FJAF4310OTU

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FJAF4310 NPN Epitaxial Silicon Transistor Features • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 10 A IB Base Current (DC) 1.5 A PC Collector Dissipation (TC=25°C) 80 W Junction to Case 1.48 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C RθJC Electrical Characteristics Symbol TA=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ Emitter-Base Breakdown Voltage IE=5mA, IC=0 BVEBO IC=5mA, IE=0 Min. Typ. Max. Units 200 V 140 V 6 V ICBO Collector Cut-off Current VCB=200V, IE=0 10 μA IEBO Emitter Cut-off Current VEB=6V, IC=0 10 μA hFE * DC Current Gain VCE=4V, IC=3A VCE(sat) Cob fT 50 180 Collector-Emitter Saturation Voltage IC=5A, IB=0.5A Output Capacitance VCB=10V, f=1MHz 250 0.5 pF V Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz * Pulse Test : PW=20μs hFE Classification Classification R O Y hFE 50 ~ 100 70 ~ 140 90 ~ 180 © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev. B0 www.fairchildsemi.com 1 FJAF4310 — NPN Epitaxial Silicon Transistor October 2009 FJAF4310 — NPN Epitaxial Silicon Transistor Typical Perpormance Characteristics IB = 300mA 10 IB = 250mA 1000 IB = 200mA IB = 400mA VCE = 4 V 9 IB = 150mA 7 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 8 IB = 100mA 6 5 IB = 50mA 4 3 o Ta = 25 C o Ta = 125 C 100 o Ta = - 25 C 2 IB = 20mA 1 10 0.1 0 0 1 2 3 4 1 10 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterstic Figure 2. DC current Gain 3.0 1 VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC = 10 IB 2.5 2.0 1.5 1.0 0.5 IC= 10A IC= 5A 0.0 0.0 0.4 0.8 1.2 1.6 o Ta = 125 C 0.1 o Ta = 25 C o Ta = - 25 C 2.0 0.01 0.01 0.1 IB [A], BASE CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage 10 VCE = 4 V IC [A], COLLECTOR CURRENT 8 t=10ms IC(Pulse) t=100ms Ic [A], COLLECTOR CURRENT 10 6 o 4 2 Ta = 25 C o Ta = 125 C o Ta = - 25 C IC(DC) 1 o 0 0.0 0.5 1.0 TC=25 C Single Pulse 1.5 0.1 0.1 VBE [V], Base-Emitter On VOLTAGE Figure 5. Base-Emitter On Voltage 10 100 Figure 6. Forward Bias Safe Operating Area © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev. B0 1 VCE [V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 2 FJAF4310 — NPN Epitaxial Silicon Transistor Typical Perpormance Characteristics (Continued) PC[W], COLLECTOR POWER DISSIPATION 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev. B0 www.fairchildsemi.com 3 15.70 15.30 9.90 4.60 4.40 3.20 2.80 3.80 3.40 7.75 10.20 9.80 16.70 16.30 26.70 26.30 14.70 14.30 1.93 15.00 14.60 1 2 23.20 22.80 16.70 16.30 2.20 1.80 2.70 2.30 3 2.20 (3X) 1.80 4.20 3.80 3.50 3.10 0.95 (3X) 0.65 5.75 5.15 5.75 5.15 5.70 5.30 2.20 1.80 3.50 3.10 NOTES: A. THIS PACKAGE CONFORMS TO SC94 JEITA PACKAGING STANDARD. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. PIN 2 CONNECTS TO DAP. E. DRAWING FILE NAME: TO3PFA03REV2 1.10 0.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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