FJC1963RTF

FJC1963 NPN Epitaxial Silicon Transistor Features • • • • Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 1 9 6 3 P Y W W SOT-89 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 3 A TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to + 150 °C Value Units Power Dissipation (TA=25°C) 0.5 W Thermal Resistance, Junction to Ambient 250 °C/W Thermal Characteristics Symbol PD RθJA Parameter © 2009 Fairchild Semiconductor Corporation FJC1963 Rev. B2 www.fairchildsemi.com 1 FJC1963 — NPN Epitaxial Silicon Transistor June 2009 Symbol TA = 25°C unless otherwise noted Parameter Test conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 50μA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 30 V BVEBO Emitter-Base Breakdown Voltage IE = 50μA, IC = 0 6 V ICEO Collector Cut-off Current VCE = 40V, VB = 0 0.5 μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 0.5 μA hFE DC Current Gain VCE = 2V, IC = 0.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.15A 0.45 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.15A 1.2 V 120 560 hFE Classification Classification Q R S hFE 120 ~ 270 180 ~ 390 280 ~ 560 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1963 FJC1963 SOT-89 13” -- 4,000 © 2009 Fairchild Semiconductor Corporation FJC1963 Rev. B2 www.fairchildsemi.com 2 FJC1963 — NPN Epitaxial Silicon Transistor Electrical Characteritics Figure 1. Static Characteristic Figure 2. DC Current Gain 1400 1000 VCE = 2V IB = 6mA 1000 hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT IB = 7mA 1200 IB = 5mA 800 IB = 4mA 600 IB = 3mA 400 IB = 2mA o Ta = 125 C o Ta = 25 C 100 o Ta = - 40 C 200 IB = 1mA 0 0 2 4 6 8 10 12 10 10m 14 100m VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 4. Base-Emitter Saturation Voltage 10 IC = 10IB 1 o Ta = 125 C 100m o Ta = 25 C o Ta = - 40 C 10m 1m 10m 100m 1 IC = 10IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 1 o Ta = - 40 C o Ta = 25 C o Ta = 125 C 100m 10m 10 100m IC [A], COLLECTOR CURRENT 10 Figure 6. Power Derating 0.7 PC [W], COLLECTOR POWER DISSIPATION 1.8 VCE = 2V 1.6 IC [A], COLLECTOR CURRENT 1 IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage 1.4 1.2 1.0 0.8 0.6 0.4 o 125 C o o 25 C - 40 C 0.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 VBE [V], BASE-EMITTER VOLTAGE 25 50 75 100 125 150 175 o Ta [ C], AMIBIENT TEMPERATURE © 2009 Fairchild Semiconductor Corporation FJC1963 Rev. B2 10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 0.0 0.0 1 www.fairchildsemi.com 3 FJC1963 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJC1963 — NPN Epitaxial Silicon Transistor Physical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJC1963 Rev. B2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® ® FAST FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com