 TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -10 A IB Base Current (DC) -1.5 A PC Collector Dissipation (TC=25°C) 80 W Junction to Case 1.33 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C RθJC Electrical Characteristics Symbol TA=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage IC=-50mA, RBE=∞ Emitter-Base Breakdown Voltage IE=-5mA, IC=0 BVEBO IC=-5mA, IE=0 Min. Typ. Max. Units -200 V -140 V -6 V ICBO Collector Cut-off Current VCB=-200V, IE=0 -10 μA IEBO Emitter Cut-off Current VEB=-6V, IC=0 -10 μA hFE * DC Current Gain VCE=-4V, IC=-3A VCE(sat) Cob fT 50 180 Collector-Emitter Saturation Voltage IC=-5A, IB=-0.5A Output Capacitance VCB=-10V, f=1MHz 400 -0.5 pF V Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz * Pulse Test : PW=20μs hFE Classification Classification R O Y hFE 50 ~ 100 70 ~ 140 90 ~ 180 © 2009 Fairchild Semiconductor Corporation FJAF4210 Rev. B0 www.fairchildsemi.com 1 FJAF4210 — PNP Epitaxial Silicon Transistor October 2009 FJAF4210 — PNP Epitaxial Silicon Transistor Typical Perpormance Characteristics IB = - 300mA -10 -9 1000 VCE = - 4 V -8 IB = - 200mA -7 IB = - 150mA -6 IB = - 100mA o -5 IB = - 50mA -4 -3 IB = - 20mA -2 Ta = 25 C o hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT IB = - 250mA IB = - 400mA Ta = 125 C 100 o Ta = - 25 C -1 -0 -0 -1 -2 -3 10 -0.1 -4 -1 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic Figure 2. DC current Gain -1 -2.5 -2.0 -1.5 -1.0 IC= - 10A -0.5 IC= - 5A -0.4 -0.8 -1.2 -1.6 IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE -3.0 -0.0 -0.0 -10 -0.1 o Ta = 125 C o Ta = 25 C o Ta = - 25 C -0.01 -0.01 -2.0 -0.1 -1 -10 IC [A], COLLECTOR CURRENT IB [A], BASE CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage -10 VCE = - 4 V IC [A], COLLECTOR CURRENT t=10ms IC(Pulse) -8 t=100ms Ic [A], COLLECTOR CURRENT 10 -6 o Ta = 25 C -4 -2 o Ta = 125 C o Ta = - 25 C IC(DC) 1 o -0 -0.0 TC=25 C Single Pulse -0.5 -1.0 -1.5 -2.0 0.1 0.1 VBE [V], Base-Emitter On VOLTAGE Figure 5. Base-Emitter On Voltage 10 100 Figure 6. Forward Bias Safe Operating Area © 2009 Fairchild Semiconductor Corporation FJAF4210 Rev. B0 1 VCE [V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 2 FJAF4210 — PNP Epitaxial Silicon Transistor Typical Perpormance Characteristics (Continued) PC[W], COLLECTOR POWER DISSIPATION 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2009 Fairchild Semiconductor Corporation FJAF4210 Rev. B0 www.fairchildsemi.com 3 FJAF4210 — PNP Epitaxial Silicon Transistor Physical Dimension TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 0.85 ±0.03 2.50 ±0.20 14.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJAF4210 Rev. B0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FJAF4210RTU FJAF4210YTU FJAF4210OTU